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Artigo de periodico
Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs (2010)
Caetano, Clóvis; Teles, L. K.; Marques, Marcelo; Ferreira, Luiz Guimarães
Source: Journal of Applied Physics. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
CAETANO, Clóvis et al. Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs. Journal of Applied Physics, v. 107, n. 12, p. 123904/1-123904/5, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3448025. Acesso em: 08 jul. 2024.
APA
Caetano, C., Teles, L. K., Marques, M., & Ferreira, L. G. (2010). Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs. Journal of Applied Physics, 107( 12), 123904/1-123904/5. doi:https://doi.org/10.1063/1.3448025
NLM
Caetano C, Teles LK, Marques M, Ferreira LG. Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs [Internet]. Journal of Applied Physics. 2010 ; 107( 12): 123904/1-123904/5.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1063/1.3448025
Vancouver
Caetano C, Teles LK, Marques M, Ferreira LG. Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs [Internet]. Journal of Applied Physics. 2010 ; 107( 12): 123904/1-123904/5.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1063/1.3448025
Artigo de periodico
Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs (2010)
Morais, R R O; Dias, I F L; Duarte, J L; Laureto, E; Lourenço, S A; Silva, Euzi Conceição Fernandes da; Quivy, A. A.
Source: Brazilian Journal of Physics. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
MORAIS, R R O et al. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs. Brazilian Journal of Physics, v. 40, n. 1, p. 15-21, 2010Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332010000100003. Acesso em: 08 jul. 2024.
APA
Morais, R. R. O., Dias, I. F. L., Duarte, J. L., Laureto, E., Lourenço, S. A., Silva, E. C. F. da, & Quivy, A. A. (2010). Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs. Brazilian Journal of Physics, 40( 1), 15-21. doi:10.1590/s0103-97332010000100003
NLM
Morais RRO, Dias IFL, Duarte JL, Laureto E, Lourenço SA, Silva ECF da, Quivy AA. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs [Internet]. Brazilian Journal of Physics. 2010 ; 40( 1): 15-21.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1590/s0103-97332010000100003
Vancouver
Morais RRO, Dias IFL, Duarte JL, Laureto E, Lourenço SA, Silva ECF da, Quivy AA. Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs [Internet]. Brazilian Journal of Physics. 2010 ; 40( 1): 15-21.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1590/s0103-97332010000100003
Artigo de periodico
Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study (2009)
Arantes, José Tadeu; Lima, M P; Fazzio, Adalberto; Xiang, H; Wei, Su-Huai; Dalpian, G. M.
Source: Journal of Physical Chemistry B. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, FILMES FINOS, SEMICONDUTORES
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ABNT
ARANTES, José Tadeu et al. Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study. Journal of Physical Chemistry B, v. 113, n. 16, p. 5376-5380, 2009Tradução . . Disponível em: http://pubs.acs.org/doi/pdfplus/10.1021/jp8101018. Acesso em: 08 jul. 2024.
APA
Arantes, J. T., Lima, M. P., Fazzio, A., Xiang, H., Wei, S. -H., & Dalpian, G. M. (2009). Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study. Journal of Physical Chemistry B, 113( 16), 5376-5380. Recuperado de http://pubs.acs.org/doi/pdfplus/10.1021/jp8101018
NLM
Arantes JT, Lima MP, Fazzio A, Xiang H, Wei S-H, Dalpian GM. Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study [Internet]. Journal of Physical Chemistry B. 2009 ; 113( 16): 5376-5380.[citado 2024 jul. 08 ] Available from: http://pubs.acs.org/doi/pdfplus/10.1021/jp8101018
Vancouver
Arantes JT, Lima MP, Fazzio A, Xiang H, Wei S-H, Dalpian GM. Effects of side-chain and electron exchange correlation on the band structure of perylene diimide liquid crystals: a density functional study [Internet]. Journal of Physical Chemistry B. 2009 ; 113( 16): 5376-5380.[citado 2024 jul. 08 ] Available from: http://pubs.acs.org/doi/pdfplus/10.1021/jp8101018
Artigo de periodico
Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method (2009)
Ribeiro Junior, Mauro; Fonseca, Leonardo R C; Ferreira, Luiz Guimarães
Source: Physical Review B. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
RIBEIRO JUNIOR, Mauro e FONSECA, Leonardo R C e FERREIRA, Luiz Guimarães. Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method. Physical Review B, v. 79, n. 24, p. 241312-1/241312-4, 2009Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000024241312000001&idtype=cvips&prog=normal. Acesso em: 08 jul. 2024.
APA
Ribeiro Junior, M., Fonseca, L. R. C., & Ferreira, L. G. (2009). Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method. Physical Review B, 79( 24), 241312-1/241312-4. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000024241312000001&idtype=cvips&prog=normal
NLM
Ribeiro Junior M, Fonseca LRC, Ferreira LG. Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method [Internet]. Physical Review B. 2009 ; 79( 24): 241312-1/241312-4.[citado 2024 jul. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000024241312000001&idtype=cvips&prog=normal
Vancouver
Ribeiro Junior M, Fonseca LRC, Ferreira LG. Accurate prediction of the `Si/SiO IND.2´ interface band offset using the self-consistent ab initio DFT/LDA-1/2 method [Internet]. Physical Review B. 2009 ; 79( 24): 241312-1/241312-4.[citado 2024 jul. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000079000024241312000001&idtype=cvips&prog=normal
Trabalho de evento-anais periodico
Valley splitting and g-factor in A1As quantum wells (2009)
Duarte, Cesário Antonio; Gusev, Guennadii Michailovich; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
DUARTE, Cesário Antonio et al. Valley splitting and g-factor in A1As quantum wells. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf. Acesso em: 08 jul. 2024. , 2009
APA
Duarte, C. A., Gusev, G. M., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Valley splitting and g-factor in A1As quantum wells. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
NLM
Duarte CA, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Valley splitting and g-factor in A1As quantum wells [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2948-2954.[citado 2024 jul. 08 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
Vancouver
Duarte CA, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Valley splitting and g-factor in A1As quantum wells [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2948-2954.[citado 2024 jul. 08 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
Trabalho de evento-anais periodico
Quantum hall ferromagneti in a double well with vanishing g-factor (2009)
Gomez Armas, Luis Enrique ; Gusev, Guennadii Michailovich; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
GOMEZ ARMAS, Luis Enrique et al. Quantum hall ferromagneti in a double well with vanishing g-factor. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf. Acesso em: 08 jul. 2024. , 2009
APA
Gomez Armas, L. E., Gusev, G. M., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Quantum hall ferromagneti in a double well with vanishing g-factor. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
NLM
Gomez Armas LE, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Quantum hall ferromagneti in a double well with vanishing g-factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2933-2937.[citado 2024 jul. 08 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
Vancouver
Gomez Armas LE, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Quantum hall ferromagneti in a double well with vanishing g-factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2933-2937.[citado 2024 jul. 08 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
Trabalho de evento-anais periodico
Magnetoresistance oscillations in double quantum wells under microwave irradiation (2009)
Wiedmann, S; Gusev, Guennadii Michailovich; Raichev, O E; Lamas, T. E.; Bakarov, A K; Portal, J C
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
WIEDMANN, S et al. Magnetoresistance oscillations in double quantum wells under microwave irradiation. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf. Acesso em: 08 jul. 2024. , 2009
APA
Wiedmann, S., Gusev, G. M., Raichev, O. E., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Magnetoresistance oscillations in double quantum wells under microwave irradiation. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
NLM
Wiedmann S, Gusev GM, Raichev OE, Lamas TE, Bakarov AK, Portal JC. Magnetoresistance oscillations in double quantum wells under microwave irradiation [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2943-2947.[citado 2024 jul. 08 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
Vancouver
Wiedmann S, Gusev GM, Raichev OE, Lamas TE, Bakarov AK, Portal JC. Magnetoresistance oscillations in double quantum wells under microwave irradiation [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2943-2947.[citado 2024 jul. 08 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
Artigo de periodico
Organic molecule assembled between carbon nanotubes: a highly efficient switch device (2009)
Martins, Thiago Barros; Fazzio, Adalberto; Silva, Antonio Jose Roque da
Source: Physical Review B. Unidade: IF
Subjects: MATERIAIS NANOESTRUTURADOS, NANOPARTÍCULAS, SEMICONDUTORES
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ABNT
MARTINS, Thiago Barros e FAZZIO, Adalberto e SILVA, Antonio Jose Roque da. Organic molecule assembled between carbon nanotubes: a highly efficient switch device. Physical Review B, v. 79, n. 11, p. 115413-1/115413-4, 2009Tradução . . Disponível em: https://doi.org/10.1103/physrevb.79.115413. Acesso em: 08 jul. 2024.
APA
Martins, T. B., Fazzio, A., & Silva, A. J. R. da. (2009). Organic molecule assembled between carbon nanotubes: a highly efficient switch device. Physical Review B, 79( 11), 115413-1/115413-4. doi:10.1103/physrevb.79.115413
NLM
Martins TB, Fazzio A, Silva AJR da. Organic molecule assembled between carbon nanotubes: a highly efficient switch device [Internet]. Physical Review B. 2009 ; 79( 11): 115413-1/115413-4.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1103/physrevb.79.115413
Vancouver
Martins TB, Fazzio A, Silva AJR da. Organic molecule assembled between carbon nanotubes: a highly efficient switch device [Internet]. Physical Review B. 2009 ; 79( 11): 115413-1/115413-4.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1103/physrevb.79.115413
Trabalho de evento-anais periodico
Preface to Special Topic: Plenary and Invited Papers from the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2008 (2009)
Caldas, Marília Junqueira; Studart, Nelson
Source: Journal of Applied Physics,. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
CALDAS, Marília Junqueira e STUDART, Nelson. Preface to Special Topic: Plenary and Invited Papers from the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2008. Journal of Applied Physics,. Melville: AIP. Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000105000012122301000001&idtype=cvips&prog=normal. Acesso em: 08 jul. 2024. , 2009
APA
Caldas, M. J., & Studart, N. (2009). Preface to Special Topic: Plenary and Invited Papers from the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2008. Journal of Applied Physics,. Melville: AIP. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000105000012122301000001&idtype=cvips&prog=normal
NLM
Caldas MJ, Studart N. Preface to Special Topic: Plenary and Invited Papers from the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2008 [Internet]. Journal of Applied Physics,. 2009 ; 105( 12): 122301/1-122301/2.[citado 2024 jul. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000105000012122301000001&idtype=cvips&prog=normal
Vancouver
Caldas MJ, Studart N. Preface to Special Topic: Plenary and Invited Papers from the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2008 [Internet]. Journal of Applied Physics,. 2009 ; 105( 12): 122301/1-122301/2.[citado 2024 jul. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000105000012122301000001&idtype=cvips&prog=normal
Artigo de periodico
Electronic properties and hyperfine fields of nickel-related complexes in diamond (2009)
Larico, R; Justo Filho, João Francisco ; Machado, Wanda Valle Marcondes; Assali, L. V. C.
Source: Physical Review B. Unidades: EP, IF
Assunto: SEMICONDUTORES
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ABNT
LARICO, R et al. Electronic properties and hyperfine fields of nickel-related complexes in diamond. Physical Review B, v. 79, n. 11, p. 115202-1/115202-11, 2009Tradução . . Disponível em: https://doi.org/10.1103/physrevb.79.115202. Acesso em: 08 jul. 2024.
APA
Larico, R., Justo Filho, J. F., Machado, W. V. M., & Assali, L. V. C. (2009). Electronic properties and hyperfine fields of nickel-related complexes in diamond. Physical Review B, 79( 11), 115202-1/115202-11. doi:10.1103/physrevb.79.115202
NLM
Larico R, Justo Filho JF, Machado WVM, Assali LVC. Electronic properties and hyperfine fields of nickel-related complexes in diamond [Internet]. Physical Review B. 2009 ; 79( 11): 115202-1/115202-11.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1103/physrevb.79.115202
Vancouver
Larico R, Justo Filho JF, Machado WVM, Assali LVC. Electronic properties and hyperfine fields of nickel-related complexes in diamond [Internet]. Physical Review B. 2009 ; 79( 11): 115202-1/115202-11.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1103/physrevb.79.115202
Trabalho de evento-anais periodico
Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers (2009)
Diaz, B; Abramof, E; Rappl, P H O; Granado, E; Chitta, Valmir Antonio; Henriques, André Bohomoletz; Oliveira Jr., N. F.
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X
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ABNT
DIAZ, B et al. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific. . Acesso em: 08 jul. 2024. , 2009
APA
Diaz, B., Abramof, E., Rappl, P. H. O., Granado, E., Chitta, V. A., Henriques, A. B., & Oliveira Jr., N. F. (2009). Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific.
NLM
Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 jul. 08 ]
Vancouver
Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 jul. 08 ]
Trabalho de evento-anais periodico
Trends on 3d transition metal impurities in diamond (2009)
Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco
Source: Physica B: Condensed Matter. Conference titles: International Conference on Defects in Semiconductors. Unidades: IF, EP
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
ASSALI, L. V. C. e MACHADO, Wanda Valle Marcondes e JUSTO FILHO, João Francisco. Trends on 3d transition metal impurities in diamond. Physica B: Condensed Matter. Amsterdam: Elsevier Science. Disponível em: https://doi.org/10.1016/j.physb.2009.08.109. Acesso em: 08 jul. 2024. , 2009
APA
Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2009). Trends on 3d transition metal impurities in diamond. Physica B: Condensed Matter. Amsterdam: Elsevier Science. doi:10.1016/j.physb.2009.08.109
NLM
Assali LVC, Machado WVM, Justo Filho JF. Trends on 3d transition metal impurities in diamond [Internet]. Physica B: Condensed Matter. 2009 ; 404( 23-24): 4515-4517.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.physb.2009.08.109
Vancouver
Assali LVC, Machado WVM, Justo Filho JF. Trends on 3d transition metal impurities in diamond [Internet]. Physica B: Condensed Matter. 2009 ; 404( 23-24): 4515-4517.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1016/j.physb.2009.08.109
Artigo de periodico
Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction (2009)
Freitas, Raul de Oliveira; Quivy, A. A.; Morelhão, Sérgio Luiz
Source: Journal of Applied Physics,. Unidade: IF
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, DIFRAÇÃO POR RAIOS X
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ABNT
FREITAS, Raul de Oliveira e QUIVY, A. A. e MORELHÃO, Sérgio Luiz. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction. Journal of Applied Physics, v. 105, n. 3, p. 036104-1/-03104/3, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3074376. Acesso em: 08 jul. 2024.
APA
Freitas, R. de O., Quivy, A. A., & Morelhão, S. L. (2009). Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction. Journal of Applied Physics,, 105( 3), 036104-1/-03104/3. doi:10.1063/1.3074376
NLM
Freitas R de O, Quivy AA, Morelhão SL. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [Internet]. Journal of Applied Physics,. 2009 ; 105( 3): 036104-1/-03104/3.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1063/1.3074376
Vancouver
Freitas R de O, Quivy AA, Morelhão SL. Growth and capping of InAs/GaAs quantum dots investigated by x-ray Bragg-surface diffraction [Internet]. Journal of Applied Physics,. 2009 ; 105( 3): 036104-1/-03104/3.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1063/1.3074376
Trabalho de evento-anais periodico
A model for the stabilization of atomic hydrogen centers in borate glasses (2009)
Pontuschka, W. M.; Isotani, Sadao
Source: Physica B: Condensed Matter. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, RESSONÂNCIA PARAMAGNÉTICA DE SPIN
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ABNT
PONTUSCHKA, W. M. e ISOTANI, Sadao. A model for the stabilization of atomic hydrogen centers in borate glasses. Physica B: Condensed Matter. Amsterdam: Elsevier Science. Disponível em: http://www.sciencedirect.com/science/journal/09214526. Acesso em: 08 jul. 2024. , 2009
APA
Pontuschka, W. M., & Isotani, S. (2009). A model for the stabilization of atomic hydrogen centers in borate glasses. Physica B: Condensed Matter. Amsterdam: Elsevier Science. Recuperado de http://www.sciencedirect.com/science/journal/09214526
NLM
Pontuschka WM, Isotani S. A model for the stabilization of atomic hydrogen centers in borate glasses [Internet]. Physica B: Condensed Matter. 2009 ; 404( 21): 4312-4317.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science/journal/09214526
Vancouver
Pontuschka WM, Isotani S. A model for the stabilization of atomic hydrogen centers in borate glasses [Internet]. Physica B: Condensed Matter. 2009 ; 404( 21): 4312-4317.[citado 2024 jul. 08 ] Available from: http://www.sciencedirect.com/science/journal/09214526
Trabalho de evento-anais periodico
Magnetic field induced near-band-gap optical properties in EuTe layers (2009)
Hernandez, F G G; Henriques, André Bohomoletz; Rappl, P H O; Abramof, E
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO
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ABNT
HERNANDEZ, F G G et al. Magnetic field induced near-band-gap optical properties in EuTe layers. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf. Acesso em: 08 jul. 2024. , 2009
APA
Hernandez, F. G. G., Henriques, A. B., Rappl, P. H. O., & Abramof, E. (2009). Magnetic field induced near-band-gap optical properties in EuTe layers. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf
NLM
Hernandez FGG, Henriques AB, Rappl PHO, Abramof E. Magnetic field induced near-band-gap optical properties in EuTe layers [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2999-3003.[citado 2024 jul. 08 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf
Vancouver
Hernandez FGG, Henriques AB, Rappl PHO, Abramof E. Magnetic field induced near-band-gap optical properties in EuTe layers [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2999-3003.[citado 2024 jul. 08 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf
Artigo de periodico
Anomalous lattice parameter of magnetic semiconductor alloys (2009)
Caetano, Clovis; Marques, Marcelo; Ferreira, Luiz Guimarães; Teles, L. K.
Source: Applied Physics Letters. Unidade: IF
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAETANO, Clovis et al. Anomalous lattice parameter of magnetic semiconductor alloys. Applied Physics Letters, v. 94, n. 24, p. 241914/1-241914/3. 2009, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3154560. Acesso em: 08 jul. 2024.
APA
Caetano, C., Marques, M., Ferreira, L. G., & Teles, L. K. (2009). Anomalous lattice parameter of magnetic semiconductor alloys. Applied Physics Letters, 94( 24), 241914/1-241914/3. 2009. doi:10.1063/1.3154560
NLM
Caetano C, Marques M, Ferreira LG, Teles LK. Anomalous lattice parameter of magnetic semiconductor alloys [Internet]. Applied Physics Letters. 2009 ; 94( 24): 241914/1-241914/3. 2009.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1063/1.3154560
Vancouver
Caetano C, Marques M, Ferreira LG, Teles LK. Anomalous lattice parameter of magnetic semiconductor alloys [Internet]. Applied Physics Letters. 2009 ; 94( 24): 241914/1-241914/3. 2009.[citado 2024 jul. 08 ] Available from: https://doi.org/10.1063/1.3154560
Artigo de periodico
Spin-induced optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe (2009)
Kaminski, B; Lafrentz, M; Pisarev, R V; Yakolev, D R; Pavlov, V V; Lukoshkin, V A; Henriques, André Bohomoletz; Springholz, G; Bauer, G; Abramof, E; Rappl, P H O; Bayer, M
Source: Physical Review Letters. Unidade: IF
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
KAMINSKI, B et al. Spin-induced optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe. Physical Review Letters, v. 103, n. 5, p. 057203/0-057203/4, 2009Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000103000005057203000001&idtype=cvips&prog=normal. Acesso em: 08 jul. 2024.
APA
Kaminski, B., Lafrentz, M., Pisarev, R. V., Yakolev, D. R., Pavlov, V. V., Lukoshkin, V. A., et al. (2009). Spin-induced optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe. Physical Review Letters, 103( 5), 057203/0-057203/4. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000103000005057203000001&idtype=cvips&prog=normal
NLM
Kaminski B, Lafrentz M, Pisarev RV, Yakolev DR, Pavlov VV, Lukoshkin VA, Henriques AB, Springholz G, Bauer G, Abramof E, Rappl PHO, Bayer M. Spin-induced optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe [Internet]. Physical Review Letters. 2009 ; 103( 5): 057203/0-057203/4.[citado 2024 jul. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000103000005057203000001&idtype=cvips&prog=normal
Vancouver
Kaminski B, Lafrentz M, Pisarev RV, Yakolev DR, Pavlov VV, Lukoshkin VA, Henriques AB, Springholz G, Bauer G, Abramof E, Rappl PHO, Bayer M. Spin-induced optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe [Internet]. Physical Review Letters. 2009 ; 103( 5): 057203/0-057203/4.[citado 2024 jul. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000103000005057203000001&idtype=cvips&prog=normal
Trabalho de evento-anais periodico
Magneto-optical absorption and photomagnetism in Europium chalcogenides (2009)
Henriques, André Bohomoletz; Abramof, E
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HENRIQUES, André Bohomoletz e ABRAMOF, E. Magneto-optical absorption and photomagnetism in Europium chalcogenides. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf. Acesso em: 08 jul. 2024. , 2009
APA
Henriques, A. B., & Abramof, E. (2009). Magneto-optical absorption and photomagnetism in Europium chalcogenides. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf
NLM
Henriques AB, Abramof E. Magneto-optical absorption and photomagnetism in Europium chalcogenides [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2769-2776.[citado 2024 jul. 08 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf
Vancouver
Henriques AB, Abramof E. Magneto-optical absorption and photomagnetism in Europium chalcogenides [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2769-2776.[citado 2024 jul. 08 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf
Trabalho de evento-anais periodico
Transport in a bilayer system at high Landau filling factor (2009)
Gusev, G M
Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF
Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M. Transport in a bilayer system at high Landau filling factor. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf. Acesso em: 08 jul. 2024. , 2009
APA
Gusev, G. M. (2009). Transport in a bilayer system at high Landau filling factor. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf
NLM
Gusev GM. Transport in a bilayer system at high Landau filling factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2603-2606.[citado 2024 jul. 08 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf
Vancouver
Gusev GM. Transport in a bilayer system at high Landau filling factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2603-2606.[citado 2024 jul. 08 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf
Artigo de periodico
Classical and quantum magnetoresistance in a two-subband electron system (2009)
Mammani, Niko Churata; Gusev, Guennadii Michailovich; Silva, Euzi Conceicao Fernandes da; Raichev, O E; Quivy, A. A.; Bakarov, A K
Source: Physical Review B. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MAMMANI, Niko Churata et al. Classical and quantum magnetoresistance in a two-subband electron system. Physical Review B, v. 80, n. 7, p. 085304-1/085304-5, 2009Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal. Acesso em: 08 jul. 2024.
APA
Mammani, N. C., Gusev, G. M., Silva, E. C. F. da, Raichev, O. E., Quivy, A. A., & Bakarov, A. K. (2009). Classical and quantum magnetoresistance in a two-subband electron system. Physical Review B, 80( 7), 085304-1/085304-5. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal
NLM
Mammani NC, Gusev GM, Silva ECF da, Raichev OE, Quivy AA, Bakarov AK. Classical and quantum magnetoresistance in a two-subband electron system [Internet]. Physical Review B. 2009 ; 80( 7): 085304-1/085304-5.[citado 2024 jul. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal
Vancouver
Mammani NC, Gusev GM, Silva ECF da, Raichev OE, Quivy AA, Bakarov AK. Classical and quantum magnetoresistance in a two-subband electron system [Internet]. Physical Review B. 2009 ; 80( 7): 085304-1/085304-5.[citado 2024 jul. 08 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000080000008085304000001&idtype=cvips&prog=normal

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