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  • Source: Lhotska L., Sukupova L., Lacković I., Ibbott G. (eds) World Congress on Medical Physics and Biomedical Engineering. IFMBE Proceedings. Conference titles: World Congress on Medical Physics and Biomedical Engineering,. Unidade: IF

    Subjects: FÍSICA MÉDICA, ESPECTROMETRIA

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      TERINI, Ricardo Andrade et al. CT Spectrometry with a Portable Compton Spectrometer with Stationary and Moving Tube. 2019, Anais.. Singapore: Springer, 2019. Disponível em: https://doi.org/10.1007/978-981-10-9023-3_93. Acesso em: 02 jul. 2024.
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      Terini, R. A., Morice, V., Nersissian, D. Y., & Yoshimura, E. M. (2019). CT Spectrometry with a Portable Compton Spectrometer with Stationary and Moving Tube. In Lhotska L., Sukupova L., Lacković I., Ibbott G. (eds) World Congress on Medical Physics and Biomedical Engineering. IFMBE Proceedings. Singapore: Springer. doi:10.1007/978-981-10-9023-3_93
    • NLM

      Terini RA, Morice V, Nersissian DY, Yoshimura EM. CT Spectrometry with a Portable Compton Spectrometer with Stationary and Moving Tube [Internet]. Lhotska L., Sukupova L., Lacković I., Ibbott G. (eds) World Congress on Medical Physics and Biomedical Engineering. IFMBE Proceedings. 2019 ;[citado 2024 jul. 02 ] Available from: https://doi.org/10.1007/978-981-10-9023-3_93
    • Vancouver

      Terini RA, Morice V, Nersissian DY, Yoshimura EM. CT Spectrometry with a Portable Compton Spectrometer with Stationary and Moving Tube [Internet]. Lhotska L., Sukupova L., Lacković I., Ibbott G. (eds) World Congress on Medical Physics and Biomedical Engineering. IFMBE Proceedings. 2019 ;[citado 2024 jul. 02 ] Available from: https://doi.org/10.1007/978-981-10-9023-3_93
  • Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF

    Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS

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      DUARTE, Cesário Antonio et al. Valley splitting and g-factor in A1As quantum wells. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf. Acesso em: 02 jul. 2024. , 2009
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      Duarte, C. A., Gusev, G. M., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Valley splitting and g-factor in A1As quantum wells. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
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      Duarte CA, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Valley splitting and g-factor in A1As quantum wells [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2948-2954.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
    • Vancouver

      Duarte CA, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Valley splitting and g-factor in A1As quantum wells [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2948-2954.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062608.pdf
  • Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF

    Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS

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      GOMEZ ARMAS, Luis Enrique et al. Quantum hall ferromagneti in a double well with vanishing g-factor. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf. Acesso em: 02 jul. 2024. , 2009
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      Gomez Armas, L. E., Gusev, G. M., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Quantum hall ferromagneti in a double well with vanishing g-factor. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
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      Gomez Armas LE, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Quantum hall ferromagneti in a double well with vanishing g-factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2933-2937.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
    • Vancouver

      Gomez Armas LE, Gusev GM, Lamas TE, Bakarov AK, Portal JC. Quantum hall ferromagneti in a double well with vanishing g-factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2933-2937.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062578.pdf
  • Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF

    Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS

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      WIEDMANN, S et al. Magnetoresistance oscillations in double quantum wells under microwave irradiation. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf. Acesso em: 02 jul. 2024. , 2009
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      Wiedmann, S., Gusev, G. M., Raichev, O. E., Lamas, T. E., Bakarov, A. K., & Portal, J. C. (2009). Magnetoresistance oscillations in double quantum wells under microwave irradiation. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
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      Wiedmann S, Gusev GM, Raichev OE, Lamas TE, Bakarov AK, Portal JC. Magnetoresistance oscillations in double quantum wells under microwave irradiation [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2943-2947.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
    • Vancouver

      Wiedmann S, Gusev GM, Raichev OE, Lamas TE, Bakarov AK, Portal JC. Magnetoresistance oscillations in double quantum wells under microwave irradiation [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2943-2947.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062591.pdf
  • Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF

    Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X

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      DIAZ, B et al. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific. . Acesso em: 02 jul. 2024. , 2009
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      Diaz, B., Abramof, E., Rappl, P. H. O., Granado, E., Chitta, V. A., Henriques, A. B., & Oliveira Jr., N. F. (2009). Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. Singapore: World Scientific.
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      Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 jul. 02 ]
    • Vancouver

      Diaz B, Abramof E, Rappl PHO, Granado E, Chitta VA, Henriques AB, Oliveira Jr. NF. Magnetic resonant x-ray diffraction applied to the study of EuTe films and multilayers. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2979-2983.[citado 2024 jul. 02 ]
  • Source: International Journal of Modern Physics C. Unidade: IF

    Subjects: MECÂNICA ESTATÍSTICA, REDES COMPLEXAS, DINÂMICA

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      VANNUCCI, Fabio Stucchi e PRADO, Carmen Pimentel Cintra do. Sznajd model and proportional elections: the role of the topology of the network. International Journal of Modern Physics C, v. 20, n. 6, p. 979-990, 2009Tradução . . Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpc/20/preserved-docs/2006/S0129183109014102.pdf. Acesso em: 02 jul. 2024.
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      Vannucci, F. S., & Prado, C. P. C. do. (2009). Sznajd model and proportional elections: the role of the topology of the network. International Journal of Modern Physics C, 20( 6), 979-990. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpc/20/preserved-docs/2006/S0129183109014102.pdf
    • NLM

      Vannucci FS, Prado CPC do. Sznajd model and proportional elections: the role of the topology of the network [Internet]. International Journal of Modern Physics C. 2009 ; 20( 6): 979-990.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpc/20/preserved-docs/2006/S0129183109014102.pdf
    • Vancouver

      Vannucci FS, Prado CPC do. Sznajd model and proportional elections: the role of the topology of the network [Internet]. International Journal of Modern Physics C. 2009 ; 20( 6): 979-990.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpc/20/preserved-docs/2006/S0129183109014102.pdf
  • Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF

    Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO

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      HERNANDEZ, F G G et al. Magnetic field induced near-band-gap optical properties in EuTe layers. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf. Acesso em: 02 jul. 2024. , 2009
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      Hernandez, F. G. G., Henriques, A. B., Rappl, P. H. O., & Abramof, E. (2009). Magnetic field induced near-band-gap optical properties in EuTe layers. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf
    • NLM

      Hernandez FGG, Henriques AB, Rappl PHO, Abramof E. Magnetic field induced near-band-gap optical properties in EuTe layers [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2999-3003.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf
    • Vancouver

      Hernandez FGG, Henriques AB, Rappl PHO, Abramof E. Magnetic field induced near-band-gap optical properties in EuTe layers [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2999-3003.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062700.pdf
  • Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF

    Assunto: SEMICONDUTORES

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      HENRIQUES, André Bohomoletz e ABRAMOF, E. Magneto-optical absorption and photomagnetism in Europium chalcogenides. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf. Acesso em: 02 jul. 2024. , 2009
    • APA

      Henriques, A. B., & Abramof, E. (2009). Magneto-optical absorption and photomagnetism in Europium chalcogenides. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf
    • NLM

      Henriques AB, Abramof E. Magneto-optical absorption and photomagnetism in Europium chalcogenides [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2769-2776.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf
    • Vancouver

      Henriques AB, Abramof E. Magneto-optical absorption and photomagnetism in Europium chalcogenides [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2769-2776.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062347.pdf
  • Source: International Journal of Modern Physics B. Conference titles: International Conference on High Magnetic Fields in Semiconductor Physics and Nanotechnology. Unidade: IF

    Subjects: SEMICONDUTORES, CAMPO MAGNÉTICO

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      GUSEV, G M. Transport in a bilayer system at high Landau filling factor. International Journal of Modern Physics B. Singapore: World Scientific. Disponível em: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf. Acesso em: 02 jul. 2024. , 2009
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      Gusev, G. M. (2009). Transport in a bilayer system at high Landau filling factor. International Journal of Modern Physics B. Singapore: World Scientific. Recuperado de http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf
    • NLM

      Gusev GM. Transport in a bilayer system at high Landau filling factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2603-2606.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf
    • Vancouver

      Gusev GM. Transport in a bilayer system at high Landau filling factor [Internet]. International Journal of Modern Physics B. 2009 ; 23( 12-13): 2603-2606.[citado 2024 jul. 02 ] Available from: http://www.worldscinet.com.w10077.dotlib.com.br/ijmpb/23/preserved-docs/2312n13/S0217979209062050.pdf
  • Source: International Journal of Modern Physics B. Unidade: IF

    Assunto: FÍSICA

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      LIANG, G. et al. Cu K-edge studies of charge carries in Th-doped cuprate system 'R IND.X''Th IND.X' Cu'O IND.4-X'(R=Nd, Sm and Gd). International Journal of Modern Physics B, v. 13, n. 29, p. 3750-3754, 1999Tradução . . Acesso em: 02 jul. 2024.
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      Liang, G., Yi, Y., Jardim, R. F., & Wang, L. V. (1999). Cu K-edge studies of charge carries in Th-doped cuprate system 'R IND.X''Th IND.X' Cu'O IND.4-X'(R=Nd, Sm and Gd). International Journal of Modern Physics B, 13( 29), 3750-3754.
    • NLM

      Liang G, Yi Y, Jardim RF, Wang LV. Cu K-edge studies of charge carries in Th-doped cuprate system 'R IND.X''Th IND.X' Cu'O IND.4-X'(R=Nd, Sm and Gd). International Journal of Modern Physics B. 1999 ; 13( 29): 3750-3754.[citado 2024 jul. 02 ]
    • Vancouver

      Liang G, Yi Y, Jardim RF, Wang LV. Cu K-edge studies of charge carries in Th-doped cuprate system 'R IND.X''Th IND.X' Cu'O IND.4-X'(R=Nd, Sm and Gd). International Journal of Modern Physics B. 1999 ; 13( 29): 3750-3754.[citado 2024 jul. 02 ]
  • Source: International Journal of Modern Physics B. Unidade: IF

    Subjects: FÍSICA, INTERFACE

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      BAIERLE, Rogerio Jose e CALDAS, Marilia Junqueira. Quantum-chemistry study of semiconductor systems: the initial oxidation of the (111)Si-H surface. International Journal of Modern Physics B, v. 13, n. 21-22, p. 2733-2757, 1999Tradução . . Acesso em: 02 jul. 2024.
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      Baierle, R. J., & Caldas, M. J. (1999). Quantum-chemistry study of semiconductor systems: the initial oxidation of the (111)Si-H surface. International Journal of Modern Physics B, 13( 21-22), 2733-2757.
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      Baierle RJ, Caldas MJ. Quantum-chemistry study of semiconductor systems: the initial oxidation of the (111)Si-H surface. International Journal of Modern Physics B. 1999 ; 13( 21-22): 2733-2757.[citado 2024 jul. 02 ]
    • Vancouver

      Baierle RJ, Caldas MJ. Quantum-chemistry study of semiconductor systems: the initial oxidation of the (111)Si-H surface. International Journal of Modern Physics B. 1999 ; 13( 21-22): 2733-2757.[citado 2024 jul. 02 ]
  • Source: International Journal of Modern Physics B. Unidade: IF

    Assunto: FÍSICA

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      JUSTO FILHO, João Francisco e ASSALI, L. V. C. Electronic properties of copper-3d transition-metal pairs in silicon. International Journal of Modern Physics B, v. 13, n. 18, 1999Tradução . . Disponível em: https://doi.org/10.1142/S0217979299002472. Acesso em: 02 jul. 2024.
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      Justo Filho, J. F., & Assali, L. V. C. (1999). Electronic properties of copper-3d transition-metal pairs in silicon. International Journal of Modern Physics B, 13( 18). doi:10.1142/S0217979299002472
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      Justo Filho JF, Assali LVC. Electronic properties of copper-3d transition-metal pairs in silicon [Internet]. International Journal of Modern Physics B. 1999 ; 13( 18):[citado 2024 jul. 02 ] Available from: https://doi.org/10.1142/S0217979299002472
    • Vancouver

      Justo Filho JF, Assali LVC. Electronic properties of copper-3d transition-metal pairs in silicon [Internet]. International Journal of Modern Physics B. 1999 ; 13( 18):[citado 2024 jul. 02 ] Available from: https://doi.org/10.1142/S0217979299002472
  • Source: Internacional Journal of Modern Physics B. Unidade: IF

    Assunto: FÍSICA

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      PALACIO, F et al. Impurity-induced magnetic anomalies in the slightly diluted low anisotropy ''A IND.2''Fe IND.1-X''In IND.X''Cl IND.5'. 'H IND.2 O'', (A=K, Rb) antiferromagnets: an overview. Internacional Journal of Modern Physics B, v. 12, n. 18, p. 1781-1793, 1998Tradução . . Acesso em: 02 jul. 2024.
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      Palacio, F., Campo, J., Moron, M. C., Paduan-Filho, A., & Becerra, C. C. (1998). Impurity-induced magnetic anomalies in the slightly diluted low anisotropy ''A IND.2''Fe IND.1-X''In IND.X''Cl IND.5'. 'H IND.2 O'', (A=K, Rb) antiferromagnets: an overview. Internacional Journal of Modern Physics B, 12( 18), 1781-1793.
    • NLM

      Palacio F, Campo J, Moron MC, Paduan-Filho A, Becerra CC. Impurity-induced magnetic anomalies in the slightly diluted low anisotropy ''A IND.2''Fe IND.1-X''In IND.X''Cl IND.5'. 'H IND.2 O'', (A=K, Rb) antiferromagnets: an overview. Internacional Journal of Modern Physics B. 1998 ; 12( 18): 1781-1793.[citado 2024 jul. 02 ]
    • Vancouver

      Palacio F, Campo J, Moron MC, Paduan-Filho A, Becerra CC. Impurity-induced magnetic anomalies in the slightly diluted low anisotropy ''A IND.2''Fe IND.1-X''In IND.X''Cl IND.5'. 'H IND.2 O'', (A=K, Rb) antiferromagnets: an overview. Internacional Journal of Modern Physics B. 1998 ; 12( 18): 1781-1793.[citado 2024 jul. 02 ]
  • Source: International Journal of Modern Physics B. Unidade: IF

    Assunto: FÍSICA

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      TAKAHASHI, E K e LINO, A T e SCÓLFARO, Luisa Maria Ribeiro. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B, v. 11, n. 9, p. 1195-1207, 1997Tradução . . Acesso em: 02 jul. 2024.
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      Takahashi, E. K., Lino, A. T., & Scólfaro, L. M. R. (1997). Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B, 11( 9), 1195-1207.
    • NLM

      Takahashi EK, Lino AT, Scólfaro LMR. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B. 1997 ; 11( 9): 1195-1207.[citado 2024 jul. 02 ]
    • Vancouver

      Takahashi EK, Lino AT, Scólfaro LMR. Electron subband levels of n-Type'Gama'-Doped quantum wells under in-plane magnetic fields. International Journal of Modern Physics B. 1997 ; 11( 9): 1195-1207.[citado 2024 jul. 02 ]
  • Source: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Unidade: IF

    Assunto: SEMICONDUTORES

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      HENRIQUES, André Bohomoletz et al. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Tradução . Singapore: World Scientific, 1997. . . Acesso em: 02 jul. 2024.
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      Henriques, A. B., Gonçalves, L. C. D., Bindilatti, V., Oliveira Júnior, H. F. de, Souza, P. L., & Yavich, B. (1997). Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific.
    • NLM

      Henriques AB, Gonçalves LCD, Bindilatti V, Oliveira Júnior HF de, Souza PL, Yavich B. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific; 1997. [citado 2024 jul. 02 ]
    • Vancouver

      Henriques AB, Gonçalves LCD, Bindilatti V, Oliveira Júnior HF de, Souza PL, Yavich B. Photoluminescence of periodically 'Delta-Doped' InP in high magnetic fields. In: International Conference High Magnetic Fields in the Physics of Semiconductors II, 12. Würzburg, 1996. Singapore: World Scientific; 1997. [citado 2024 jul. 02 ]
  • Unidades: IF, EP

    Subjects: MATÉRIA CONDENSADA, MATERIAIS MAGNÉTICOS

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      Proceedings of the international workshop rare-earth magnets and their applications, 14. . Singapore: World Scientific. . Acesso em: 02 jul. 2024. , 1996
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      Proceedings of the international workshop rare-earth magnets and their applications, 14. (1996). Proceedings of the international workshop rare-earth magnets and their applications, 14. Singapore: World Scientific.
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      Proceedings of the international workshop rare-earth magnets and their applications, 14. 1996 ;[citado 2024 jul. 02 ]
    • Vancouver

      Proceedings of the international workshop rare-earth magnets and their applications, 14. 1996 ;[citado 2024 jul. 02 ]
  • Source: Proceedings. Conference titles: International Symposium Magnetic Anisotropy and Coercivity in Rare-Earth Transition Metal Alloys. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, MATERIAIS MAGNÉTICOS

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      JONEN, S e RECHENBERG, H R. Magnetic properties of 'ND IND.6''FE IND.14-X''AL IND.X' compounds ' (3
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      Jonen, S., & Rechenberg, H. R. (1996). Magnetic properties of 'ND IND.6''FE IND.14-X''AL IND.X' compounds ' (3Proceedings. Singapore: World Scientific.
    • NLM

      Jonen S, Rechenberg HR. Magnetic properties of 'ND IND.6''FE IND.14-X''AL IND.X' compounds ' (3
    • Vancouver

      Jonen S, Rechenberg HR. Magnetic properties of 'ND IND.6''FE IND.14-X''AL IND.X' compounds ' (3
  • Unidades: IF, EP

    Subjects: MATÉRIA CONDENSADA, MATERIAIS MAGNÉTICOS

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      Proceedings of the 9th international symposium magnetic anisotropy and coercivity in rare-earth transition metal alloys. . Singapore: World Scientific. . Acesso em: 02 jul. 2024. , 1996
    • APA

      Proceedings of the 9th international symposium magnetic anisotropy and coercivity in rare-earth transition metal alloys. (1996). Proceedings of the 9th international symposium magnetic anisotropy and coercivity in rare-earth transition metal alloys. Singapore: World Scientific.
    • NLM

      Proceedings of the 9th international symposium magnetic anisotropy and coercivity in rare-earth transition metal alloys. 1996 ;[citado 2024 jul. 02 ]
    • Vancouver

      Proceedings of the 9th international symposium magnetic anisotropy and coercivity in rare-earth transition metal alloys. 1996 ;[citado 2024 jul. 02 ]
  • Source: Materials Science and Engineering B 35. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

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    • ABNT

      ENDERLEIN, R et al. Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. 1996, Anais.. Cingapura: Elsevier, 1996. . Acesso em: 02 jul. 2024.
    • APA

      Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., Leite, J. R., & Dias, I. E. L. (1996). Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. In Materials Science and Engineering B 35. Cingapura: Elsevier.
    • NLM

      Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR, Dias IEL. Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. Materials Science and Engineering B 35. 1996 ;[citado 2024 jul. 02 ]
    • Vancouver

      Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR, Dias IEL. Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. Materials Science and Engineering B 35. 1996 ;[citado 2024 jul. 02 ]
  • Source: Materials Science and Engineering B. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      TABATA, A et al. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo. . Acesso em: 02 jul. 2024. , 1995
    • APA

      Tabata, A., Ceschin, A. M., Quivy, A. A., Levine, A., Leite, J. R., Enderlein, R., et al. (1995). Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo.
    • NLM

      Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2024 jul. 02 ]
    • Vancouver

      Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2024 jul. 02 ]

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