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Artigo de periodico
Investigation of deep defects and their effects on the properties of NiO/𝛽-Ga2O3 heterojuncion diodes (2023)
Almalki, Abdulaziz; Madani, Labed; Sengouga, Nouredine; Alhassan, Sultan; Alotaibi, Saud; Alhassni, Amra; Almunyif, Amjad; Chauhan, Jasbinder S.; Henini, Mohamed; Galeti, Helder Vinícius Avanço ; Gobato, Yara Galvão ; Godoy, Marcio Peron Franco de; Andrade, Marcelo Barbosa de ; Souto, Sérgio Paulo Amaral ; Zhou, Hong; Wang, Boyan; Xiao, Ming; Qin, Yuan; Zhang, Yuhao
Fonte: Materials Today Electronics. Unidade: IFSC
Assuntos: GÁLIO, FOTOLUMINESCÊNCIA, ESPECTROSCOPIA RAMAN
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ABNT
ALMALKI, Abdulaziz et al. Investigation of deep defects and their effects on the properties of NiO/𝛽-Ga2O3 heterojuncion diodes. Materials Today Electronics, v. 4, p. 100042-1-100042-12 + supplementary materials, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.mtelec.2023.100042. Acesso em: 04 nov. 2024.
APA
Almalki, A., Madani, L., Sengouga, N., Alhassan, S., Alotaibi, S., Alhassni, A., et al. (2023). Investigation of deep defects and their effects on the properties of NiO/𝛽-Ga2O3 heterojuncion diodes. Materials Today Electronics, 4, 100042-1-100042-12 + supplementary materials. doi:10.1016/j.mtelec.2023.100042
NLM
Almalki A, Madani L, Sengouga N, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Chauhan JS, Henini M, Galeti HVA, Gobato YG, Godoy MPF de, Andrade MB de, Souto SPA, Zhou H, Wang B, Xiao M, Qin Y, Zhang Y. Investigation of deep defects and their effects on the properties of NiO/𝛽-Ga2O3 heterojuncion diodes [Internet]. Materials Today Electronics. 2023 ; 4 100042-1-100042-12 + supplementary materials.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1016/j.mtelec.2023.100042
Vancouver
Almalki A, Madani L, Sengouga N, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Chauhan JS, Henini M, Galeti HVA, Gobato YG, Godoy MPF de, Andrade MB de, Souto SPA, Zhou H, Wang B, Xiao M, Qin Y, Zhang Y. Investigation of deep defects and their effects on the properties of NiO/𝛽-Ga2O3 heterojuncion diodes [Internet]. Materials Today Electronics. 2023 ; 4 100042-1-100042-12 + supplementary materials.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1016/j.mtelec.2023.100042
Artigo de periodico
Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy (2021)
Alhassan, Sultan; Souza, Daniele de; Alhassni, Amra; Almunyif, Amjad; Alotaibi, Saud; Almalki, Abdulaziz; Alhuwayz, Maryam; Kazakov, Igor P.; Klekovkin, Alexey V.; Tsekhosh, Vladimir I.; Likhachev, Igor A.; Pashaev, Elkhan M.; Souto, Sérgio Paulo Amaral ; Gobato, Yara Galvao ; Al Saqri, N.; Galeti, Helder Vinícius Avanço; Al Mashary, Faisal; Albalawi, Hindi; Alwadai, Norah; Henini, Mohamed
Fonte: Journal of Alloys and Compounds. Unidade: FZEA
Assuntos: SEMICONDUTORES, EPITAXIA POR FEIXE MOLECULAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALHASSAN, Sultan et al. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, v. 885, p. 1-11, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.jallcom.2021.161019. Acesso em: 04 nov. 2024.
APA
Alhassan, S., Souza, D. de, Alhassni, A., Almunyif, A., Alotaibi, S., Almalki, A., et al. (2021). Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy. Journal of Alloys and Compounds, 885, 1-11. doi:10.1016/j.jallcom.2021.161019
NLM
Alhassan S, Souza D de, Alhassni A, Almunyif A, Alotaibi S, Almalki A, Alhuwayz M, Kazakov IP, Klekovkin AV, Tsekhosh VI, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Al Saqri N, Galeti HVA, Al Mashary F, Albalawi H, Alwadai N, Henini M. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy [Internet]. Journal of Alloys and Compounds. 2021 ; 885 1-11.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1016/j.jallcom.2021.161019
Vancouver
Alhassan S, Souza D de, Alhassni A, Almunyif A, Alotaibi S, Almalki A, Alhuwayz M, Kazakov IP, Klekovkin AV, Tsekhosh VI, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Al Saqri N, Galeti HVA, Al Mashary F, Albalawi H, Alwadai N, Henini M. Investigation of the effect of substrate orientation on the structural, electrical and optical properties of n-type GaAs1−xBix layers grown by Molecular Beam Epitaxy [Internet]. Journal of Alloys and Compounds. 2021 ; 885 1-11.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1016/j.jallcom.2021.161019
Artigo de periodico
Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates (2021)
Souza, Daniele de; Alhassan, Sultan; Alotaibi, Saud; Alhassni, Amra; Almunyif, Amjad; Albalawi, Hindi; Kazakov, Igor P.; Klekovkin, Alexey V.; ZinovEv, Sergey A; Likhachev, Igor A.; Pashaev, Elkhan M.; Souto, Sérgio Paulo Amaral ; Gobato, Yara Galvao ; Galeti, Helder Vinícius Avanço; Henini, Mohamed
Fonte: Semiconductor Science and Technology. Unidade: FZEA
Assuntos: SEMICONDUTORES, EPITAXIA POR FEIXE MOLECULAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SOUZA, Daniele de et al. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, v. 36, n. 7, p. 1-12, 2021Tradução . . Disponível em: https://doi.org/10.1088/1361-6641/abf3d1. Acesso em: 04 nov. 2024.
APA
Souza, D. de, Alhassan, S., Alotaibi, S., Alhassni, A., Almunyif, A., Albalawi, H., et al. (2021). Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates. Semiconductor Science and Technology, 36( 7), 1-12. doi:10.1088/1361-6641/abf3d1
NLM
Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Albalawi H, Kazakov IP, Klekovkin AV, ZinovEv SA, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Galeti HVA, Henini M. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2021 ; 36( 7): 1-12.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1088/1361-6641/abf3d1
Vancouver
Souza D de, Alhassan S, Alotaibi S, Alhassni A, Almunyif A, Albalawi H, Kazakov IP, Klekovkin AV, ZinovEv SA, Likhachev IA, Pashaev EM, Souto SPA, Gobato YG, Galeti HVA, Henini M. Structural and optical properties of n-type and p-type GaAs(1−x)Bix thin films grown by molecular beam epitaxy on (311)B GaAs substrates [Internet]. Semiconductor Science and Technology. 2021 ; 36( 7): 1-12.[citado 2024 nov. 04 ] Available from: https://doi.org/10.1088/1361-6641/abf3d1

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