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Artigo de periodico
The impact of the temperature on In0.53Ga0.47As nTFETs (2018)
Bordallo, Caio Cesar Mendes ; Mocuta, Dan; Collaert, Nadine ; Alian, A; Simoen, Eddy ; Claeys, Cor ; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Rooyackers, Rita; Mols, Yannick; Van Dooren, A; Verhulst, Anne S; Lin, D
Source: Composants nanoélectroniques. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
BORDALLO, Caio Cesar Mendes et al. The impact of the temperature on In0.53Ga0.47As nTFETs. Composants nanoélectroniques, v. 18, n. 1, 2018Tradução . . Disponível em: https://doi.org/10.21494/iste.op.2018.0224. Acesso em: 12 jun. 2024.
APA
Bordallo, C. C. M., Mocuta, D., Collaert, N., Alian, A., Simoen, E., Claeys, C., et al. (2018). The impact of the temperature on In0.53Ga0.47As nTFETs. Composants nanoélectroniques, 18( 1). doi:10.21494/iste.op.2018.0224
NLM
Bordallo CCM, Mocuta D, Collaert N, Alian A, Simoen E, Claeys C, Agopian PGD, Martino JA, Rooyackers R, Mols Y, Van Dooren A, Verhulst AS, Lin D. The impact of the temperature on In0.53Ga0.47As nTFETs [Internet]. Composants nanoélectroniques. 2018 ;18( 1):[citado 2024 jun. 12 ] Available from: https://doi.org/10.21494/iste.op.2018.0224
Vancouver
Bordallo CCM, Mocuta D, Collaert N, Alian A, Simoen E, Claeys C, Agopian PGD, Martino JA, Rooyackers R, Mols Y, Van Dooren A, Verhulst AS, Lin D. The impact of the temperature on In0.53Ga0.47As nTFETs [Internet]. Composants nanoélectroniques. 2018 ;18( 1):[citado 2024 jun. 12 ] Available from: https://doi.org/10.21494/iste.op.2018.0224
Artigo de periodico
Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices (2013)
Agopian, Paula Ghedini Der ; Bordallo, Caio Cesar Mendes ; Simoen, Eddy ; Martino, João Antonio ; Claeys, Cor
Source: Solid-State Electronics Volume 90, December 2013, Pages 155-159. Unidade: EP
Subjects: SILÍCIO, IRRADIAÇÃO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AGOPIAN, Paula Ghedini Der et al. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices. Solid-State Electronics Volume 90, December 2013, Pages 155-159, v. 90, p. 155-159, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2013.02.037. Acesso em: 12 jun. 2024.
APA
Agopian, P. G. D., Bordallo, C. C. M., Simoen, E., Martino, J. A., & Claeys, C. (2013). Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices. Solid-State Electronics Volume 90, December 2013, Pages 155-159, 90, 155-159. doi:10.1016/j.sse.2013.02.037
NLM
Agopian PGD, Bordallo CCM, Simoen E, Martino JA, Claeys C. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 155-159. 2013 ; 90 155-159.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/j.sse.2013.02.037
Vancouver
Agopian PGD, Bordallo CCM, Simoen E, Martino JA, Claeys C. Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices [Internet]. Solid-State Electronics Volume 90, December 2013, Pages 155-159. 2013 ; 90 155-159.[citado 2024 jun. 12 ] Available from: https://doi.org/10.1016/j.sse.2013.02.037
Trabalho de evento
Temperature influence on nanowire tunnel field effect transistors (2012)
Neves, Felipe Souza; Martino, Márcio Dalla Valle; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Rooyackers, Rita ; Leonelli, Daniele ; Claeys, Cor
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
NEVES, Felipe Souza et al. Temperature influence on nanowire tunnel field effect transistors. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0223ecst. Acesso em: 12 jun. 2024.
APA
Neves, F. S., Martino, M. D. V., Agopian, P. G. D., Martino, J. A., Rooyackers, R., Leonelli, D., & Claeys, C. (2012). Temperature influence on nanowire tunnel field effect transistors. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0223ecst
NLM
Neves FS, Martino MDV, Agopian PGD, Martino JA, Rooyackers R, Leonelli D, Claeys C. Temperature influence on nanowire tunnel field effect transistors [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 jun. 12 ] Available from: https://doi.org/10.1149/04901.0223ecst
Vancouver
Neves FS, Martino MDV, Agopian PGD, Martino JA, Rooyackers R, Leonelli D, Claeys C. Temperature influence on nanowire tunnel field effect transistors [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 jun. 12 ] Available from: https://doi.org/10.1149/04901.0223ecst
Trabalho de evento
Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. (2012)
Bühler, Rudolf Theoderich ; Agopian, Paula Ghedini Der ; Simoen, Eddy ; Claeys, Cor ; Martino, João Antonio
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BÜHLER, Rudolf Theoderich et al. Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0145ecst. Acesso em: 12 jun. 2024.
APA
Bühler, R. T., Agopian, P. G. D., Simoen, E., Claeys, C., & Martino, J. A. (2012). Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0145ecst
NLM
Bühler RT, Agopian PGD, Simoen E, Claeys C, Martino JA. Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 jun. 12 ] Available from: https://doi.org/10.1149/04901.0145ecst
Vancouver
Bühler RT, Agopian PGD, Simoen E, Claeys C, Martino JA. Biaxial stress simulation and electrical characterization of triple-gate SOI nMOSFETs. [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 jun. 12 ] Available from: https://doi.org/10.1149/04901.0145ecst

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