ReP USP - Resultado da busca

Trabalho de evento-resumo
The effect of morphologies in the ozone gas sensing performance of ZnO samples (2014)
Silva, Luís F.; Catto, Ariadne C.; Mastelaro, Valmor Roberto ; Aguir, Khalifa; Longo, Elson; Ribeiro, Caue
Source: Book of Abstracts. Conference titles: International Meeting on Chemical Sensors - IMCS. Unidade: IFSC
Subjects: OZONIO, SEMICONDUTORES, ZINCO, SENSORES QUÍMICOS
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ABNT
SILVA, Luís F. et al. The effect of morphologies in the ozone gas sensing performance of ZnO samples. 2014, Anais.. Buenos Aires: Comisión Nacional de Energía Atómica - CNEA, 2014. . Acesso em: 03 nov. 2024.
APA
Silva, L. F., Catto, A. C., Mastelaro, V. R., Aguir, K., Longo, E., & Ribeiro, C. (2014). The effect of morphologies in the ozone gas sensing performance of ZnO samples. In Book of Abstracts. Buenos Aires: Comisión Nacional de Energía Atómica - CNEA.
NLM
Silva LF, Catto AC, Mastelaro VR, Aguir K, Longo E, Ribeiro C. The effect of morphologies in the ozone gas sensing performance of ZnO samples. Book of Abstracts. 2014 ;[citado 2024 nov. 03 ]
Vancouver
Silva LF, Catto AC, Mastelaro VR, Aguir K, Longo E, Ribeiro C. The effect of morphologies in the ozone gas sensing performance of ZnO samples. Book of Abstracts. 2014 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Investigation of vertical transport in thin layers based on group III-V semiconductors (2011)
Santos, O. F. P.; Rodrigues, S. C. P.; Sipahi, Guilherme Matos ; Scolfaro, L. M. R.; Silva Junior, E. F.
Source: Book of Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Subjects: SEMICONDUTORES, FENÔMENOS DE TRANSPORTE, FILMES FINOS
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SANTOS, O. F. P. et al. Investigation of vertical transport in thin layers based on group III-V semiconductors. 2011, Anais.. Melville: American Institute of Physics - AIP, 2011. . Acesso em: 03 nov. 2024.
APA
Santos, O. F. P., Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Silva Junior, E. F. (2011). Investigation of vertical transport in thin layers based on group III-V semiconductors. In Book of Abstracts. Melville: American Institute of Physics - AIP.
NLM
Santos OFP, Rodrigues SCP, Sipahi GM, Scolfaro LMR, Silva Junior EF. Investigation of vertical transport in thin layers based on group III-V semiconductors. Book of Abstracts. 2011 ;[citado 2024 nov. 03 ]
Vancouver
Santos OFP, Rodrigues SCP, Sipahi GM, Scolfaro LMR, Silva Junior EF. Investigation of vertical transport in thin layers based on group III-V semiconductors. Book of Abstracts. 2011 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields (2011)
Teodoro, M. D.; Campo Junior, V. L.; López-Richard, V.; Marega Junior, Euclydes ; Marques, G. E.; Gobato, Y. Galvão; Iikawa, F.; Brasil, M. J. S. P.; AbuWaard, Z. Y.; Dorogan, V. G.; Mazur, Yu I.; Benamara, M.; Salamo, G. J.
Source: Book of Abstracts. Conference titles: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Subjects: CAMPO MAGNÉTICO, FOTOLUMINESCÊNCIA, SEMICONDUTORES
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TEODORO, M. D. et al. Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields. 2011, Anais.. Melville: American Institute of Physics - AIP, 2011. . Acesso em: 03 nov. 2024.
APA
Teodoro, M. D., Campo Junior, V. L., López-Richard, V., Marega Junior, E., Marques, G. E., Gobato, Y. G., et al. (2011). Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields. In Book of Abstracts. Melville: American Institute of Physics - AIP.
NLM
Teodoro MD, Campo Junior VL, López-Richard V, Marega Junior E, Marques GE, Gobato YG, Iikawa F, Brasil MJSP, AbuWaard ZY, Dorogan VG, Mazur YI, Benamara M, Salamo GJ. Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields. Book of Abstracts. 2011 ;[citado 2024 nov. 03 ]
Vancouver
Teodoro MD, Campo Junior VL, López-Richard V, Marega Junior E, Marques GE, Gobato YG, Iikawa F, Brasil MJSP, AbuWaard ZY, Dorogan VG, Mazur YI, Benamara M, Salamo GJ. Aharonov-Bohm interference in neutral excitons: effects of built-in electric fields. Book of Abstracts. 2011 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Fabrication of semiconductor quantum dots for nanophotonics applications (2010)
Marega Junior, Euclydes
Source: Book of Abstracts. Conference titles: International Laser Physics Workshop - LPHYS'10. Unidade: IFSC
Subjects: SEMICONDUTORES, MATERIAIS NANOESTRUTURADOS, NANOTECNOLOGIA
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MAREGA JUNIOR, Euclydes. Fabrication of semiconductor quantum dots for nanophotonics applications. 2010, Anais.. Moscow: Russian Foundation for Basic Research, 2010. . Acesso em: 03 nov. 2024.
APA
Marega Junior, E. (2010). Fabrication of semiconductor quantum dots for nanophotonics applications. In Book of Abstracts. Moscow: Russian Foundation for Basic Research.
NLM
Marega Junior E. Fabrication of semiconductor quantum dots for nanophotonics applications. Book of Abstracts. 2010 ;[citado 2024 nov. 03 ]
Vancouver
Marega Junior E. Fabrication of semiconductor quantum dots for nanophotonics applications. Book of Abstracts. 2010 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Evidence of magnetic vortices formation in Mn-based sub-micrometer structures embedded in SiMn films (2009)
Ferri, Fabio Aparecido; Zanatta, Antonio Ricardo ; Silva, Marcelo de Assumpção Pereira da
Source: Book of Abstracts. Conference titles: International Conference on Amorphous and Nanocrystalline Semiconductors - ICANS. Unidade: IFSC
Subjects: SEMICONDUTORES, MANGANÊS, FILMES FINOS, PROPRIEDADES DOS MATERIAIS, FERROMAGNETISMO, SPIN
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FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo e SILVA, Marcelo de Assumpção Pereira da. Evidence of magnetic vortices formation in Mn-based sub-micrometer structures embedded in SiMn films. 2009, Anais.. Utrecht: Utrecht University, 2009. . Acesso em: 03 nov. 2024.
APA
Ferri, F. A., Zanatta, A. R., & Silva, M. de A. P. da. (2009). Evidence of magnetic vortices formation in Mn-based sub-micrometer structures embedded in SiMn films. In Book of Abstracts. Utrecht: Utrecht University.
NLM
Ferri FA, Zanatta AR, Silva M de AP da. Evidence of magnetic vortices formation in Mn-based sub-micrometer structures embedded in SiMn films. Book of Abstracts. 2009 ;[citado 2024 nov. 03 ]
Vancouver
Ferri FA, Zanatta AR, Silva M de AP da. Evidence of magnetic vortices formation in Mn-based sub-micrometer structures embedded in SiMn films. Book of Abstracts. 2009 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Structure and morphology of 'Ge IND.100-x''Mn IND.x' films prepared by sputtering (2009)
Ferri, Fabio Aparecido; Zanatta, Antonio Ricardo
Source: Book of Abstracts. Conference titles: International Conference on Amorphous and Nanocrystalline Semiconductors. Unidade: IFSC
Subjects: SEMICONDUTORES, GERMÂNIO, FILMES FINOS, PROPRIEDADES DOS MATERIAIS, FERROMAGNETISMO
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FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo. Structure and morphology of 'Ge IND.100-x''Mn IND.x' films prepared by sputtering. 2009, Anais.. Utrecht: Utrecht University, 2009. . Acesso em: 03 nov. 2024.
APA
Ferri, F. A., & Zanatta, A. R. (2009). Structure and morphology of 'Ge IND.100-x''Mn IND.x' films prepared by sputtering. In Book of Abstracts. Utrecht: Utrecht University.
NLM
Ferri FA, Zanatta AR. Structure and morphology of 'Ge IND.100-x''Mn IND.x' films prepared by sputtering. Book of Abstracts. 2009 ;[citado 2024 nov. 03 ]
Vancouver
Ferri FA, Zanatta AR. Structure and morphology of 'Ge IND.100-x''Mn IND.x' films prepared by sputtering. Book of Abstracts. 2009 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Analytic model for the capacitance behavior of polymeric devices at strong bipolar charge recombination regime (2008)
Santos, Lucas Fugikawa; Faria, Roberto Mendonça
Source: Book of Abstracts. Conference titles: International Conference on Science and Technology of Synthetic Metals - ICSM. Unidade: IFSC
Subjects: ÓPTICA ELETRÔNICA, ESPECTROSCOPIA, SEMICONDUTORES, CARGA ELÉTRICA
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SANTOS, Lucas Fugikawa e FARIA, Roberto Mendonça. Analytic model for the capacitance behavior of polymeric devices at strong bipolar charge recombination regime. 2008, Anais.. [s.l.]: Instituto de Física de São Carlos, Universidade de São Paulo, 2008. . Acesso em: 03 nov. 2024.
APA
Santos, L. F., & Faria, R. M. (2008). Analytic model for the capacitance behavior of polymeric devices at strong bipolar charge recombination regime. In Book of Abstracts. [s.l.]: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Santos LF, Faria RM. Analytic model for the capacitance behavior of polymeric devices at strong bipolar charge recombination regime. Book of Abstracts. 2008 ;[citado 2024 nov. 03 ]
Vancouver
Santos LF, Faria RM. Analytic model for the capacitance behavior of polymeric devices at strong bipolar charge recombination regime. Book of Abstracts. 2008 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Devices made with semiconducting polymers (2007)
Faria, Roberto Mendonça
Source: Book of Abstracts. Conference titles: International Symposium on Advanced Materials and Nanostructures - ISAMN. Unidade: IFSC
Subjects: POLÍMEROS (MATERIAIS), SEMICONDUTORES
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ABNT
FARIA, Roberto Mendonça. Devices made with semiconducting polymers. 2007, Anais.. São Carlos: Instituto de Física de São Carlos - IFSC/USP, 2007. . Acesso em: 03 nov. 2024.
APA
Faria, R. M. (2007). Devices made with semiconducting polymers. In Book of Abstracts. São Carlos: Instituto de Física de São Carlos - IFSC/USP.
NLM
Faria RM. Devices made with semiconducting polymers. Book of Abstracts. 2007 ;[citado 2024 nov. 03 ]
Vancouver
Faria RM. Devices made with semiconducting polymers. Book of Abstracts. 2007 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Energy modulated heterostructures for charge transfer and confinement based on conjugated polymers (2004)
Leite, Marco Antônio; Zucolotto, Valtencir ; Oliveira Junior, Osvaldo Novais de ; Guimarães, Francisco Eduardo Gontijo
Source: Book of Abstracts. Conference titles: International Conference on Synthetic Metals - ICSM. Unidade: IFSC
Subjects: POLÍMEROS (MATERIAIS), SEMICONDUTORES, FILMES FINOS
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ABNT
LEITE, Marco Antônio et al. Energy modulated heterostructures for charge transfer and confinement based on conjugated polymers. 2004, Anais.. Wollongong: University of Wollongong, Intelligent Polymer Research Institute, 2004. . Acesso em: 03 nov. 2024.
APA
Leite, M. A., Zucolotto, V., Oliveira Junior, O. N. de, & Guimarães, F. E. G. (2004). Energy modulated heterostructures for charge transfer and confinement based on conjugated polymers. In Book of Abstracts. Wollongong: University of Wollongong, Intelligent Polymer Research Institute.
NLM
Leite MA, Zucolotto V, Oliveira Junior ON de, Guimarães FEG. Energy modulated heterostructures for charge transfer and confinement based on conjugated polymers. Book of Abstracts. 2004 ;[citado 2024 nov. 03 ]
Vancouver
Leite MA, Zucolotto V, Oliveira Junior ON de, Guimarães FEG. Energy modulated heterostructures for charge transfer and confinement based on conjugated polymers. Book of Abstracts. 2004 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Detection properties of CdZnTe semiconductor for diagnostic X-ray spectroscopic applications (2003)
Freitas, M B; Medeiros, Fernando Homem de Mello; Yoshimura, Elisabeth Mateus
Source: Book of Abstracts. Conference titles: International Meeting on Applied Physics. Unidade: IF
Subjects: MEDICINA NUCLEAR, SEMICONDUTORES, ESPECTROSCOPIA DE RAIO X
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ABNT
FREITAS, M B e MEDEIROS, Fernando Homem de Mello e YOSHIMURA, Elisabeth Mateus. Detection properties of CdZnTe semiconductor for diagnostic X-ray spectroscopic applications. 2003, Anais.. Badajoz: APHYS, 2003. . Acesso em: 03 nov. 2024.
APA
Freitas, M. B., Medeiros, F. H. de M., & Yoshimura, E. M. (2003). Detection properties of CdZnTe semiconductor for diagnostic X-ray spectroscopic applications. In Book of Abstracts. Badajoz: APHYS.
NLM
Freitas MB, Medeiros FH de M, Yoshimura EM. Detection properties of CdZnTe semiconductor for diagnostic X-ray spectroscopic applications. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Vancouver
Freitas MB, Medeiros FH de M, Yoshimura EM. Detection properties of CdZnTe semiconductor for diagnostic X-ray spectroscopic applications. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
New opportunities in X-ray characterization of semiconductors (2003)
Morelhão, Sérgio Luiz
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, RAIOS X
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ABNT
MORELHÃO, Sérgio Luiz. New opportunities in X-ray characterization of semiconductors. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 03 nov. 2024.
APA
Morelhão, S. L. (2003). New opportunities in X-ray characterization of semiconductors. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Morelhão SL. New opportunities in X-ray characterization of semiconductors. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Vancouver
Morelhão SL. New opportunities in X-ray characterization of semiconductors. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
A comparative study on titanium impurities in silicon, diamond and silicon carbide (2003)
Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidades: IF, EP
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
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ASSALI, L. V. C. e MACHADO, Wanda Valle Marcondes e JUSTO FILHO, João Francisco. A comparative study on titanium impurities in silicon, diamond and silicon carbide. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 03 nov. 2024.
APA
Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2003). A comparative study on titanium impurities in silicon, diamond and silicon carbide. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Assali LVC, Machado WVM, Justo Filho JF. A comparative study on titanium impurities in silicon, diamond and silicon carbide. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Vancouver
Assali LVC, Machado WVM, Justo Filho JF. A comparative study on titanium impurities in silicon, diamond and silicon carbide. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Experimental and theoretical local structure of oxygen-rich amorphous silicon oxynitride (2003)
Scopel, Wanderla Luis ; Fantini, Márcia Carvalho de Abreu ; Prado, Rogerio Junqueira; Orellana, Walter M; Silva, Antonio Jose Roque da ; Fazzio, Adalberto ; Pereyra, Inés
Source: Book of Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidades: IF, EP
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
SCOPEL, Wanderla Luis et al. Experimental and theoretical local structure of oxygen-rich amorphous silicon oxynitride. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 03 nov. 2024.
APA
Scopel, W. L., Fantini, M. C. de A., Prado, R. J., Orellana, W. M., Silva, A. J. R. da, Fazzio, A., & Pereyra, I. (2003). Experimental and theoretical local structure of oxygen-rich amorphous silicon oxynitride. In Book of Abstracts. Fortaleza: DF/UFC.
NLM
Scopel WL, Fantini MC de A, Prado RJ, Orellana WM, Silva AJR da, Fazzio A, Pereyra I. Experimental and theoretical local structure of oxygen-rich amorphous silicon oxynitride. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Vancouver
Scopel WL, Fantini MC de A, Prado RJ, Orellana WM, Silva AJR da, Fazzio A, Pereyra I. Experimental and theoretical local structure of oxygen-rich amorphous silicon oxynitride. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
A first principles investigation of mercuric iodide: bulk properties and intrinsic effects (2003)
Ayres, F; Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco
Source: Book of Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidades: IF, EP
Assunto: SEMICONDUTORES
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ABNT
AYRES, F et al. A first principles investigation of mercuric iodide: bulk properties and intrinsic effects. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 03 nov. 2024.
APA
Ayres, F., Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2003). A first principles investigation of mercuric iodide: bulk properties and intrinsic effects. In Book of Abstracts. Fortaleza: DF/UFC.
NLM
Ayres F, Assali LVC, Machado WVM, Justo Filho JF. A first principles investigation of mercuric iodide: bulk properties and intrinsic effects. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Vancouver
Ayres F, Assali LVC, Machado WVM, Justo Filho JF. A first principles investigation of mercuric iodide: bulk properties and intrinsic effects. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain (2003)
Gomes, Paulo F; Godoy, M P F; Nakaema, M K K; Iikawa, F; Lamas, T. E.; Quivy, A. A.
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
GOMES, Paulo F et al. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 03 nov. 2024.
APA
Gomes, P. F., Godoy, M. P. F., Nakaema, M. K. K., Iikawa, F., Lamas, T. E., & Quivy, A. A. (2003). Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Gomes PF, Godoy MPF, Nakaema MKK, Iikawa F, Lamas TE, Quivy AA. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Vancouver
Gomes PF, Godoy MPF, Nakaema MKK, Iikawa F, Lamas TE, Quivy AA. Heavy- and light-hole subband anti-crossing in GaAs/AlGaAs quantum wells under tensile biaxial strain. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN (2003)
Alves, H W Leite; Alves, J L A; Santos, A M; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Book of Abstracts. Conference titles: International Conference on Defects in Semiconductors. Unidade: IF
Assunto: SEMICONDUTORES
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ALVES, H W Leite et al. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. 2003, Anais.. Amsterdam: Elsevier Science, 2003. . Acesso em: 03 nov. 2024.
APA
Alves, H. W. L., Alves, J. L. A., Santos, A. M., Scolfaro, L. M. R., & Leite, J. R. (2003). Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. In Book of Abstracts. Amsterdam: Elsevier Science.
NLM
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Vancouver
Alves HWL, Alves JLA, Santos AM, Scolfaro LMR, Leite JR. Ab initio calculation of the (100) and (110) surface phonon dispersion of GaAs and GaN. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Vacancy cluster evolution in silicon: response to external load (2003)
Malarenko Junior, H; Caldas, Marília Junqueira; Justo Filho, João Francisco
Source: Book of Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidades: IF, EP
Subjects: SEMICONDUTORES, MATERIAIS (PROPRIEDADES MECÂNICAS), PROPRIEDADES DOS MATERIAIS
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MALARENKO JUNIOR, H e CALDAS, Marília Junqueira e JUSTO FILHO, João Francisco. Vacancy cluster evolution in silicon: response to external load. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 03 nov. 2024.
APA
Malarenko Junior, H., Caldas, M. J., & Justo Filho, J. F. (2003). Vacancy cluster evolution in silicon: response to external load. In Book of Abstracts. Fortaleza: DF/UFC.
NLM
Malarenko Junior H, Caldas MJ, Justo Filho JF. Vacancy cluster evolution in silicon: response to external load. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Vancouver
Malarenko Junior H, Caldas MJ, Justo Filho JF. Vacancy cluster evolution in silicon: response to external load. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Acetronitride adsorption on the silicon (001) surface (2003)
Miotto, R; Ferraz, A. C.
Source: Book of Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: SEMICONDUTORES, SUPERFÍCIE FÍSICA
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MIOTTO, R e FERRAZ, A. C. Acetronitride adsorption on the silicon (001) surface. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 03 nov. 2024.
APA
Miotto, R., & Ferraz, A. C. (2003). Acetronitride adsorption on the silicon (001) surface. In Book of Abstracts. Fortaleza: DF/UFC.
NLM
Miotto R, Ferraz AC. Acetronitride adsorption on the silicon (001) surface. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Vancouver
Miotto R, Ferraz AC. Acetronitride adsorption on the silicon (001) surface. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Adsorption of maleic anhydride on the silicon (001) surface (2003)
Miotto, R; Ferraz, A. C.; Srivastava, G P
Source: Book of Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: SEMICONDUTORES, SUPERFÍCIE FÍSICA
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MIOTTO, R e FERRAZ, A. C. e SRIVASTAVA, G P. Adsorption of maleic anhydride on the silicon (001) surface. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 03 nov. 2024.
APA
Miotto, R., Ferraz, A. C., & Srivastava, G. P. (2003). Adsorption of maleic anhydride on the silicon (001) surface. In Book of Abstracts. Fortaleza: DF/UFC.
NLM
Miotto R, Ferraz AC, Srivastava GP. Adsorption of maleic anhydride on the silicon (001) surface. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Vancouver
Miotto R, Ferraz AC, Srivastava GP. Adsorption of maleic anhydride on the silicon (001) surface. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Trabalho de evento-resumo
Adsorption of Si and Ge in monoatomic Si(100) steps (2003)
Dalpian, G. M.; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Book of Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Subjects: SEMICONDUTORES, MICROSCOPIA ELETRÔNICA DE VARREDURA
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ABNT
DALPIAN, G. M. e SILVA, Antonio Jose Roque da e FAZZIO, Adalberto. Adsorption of Si and Ge in monoatomic Si(100) steps. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 03 nov. 2024.
APA
Dalpian, G. M., Silva, A. J. R. da, & Fazzio, A. (2003). Adsorption of Si and Ge in monoatomic Si(100) steps. In Book of Abstracts. Fortaleza: DF/UFC.
NLM
Dalpian GM, Silva AJR da, Fazzio A. Adsorption of Si and Ge in monoatomic Si(100) steps. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]
Vancouver
Dalpian GM, Silva AJR da, Fazzio A. Adsorption of Si and Ge in monoatomic Si(100) steps. Book of Abstracts. 2003 ;[citado 2024 nov. 03 ]

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