Structure and morphology of 'Ge IND.100-x''Mn IND.x' films prepared by sputtering (2009)
- Authors:
- Autor USP: ZANATTA, ANTONIO RICARDO - IFSC
- Unidade: IFSC
- Subjects: SEMICONDUTORES; GERMÂNIO; FILMES FINOS; PROPRIEDADES DOS MATERIAIS; FERROMAGNETISMO
- Language: Inglês
- Imprenta:
- Publisher: Utrecht University
- Publisher place: Utrecht
- Date published: 2009
- Source:
- Título do periódico: Book of Abstracts
- Conference titles: International Conference on Amorphous and Nanocrystalline Semiconductors
-
ABNT
FERRI, Fabio Aparecido e ZANATTA, Antonio Ricardo. Structure and morphology of 'Ge IND.100-x''Mn IND.x' films prepared by sputtering. 2009, Anais.. Utrecht: Utrecht University, 2009. . Acesso em: 19 abr. 2024. -
APA
Ferri, F. A., & Zanatta, A. R. (2009). Structure and morphology of 'Ge IND.100-x''Mn IND.x' films prepared by sputtering. In Book of Abstracts. Utrecht: Utrecht University. -
NLM
Ferri FA, Zanatta AR. Structure and morphology of 'Ge IND.100-x''Mn IND.x' films prepared by sputtering. Book of Abstracts. 2009 ;[citado 2024 abr. 19 ] -
Vancouver
Ferri FA, Zanatta AR. Structure and morphology of 'Ge IND.100-x''Mn IND.x' films prepared by sputtering. Book of Abstracts. 2009 ;[citado 2024 abr. 19 ] - Structural investigation of cobalt oxide films grown by reactive DC magnetron sputtering
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- Photoluminescence of Sm and Er doped amorphous AIN
- Photoelectron spectroscopic study of amoprhous GaAsN films
- Microcrystalline silicon with high electron field-effect mobility deposited at '230 GRAUS'
- Laser-induced generation of micrometer-sized luminescent patterns on rare-earth-doped amorphous films
- Photon and electron excitation of rare-earth-doped amorphous SiN films
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