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Artigo de periodico
Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate (2006)
Pacheco-Salazar, D G; Leite, J. R.; Cerdeira, F; Meneses, E A; Li, S F; As, D J; Lischka, K
Source: Semiconductor Science and Technology. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESPALHAMENTO
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ABNT
PACHECO-SALAZAR, D G et al. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, v. 21, n. 7, p. 846-851, 2006Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/21/7/003. Acesso em: 28 jun. 2024.
APA
Pacheco-Salazar, D. G., Leite, J. R., Cerdeira, F., Meneses, E. A., Li, S. F., As, D. J., & Lischka, K. (2006). Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate. Semiconductor Science and Technology, 21( 7), 846-851. doi:10.1088/0268-1242/21/7/003
NLM
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Vancouver
Pacheco-Salazar DG, Leite JR, Cerdeira F, Meneses EA, Li SF, As DJ, Lischka K. Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate [Internet]. Semiconductor Science and Technology. 2006 ; 21( 7): 846-851.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1088/0268-1242/21/7/003
Artigo de periodico
Growth and characterization of cubic (2005)
Pacheco-Salazar, D G; Li, S F; Cerdeira, F; Meneses, E A; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro; As, D J; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: CRISTALOGRAFIA, DIFRAÇÃO POR RAIOS X
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ABNT
PACHECO-SALAZAR, D G et al. Growth and characterization of cubic. Journal of Crystal Growth, v. 284, n. 3-4, p. 379-387, 2005Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20. Acesso em: 28 jun. 2024.
APA
Pacheco-Salazar, D. G., Li, S. F., Cerdeira, F., Meneses, E. A., Leite, J. R., Scolfaro, L. M. R., et al. (2005). Growth and characterization of cubic. Journal of Crystal Growth, 284( 3-4), 379-387. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
NLM
Pacheco-Salazar DG, Li SF, Cerdeira F, Meneses EA, Leite JR, Scolfaro LMR, As DJ, Lischka K. Growth and characterization of cubic [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 jun. 28 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Vancouver
Pacheco-Salazar DG, Li SF, Cerdeira F, Meneses EA, Leite JR, Scolfaro LMR, As DJ, Lischka K. Growth and characterization of cubic [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 jun. 28 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Artigo de periodico
Near band-edge optical properties of cubic GaN with and without carbon doping (2004)
Fernandez, J R L; Cerdeira, F; Meneses, E A; Soares, J A N T; Noriega, O C; Leite, J. R.; As, D J; Salazar, D G P; Schikora, D; Lischka, K
Source: Microelectronics Journal. Unidade: IF
Subjects: MATÉRIA CONDENSADA, FILMES FINOS, FOTOLUMINESCÊNCIA
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ABNT
FERNANDEZ, J R L et al. Near band-edge optical properties of cubic GaN with and without carbon doping. Microelectronics Journal, 2004Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00226-x. Acesso em: 28 jun. 2024.
APA
Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Soares, J. A. N. T., Noriega, O. C., Leite, J. R., et al. (2004). Near band-edge optical properties of cubic GaN with and without carbon doping. Microelectronics Journal. doi:10.1016/s0026-2692(03)00226-x
NLM
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Noriega OC, Leite JR, As DJ, Salazar DGP, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN with and without carbon doping [Internet]. Microelectronics Journal. 2004 ;[citado 2024 jun. 28 ] Available from: https://doi.org/10.1016/s0026-2692(03)00226-x
Vancouver
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Noriega OC, Leite JR, As DJ, Salazar DGP, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN with and without carbon doping [Internet]. Microelectronics Journal. 2004 ;[citado 2024 jun. 28 ] Available from: https://doi.org/10.1016/s0026-2692(03)00226-x
Artigo de periodico
Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions (2004)
Chitta, Valmir Antonio; Coaquira, J A H; Fernandez, J R L; Duarte, C A; Leite, J. R.; Schikora, D; As, D J; Lischka, K; Abramof, E
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, FILMES FINOS, DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA RAMAN
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ABNT
CHITTA, Valmir Antonio et al. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions. Applied Physics Letters, v. 85, n. 17, p. 3777-3779, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1812590. Acesso em: 28 jun. 2024.
APA
Chitta, V. A., Coaquira, J. A. H., Fernandez, J. R. L., Duarte, C. A., Leite, J. R., Schikora, D., et al. (2004). Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions. Applied Physics Letters, 85( 17), 3777-3779. doi:10.1063/1.1812590
NLM
Chitta VA, Coaquira JAH, Fernandez JRL, Duarte CA, Leite JR, Schikora D, As DJ, Lischka K, Abramof E. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions [Internet]. Applied Physics Letters. 2004 ; 85( 17): 3777-3779.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1063/1.1812590
Vancouver
Chitta VA, Coaquira JAH, Fernandez JRL, Duarte CA, Leite JR, Schikora D, As DJ, Lischka K, Abramof E. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions [Internet]. Applied Physics Letters. 2004 ; 85( 17): 3777-3779.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1063/1.1812590
Artigo de periodico
Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates (2003)
Noriega, O C; Tabata, A; Soares, J A N T; Rodrigues, S C P; Leite, J. R.; Ribeiro, E; Fernandez, J R L; Meneses, E A; Cerdeira, F; As, D J; Schikora, D; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA
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ABNT
NORIEGA, O C et al. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates. Journal of Crystal Growth, v. 252, n. 1-3, p. 208-212, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(02)02517-4. Acesso em: 28 jun. 2024.
APA
Noriega, O. C., Tabata, A., Soares, J. A. N. T., Rodrigues, S. C. P., Leite, J. R., Ribeiro, E., et al. (2003). Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates. Journal of Crystal Growth, 252( 1-3), 208-212. doi:10.1016/s0022-0248(02)02517-4
NLM
Noriega OC, Tabata A, Soares JANT, Rodrigues SCP, Leite JR, Ribeiro E, Fernandez JRL, Meneses EA, Cerdeira F, As DJ, Schikora D, Lischka K. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates [Internet]. Journal of Crystal Growth. 2003 ; 252( 1-3): 208-212.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1016/s0022-0248(02)02517-4
Vancouver
Noriega OC, Tabata A, Soares JANT, Rodrigues SCP, Leite JR, Ribeiro E, Fernandez JRL, Meneses EA, Cerdeira F, As DJ, Schikora D, Lischka K. Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates [Internet]. Journal of Crystal Growth. 2003 ; 252( 1-3): 208-212.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1016/s0022-0248(02)02517-4
Artigo de periodico
Near band-edge optical properties of cubic GaN (2003)
Fernandez, J R L; Noriega, O C; Soares, J A N T; Cerdeira, F; Meneses, E A; Leite, J. R.; As, D J; Schikora, D; Lischka, K
Source: Solid State Communications. Unidade: IF
Subjects: FILMES FINOS, ESTRUTURA ELETRÔNICA, SEMICONDUTORES
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ABNT
FERNANDEZ, J R L et al. Near band-edge optical properties of cubic GaN. Solid State Communications, v. 125, n. 3-4, p. 205-208, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0038-1098(02)00768-8. Acesso em: 28 jun. 2024.
APA
Fernandez, J. R. L., Noriega, O. C., Soares, J. A. N. T., Cerdeira, F., Meneses, E. A., Leite, J. R., et al. (2003). Near band-edge optical properties of cubic GaN. Solid State Communications, 125( 3-4), 205-208. doi:10.1016/s0038-1098(02)00768-8
NLM
Fernandez JRL, Noriega OC, Soares JANT, Cerdeira F, Meneses EA, Leite JR, As DJ, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN [Internet]. Solid State Communications. 2003 ; 125( 3-4): 205-208.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1016/s0038-1098(02)00768-8
Vancouver
Fernandez JRL, Noriega OC, Soares JANT, Cerdeira F, Meneses EA, Leite JR, As DJ, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN [Internet]. Solid State Communications. 2003 ; 125( 3-4): 205-208.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1016/s0038-1098(02)00768-8
Artigo de periodico
Strain-induced ordering in 'In IND.X' 'Ga IND.1-X' N alloys (2003)
Teles, L. K.; Ferreira, L G; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro; Kharchenko, A; Husberg, O; As, D J; Schikora, D; Lischka, K
Source: Applied Physics Letters. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
TELES, L. K. et al. Strain-induced ordering in 'In IND.X' 'Ga IND.1-X' N alloys. Applied Physics Letters, v. 82, n. 24, p. 4274-4276, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000082000024004274000001&idtype=cvips. Acesso em: 28 jun. 2024.
APA
Teles, L. K., Ferreira, L. G., Leite, J. R., Scolfaro, L. M. R., Kharchenko, A., Husberg, O., et al. (2003). Strain-induced ordering in 'In IND.X' 'Ga IND.1-X' N alloys. Applied Physics Letters, 82( 24), 4274-4276. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000082000024004274000001&idtype=cvips
NLM
Teles LK, Ferreira LG, Leite JR, Scolfaro LMR, Kharchenko A, Husberg O, As DJ, Schikora D, Lischka K. Strain-induced ordering in 'In IND.X' 'Ga IND.1-X' N alloys [Internet]. Applied Physics Letters. 2003 ; 82( 24): 4274-4276.[citado 2024 jun. 28 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000082000024004274000001&idtype=cvips
Vancouver
Teles LK, Ferreira LG, Leite JR, Scolfaro LMR, Kharchenko A, Husberg O, As DJ, Schikora D, Lischka K. Strain-induced ordering in 'In IND.X' 'Ga IND.1-X' N alloys [Internet]. Applied Physics Letters. 2003 ; 82( 24): 4274-4276.[citado 2024 jun. 28 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000082000024004274000001&idtype=cvips
Artigo de periodico
Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers (2002)
Teles, L. K.; Furthmüller, J; Scolfaro, Luisa Maria Ribeiro; Tabata, A; Leite, J. R.; Bechstedt, F; Frey, T; As, D J; Lischka, K
Source: Physica E. Unidade: IF
Subjects: SEMICONDUTIVIDADE, TERMODINÂMICA, ESPECTROSCOPIA RAMAN, ESPECTROSCOPIA DE RAIO X
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ABNT
TELES, L. K. et al. Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers. Physica E, v. 13, n. 2-4, p. 1086-1089, 2002Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(02)00309-0. Acesso em: 28 jun. 2024.
APA
Teles, L. K., Furthmüller, J., Scolfaro, L. M. R., Tabata, A., Leite, J. R., Bechstedt, F., et al. (2002). Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers. Physica E, 13( 2-4), 1086-1089. doi:10.1016/s1386-9477(02)00309-0
NLM
Teles LK, Furthmüller J, Scolfaro LMR, Tabata A, Leite JR, Bechstedt F, Frey T, As DJ, Lischka K. Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers [Internet]. Physica E. 2002 ; 13( 2-4): 1086-1089.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1016/s1386-9477(02)00309-0
Vancouver
Teles LK, Furthmüller J, Scolfaro LMR, Tabata A, Leite JR, Bechstedt F, Frey T, As DJ, Lischka K. Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers [Internet]. Physica E. 2002 ; 13( 2-4): 1086-1089.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1016/s1386-9477(02)00309-0
Artigo de periodico
Phase separation suppression in InGaN epitaxial layers due to biaxial strain (2002)
Tabata, A; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Kharchenko, A; Frey, T; As, D J; Schikora, D; Lischka, K; Furthmüller, J; Bechstedt, F
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, ESPECTROSCOPIA RAMAN
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ABNT
TABATA, A et al. Phase separation suppression in InGaN epitaxial layers due to biaxial strain. Applied Physics Letters, v. 80, n. 5, p. 769-771, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1436270. Acesso em: 28 jun. 2024.
APA
Tabata, A., Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Kharchenko, A., Frey, T., et al. (2002). Phase separation suppression in InGaN epitaxial layers due to biaxial strain. Applied Physics Letters, 80( 5), 769-771. doi:10.1063/1.1436270
NLM
Tabata A, Teles LK, Scolfaro LMR, Leite JR, Kharchenko A, Frey T, As DJ, Schikora D, Lischka K, Furthmüller J, Bechstedt F. Phase separation suppression in InGaN epitaxial layers due to biaxial strain [Internet]. Applied Physics Letters. 2002 ; 80( 5): 769-771.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1063/1.1436270
Vancouver
Tabata A, Teles LK, Scolfaro LMR, Leite JR, Kharchenko A, Frey T, As DJ, Schikora D, Lischka K, Furthmüller J, Bechstedt F. Phase separation suppression in InGaN epitaxial layers due to biaxial strain [Internet]. Applied Physics Letters. 2002 ; 80( 5): 769-771.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1063/1.1436270
Artigo de periodico
Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers (2002)
Pusep, Yuri A.; Silva, M T O; Fernandez, J R L; Chitta, V A; Leite, J. R.; Frey, T; As, D J; Schikora, D; Lischka, K
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: SEMICONDUTORES, SEMICONDUTIVIDADE
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ABNT
PUSEP, Yuri A. et al. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, v. 91, n. 9, p. 6197-6199, 2002Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips. Acesso em: 28 jun. 2024.
APA
Pusep, Y. A., Silva, M. T. O., Fernandez, J. R. L., Chitta, V. A., Leite, J. R., Frey, T., et al. (2002). Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers. Journal of Applied Physics, 91( 9), 6197-6199. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
NLM
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2024 jun. 28 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Vancouver
Pusep YA, Silva MTO, Fernandez JRL, Chitta VA, Leite JR, Frey T, As DJ, Schikora D, Lischka K. Raman study of collective plasmon-longitudinal optical phonon excitations in cubic GaN and 'Al IND.X' 'Ga IND.1-X'N epitaxial layers [Internet]. Journal of Applied Physics. 2002 ; 91( 9): 6197-6199.[citado 2024 jun. 28 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000091000009006197000001&idtype=cvips
Artigo de periodico
Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures (2002)
Husberg, O; Khartchenko, A; Vogelsang, H; As, D J; Lischka, K; Noriega, Odille Cue; Tabata, Americo; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Physica E. Unidade: IF
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, PROPRIEDADES DOS MATERIAIS, MATERIAIS, FILMES FINOS
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ABNT
HUSBERG, O et al. Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures. Physica E, v. 13, n. 2-4, p. 1090-1093, 2002Tradução . . Disponível em: https://doi.org/10.1016/s1386-9477(02)00310-7. Acesso em: 28 jun. 2024.
APA
Husberg, O., Khartchenko, A., Vogelsang, H., As, D. J., Lischka, K., Noriega, O. C., et al. (2002). Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures. Physica E, 13( 2-4), 1090-1093. doi:10.1016/s1386-9477(02)00310-7
NLM
Husberg O, Khartchenko A, Vogelsang H, As DJ, Lischka K, Noriega OC, Tabata A, Scolfaro LMR, Leite JR. Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures [Internet]. Physica E. 2002 ; 13( 2-4): 1090-1093.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1016/s1386-9477(02)00310-7
Vancouver
Husberg O, Khartchenko A, Vogelsang H, As DJ, Lischka K, Noriega OC, Tabata A, Scolfaro LMR, Leite JR. Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures [Internet]. Physica E. 2002 ; 13( 2-4): 1090-1093.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1016/s1386-9477(02)00310-7
Artigo de periodico
Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems (2001)
Fernandez, J R L; Araujo, C Moyses; Silva, A Ferreira da; Leite, J. R.; Sernelius, Bo E; Tabata, A; Abramog, E; Chitta, V A; Persson, C; Ahuja, R; Pepe, I; As, D J; Frey, T; Schikora, D; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: DIELÉTRICOS, RESISTÊNCIA ELÉTRICA, MATERIAIS (ANÁLISE;TESTES), RESISTÊNCIA DOS MATERIAIS
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ABNT
FERNANDEZ, J R L et al. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, v. 231, n. 3, p. 420-427, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(01)01473-7. Acesso em: 28 jun. 2024.
APA
Fernandez, J. R. L., Araujo, C. M., Silva, A. F. da, Leite, J. R., Sernelius, B. E., Tabata, A., et al. (2001). Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems. Journal of Crystal Growth, 231( 3), 420-427. doi:10.1016/s0022-0248(01)01473-7
NLM
Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1016/s0022-0248(01)01473-7
Vancouver
Fernandez JRL, Araujo CM, Silva AF da, Leite JR, Sernelius BE, Tabata A, Abramog E, Chitta VA, Persson C, Ahuja R, Pepe I, As DJ, Frey T, Schikora D, Lischka K. Electrical resistivity and band-gap shift of Si-doped GaN and metal-nometal transition in cubic GaN, InN and AlN systems [Internet]. Journal of Crystal Growth. 2001 ; 231( 3): 420-427.[citado 2024 jun. 28 ] Available from: https://doi.org/10.1016/s0022-0248(01)01473-7
Artigo de periodico
MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties (2001)
As, D J; Frey, T; Barttls, M; Lischka, K; Goldhahn, R; Shokhovets, S; Tabata, A; Fernandez, J R L; Leite, J. R.
Source: Journal of Crstal Growth. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, MAGNETISMO, SEMICONDUTORES, MATÉRIA CONDENSADA, ÓPTICA (PROPRIEDADES)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AS, D J et al. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, v. 230, n. 3-4, p. 421-425, 2001Tradução . . Disponível em: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf. Acesso em: 28 jun. 2024.
APA
As, D. J., Frey, T., Barttls, M., Lischka, K., Goldhahn, R., Shokhovets, S., et al. (2001). MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, 230( 3-4), 421-425. Recuperado de http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
NLM
As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.[citado 2024 jun. 28 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
Vancouver
As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.[citado 2024 jun. 28 ] Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf
Artigo de periodico
Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering (2000)
Lemos, V; Silveira, E; Leite, J. R.; Tabata, A; Trentin, R.; Scolfaro, Luisa Maria Ribeiro; Frey, T; As, D J; Schikora, D; Lischka, K
Source: Physical Review Letters. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LEMOS, V et al. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering. Physical Review Letters, v. 84, n. 16, p. 3666-3669, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips. Acesso em: 28 jun. 2024.
APA
Lemos, V., Silveira, E., Leite, J. R., Tabata, A., Trentin, R., Scolfaro, L. M. R., et al. (2000). Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering. Physical Review Letters, 84( 16), 3666-3669. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips
NLM
Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Scolfaro LMR, Frey T, As DJ, Schikora D, Lischka K. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering [Internet]. Physical Review Letters. 2000 ; 84( 16): 3666-3669.[citado 2024 jun. 28 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips
Vancouver
Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Scolfaro LMR, Frey T, As DJ, Schikora D, Lischka K. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering [Internet]. Physical Review Letters. 2000 ; 84( 16): 3666-3669.[citado 2024 jun. 28 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips

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