MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties (2001)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: DIFRAÇÃO POR RAIOS X; MAGNETISMO; SEMICONDUTORES; MATÉRIA CONDENSADA; ÓPTICA (PROPRIEDADES)
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Crstal Growth
- ISSN: 0022-0248
- Volume/Número/Paginação/Ano: v. 230, n. 3-4, p. 421-425, 2001
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ABNT
AS, D J; FREY, T; BARTTLS, M; et al. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, Amsterdam, v. 230, n. 3-4, p. 421-425, 2001. Disponível em: < http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf >. -
APA
As, D. J., Frey, T., Barttls, M., Lischka, K., Goldhahn, R., Shokhovets, S., et al. (2001). MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties. Journal of Crstal Growth, 230( 3-4), 421-425. Recuperado de http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf -
NLM
As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf -
Vancouver
As DJ, Frey T, Barttls M, Lischka K, Goldhahn R, Shokhovets S, Tabata A, Fernandez JRL, Leite JR. MBE growth of cubic 'Al IND.Y' 'Ga IND.1-Y'N/GaN heterostructures, vibrational and optical properties [Internet]. Journal of Crstal Growth. 2001 ; 230( 3-4): 421-425.Available from: http://e5500.fapesp.br/cgi-bin/sciserv.pl?collection=journals&journal=00220248&issue=v230i3-4&article=421_mgocahvaop&form=pdf&file=file.pdf - Microscopic mechanism of hydrogen passivation of acceptor shallow levels in silicon
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- One-electron states induced by 3d-transition metal impurities in diamond
- Pontos quânticos crescidos expontaneamente em c-'In IND. X''Ga IND. 1-X'N
- Mbe growth and characterization of iii-v related heterostructures at the physics institute, sao paulo university
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