Source: Solid State Communications. Unidade: IFSC
Subjects: ÓPTICA (PROPRIEDADES), FILMES FINOS, EMISSÃO DA LUZ, LUMINESCÊNCIA
ABNT
GALLO, I. B. e ZANATTA, Antonio Ricardo. Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films. Solid State Communications, v. 151, n. 8, p. 587-590, 2011Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2011.02.012. Acesso em: 02 set. 2024.APA
Gallo, I. B., & Zanatta, A. R. (2011). Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films. Solid State Communications, 151( 8), 587-590. doi:10.1016/j.ssc.2011.02.012NLM
Gallo IB, Zanatta AR. Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films [Internet]. Solid State Communications. 2011 ; 151( 8): 587-590.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.ssc.2011.02.012Vancouver
Gallo IB, Zanatta AR. Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films [Internet]. Solid State Communications. 2011 ; 151( 8): 587-590.[citado 2024 set. 02 ] Available from: https://doi.org/10.1016/j.ssc.2011.02.012