Menu

Filtros : "Martino, João Antonio" "Nissimoff, Albert" "Estados Unidos" Removidos: "Dietzsch, Olácio" "BUENO, SONIA MARIA VILLELA" "Reuniao Anual da Sociedade Brasileira de Bioquimica e Biologia Molecular" Limpar

Filtros

Refine with date range

  • 1

1 - 3 (3 records)

  • Artigo de periodico

    Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time (2014)

    Nissimoff, Albert; Martino, João Antonio ; Aoulaiche, Marc; Veloso, Anabela; Witters, Liesbeth J.; Simoen, Eddy ; Claeys, Cor

    Source: IEEE Electron Device Letters. Unidade: EP

    Subjects: TRANSISTORES, MODELOS MATEMÁTICOS, CAPACITORES

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      NISSIMOFF, Albert et al. Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time. IEEE Electron Device Letters, v. 35, n. 6, p. 639-641, 2014Tradução . . Disponível em: https://doi.org/10.1109/led.2014.2319094. Acesso em: 06 jul. 2024.

    • APA

      Nissimoff, A., Martino, J. A., Aoulaiche, M., Veloso, A., Witters, L. J., Simoen, E., & Claeys, C. (2014). Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time. IEEE Electron Device Letters, 35( 6), 639-641. doi:10.1109/led.2014.2319094

    • NLM

      Nissimoff A, Martino JA, Aoulaiche M, Veloso A, Witters LJ, Simoen E, Claeys C. Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time [Internet]. IEEE Electron Device Letters. 2014 ; 35( 6): 639-641.[citado 2024 jul. 06 ] Available from: https://doi.org/10.1109/led.2014.2319094

    • Vancouver

      Nissimoff A, Martino JA, Aoulaiche M, Veloso A, Witters LJ, Simoen E, Claeys C. Spike Anneal Peak Temperature Impact on 1T-DRAM Retention Time [Internet]. IEEE Electron Device Letters. 2014 ; 35( 6): 639-641.[citado 2024 jul. 06 ] Available from: https://doi.org/10.1109/led.2014.2319094

  • Artigo de periodico

    Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results (2014)

    Nissimoff, Albert; Claeys, Cor ; Aoulaiche, Marc; Sasaki, Karen Lucia Mayumi; Simoen, Eddy ; Martino, João Antonio

    Source: Journal of Integrated Circuits and Systems. Unidade: EP

    Assunto: MICROELETRÔNICA

    Acesso à fonteAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      NISSIMOFF, Albert et al. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 91-96, 2014Tradução . . Disponível em: https://doi.org/10.29292/jics.v9i2.393. Acesso em: 06 jul. 2024.

    • APA

      Nissimoff, A., Claeys, C., Aoulaiche, M., Sasaki, K. L. M., Simoen, E., & Martino, J. A. (2014). Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results. Journal of Integrated Circuits and Systems, 9( 2), 91-96. doi:10.29292/jics.v9i2.393

    • NLM

      Nissimoff A, Claeys C, Aoulaiche M, Sasaki KLM, Simoen E, Martino JA. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 91-96.[citado 2024 jul. 06 ] Available from: https://doi.org/10.29292/jics.v9i2.393

    • Vancouver

      Nissimoff A, Claeys C, Aoulaiche M, Sasaki KLM, Simoen E, Martino JA. Observation of the Two-Sided Read Window on UTBOX SOI 1T-DRAM: Measurement Setup, Numerical and Empirical Results [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 91-96.[citado 2024 jul. 06 ] Available from: https://doi.org/10.29292/jics.v9i2.393

  • Artigo de periodico

    Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications (2014)

    Sasaki, Karen Lucia Mayumi; Nicoletti, Talitha; Almeida, L M; Santos, Sara Dereste dos; Nissimoff, Albert; Aoulaiche, Marc; Martino, João Antonio

    Source: Solid-State Electronics. Unidade: EP

    Assunto: TRANSISTORES

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      SASAKI, Karen Lucia Mayumi et al. Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications. Solid-State Electronics, v. 97, p. 30-37, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2014.04.031. Acesso em: 06 jul. 2024.

    • APA

      Sasaki, K. L. M., Nicoletti, T., Almeida, L. M., Santos, S. D. dos, Nissimoff, A., Aoulaiche, M., & Martino, J. A. (2014). Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications. Solid-State Electronics, 97, 30-37. doi:10.1016/j.sse.2014.04.031

    • NLM

      Sasaki KLM, Nicoletti T, Almeida LM, Santos SD dos, Nissimoff A, Aoulaiche M, Martino JA. Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications [Internet]. Solid-State Electronics. 2014 ;97 30-37.[citado 2024 jul. 06 ] Available from: https://doi.org/10.1016/j.sse.2014.04.031

    • Vancouver

      Sasaki KLM, Nicoletti T, Almeida LM, Santos SD dos, Nissimoff A, Aoulaiche M, Martino JA. Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications [Internet]. Solid-State Electronics. 2014 ;97 30-37.[citado 2024 jul. 06 ] Available from: https://doi.org/10.1016/j.sse.2014.04.031
  • 1

1 - 3 (3 records)

Digital Library of Intellectual Production of Universidade de São Paulo     2012 - 2024