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Artigo de periodico
Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities (2013)
Simoen, Eddy ; Martino, João Antonio ; Aoulaiche, Marc; Santos, Sara Dereste dos; Strobel, V; Cretu, B; Routoure, J.-M; Carin, R; Rodriguez, Adriana Pinheiro Martinelli; Tejada, Julián; Claeys, Cor ; Rodriguez, A. Luque
Source: ECS Journal of Solid State Science and Technology. Unidade: EP
Subjects: SILÍCIO, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMOEN, Eddy et al. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, v. 2, n. 11, p. Q205-Q210, 2013Tradução . . Disponível em: https://doi.org/10.1149/2.011311jss. Acesso em: 01 nov. 2024.
APA
Simoen, E., Martino, J. A., Aoulaiche, M., Santos, S. D. dos, Strobel, V., Cretu, B., et al. (2013). Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, 2( 11), Q205-Q210. doi:10.1149/2.011311jss
NLM
Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Rodriguez APM, Tejada J, Claeys C, Rodriguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1149/2.011311jss
Vancouver
Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Rodriguez APM, Tejada J, Claeys C, Rodriguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1149/2.011311jss
Artigo de periodico
On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs (2013)
Santos, Sara Dereste dos; Nicoletti, Talitha; Martino, João Antonio ; Aoulaiche, Marc; Veloso, Anabela; Jurczak, Malgorzata; Simoen, Eddy ; Claeys, Cor
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: SILÍCIO, FILMES FINOS, AVALIAÇÃO DE DESEMPENHO, TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Sara Dereste dos et al. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs. IEEE Transactions on Electron Devices, v. 60, n. 1, p. 444-450, 2013Tradução . . Disponível em: https://doi.org/10.1109/ted.2012.2227749. Acesso em: 01 nov. 2024.
APA
Santos, S. D. dos, Nicoletti, T., Martino, J. A., Aoulaiche, M., Veloso, A., Jurczak, M., et al. (2013). On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs. IEEE Transactions on Electron Devices, 60( 1), 444-450. doi:10.1109/ted.2012.2227749
NLM
Santos SD dos, Nicoletti T, Martino JA, Aoulaiche M, Veloso A, Jurczak M, Simoen E, Claeys C. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs [Internet]. IEEE Transactions on Electron Devices. 2013 ; 60( 1): 444-450.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1109/ted.2012.2227749
Vancouver
Santos SD dos, Nicoletti T, Martino JA, Aoulaiche M, Veloso A, Jurczak M, Simoen E, Claeys C. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs [Internet]. IEEE Transactions on Electron Devices. 2013 ; 60( 1): 444-450.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1109/ted.2012.2227749
Relatorio tecnico
New methods for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor (2002)
Sonnenberg, Victor ; Martino, João Antonio
Unidade: EP
Assunto: FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. New methods for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. . São Paulo: EPUSP. . Acesso em: 01 nov. 2024. , 2002
APA
Sonnenberg, V., & Martino, J. A. (2002). New methods for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. São Paulo: EPUSP.
NLM
Sonnenberg V, Martino JA. New methods for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. 2002 ;[citado 2024 nov. 01 ]
Vancouver
Sonnenberg V, Martino JA. New methods for determining the silicon film doping concentration and the back interface oxide charge density using SOI-MOS capacitor. 2002 ;[citado 2024 nov. 01 ]
Artigo de periodico
Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices (2002)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Solid-State Electronics. Unidade: EP
Assunto: FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices. Solid-State Electronics, n. 9, p. 1381-1387, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(02)00067-9. Acesso em: 01 nov. 2024.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2002). Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices. Solid-State Electronics, ( 9), 1381-1387. doi:10.1016/s0038-1101(02)00067-9
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices [Internet]. Solid-State Electronics. 2002 ;( 9): 1381-1387.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/s0038-1101(02)00067-9
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices [Internet]. Solid-State Electronics. 2002 ;( 9): 1381-1387.[citado 2024 nov. 01 ] Available from: https://doi.org/10.1016/s0038-1101(02)00067-9

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