Source: Poster Session. Conference titles: Encontro Nacional de Física da Matéria Condensada. Unidade: IF
Subjects: FÍSICA DA MATÉRIA CONDENSADA, SEMICONDUTORES
ABNT
PELÁ, Ronaldo Rodrigues et al. Accurate electronic band gap and electron e®ective masses of AlGaN and InGaN from LDA-1/2 calculations. 2009, Anais.. São Paulo: SBF, 2009. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0930-3.pdf. Acesso em: 17 ago. 2024.APA
Pelá, R. R., Caetano, C., Teles, L. K., Marques, M., & Ferreira, L. G. (2009). Accurate electronic band gap and electron e®ective masses of AlGaN and InGaN from LDA-1/2 calculations. In Poster Session. São Paulo: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0930-3.pdfNLM
Pelá RR, Caetano C, Teles LK, Marques M, Ferreira LG. Accurate electronic band gap and electron e®ective masses of AlGaN and InGaN from LDA-1/2 calculations [Internet]. Poster Session. 2009 ;[citado 2024 ago. 17 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0930-3.pdfVancouver
Pelá RR, Caetano C, Teles LK, Marques M, Ferreira LG. Accurate electronic band gap and electron e®ective masses of AlGaN and InGaN from LDA-1/2 calculations [Internet]. Poster Session. 2009 ;[citado 2024 ago. 17 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enfmc/xxxii/sys/resumos/R0930-3.pdf