Recombination dynamics of Landau levels in an InGaAs/InP quantum well (2018)
Source: Physical Review B. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
ABNT
TEODORO, M. D. et al. Recombination dynamics of Landau levels in an InGaAs/InP quantum well. Physical Review B, v. 98, n. 15, p. 155431-1-155431-7, 2018Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.98.155431. Acesso em: 10 set. 2024.APA
Teodoro, M. D., Tavares, B. G. M., Castro, E. D. G., LaPierre, R. R., & Pusep, Y. A. (2018). Recombination dynamics of Landau levels in an InGaAs/InP quantum well. Physical Review B, 98( 15), 155431-1-155431-7. doi:10.1103/PhysRevB.98.155431NLM
Teodoro MD, Tavares BGM, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Physical Review B. 2018 ; 98( 15): 155431-1-155431-7.[citado 2024 set. 10 ] Available from: https://doi.org/10.1103/PhysRevB.98.155431Vancouver
Teodoro MD, Tavares BGM, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Physical Review B. 2018 ; 98( 15): 155431-1-155431-7.[citado 2024 set. 10 ] Available from: https://doi.org/10.1103/PhysRevB.98.155431