Improving of the p-type doping by carbon in cubic GaN samples under Ga-rich growth conditions (2003)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: MATERIAIS; MATÉRIA CONDENSADA; ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Publisher: SBPMat
- Publisher place: Rio de Janeiro
- Date published: 2003
- Source:
- Título do periódico: Programa e Libro de Resumos
- Conference titles: Encontro da Sociedade Brasileira de Pesquisa em Materiais
-
ABNT
PACHECO-SALAZAR, D G et al. Improving of the p-type doping by carbon in cubic GaN samples under Ga-rich growth conditions. 2003, Anais.. Rio de Janeiro: SBPMat, 2003. . Acesso em: 21 jul. 2024. -
APA
Pacheco-Salazar, D. G., Leite, J. R., As, D. J., Potthast, A., & Lischka, K. (2003). Improving of the p-type doping by carbon in cubic GaN samples under Ga-rich growth conditions. In Programa e Libro de Resumos. Rio de Janeiro: SBPMat. -
NLM
Pacheco-Salazar DG, Leite JR, As DJ, Potthast A, Lischka K. Improving of the p-type doping by carbon in cubic GaN samples under Ga-rich growth conditions. Programa e Libro de Resumos. 2003 ;[citado 2024 jul. 21 ] -
Vancouver
Pacheco-Salazar DG, Leite JR, As DJ, Potthast A, Lischka K. Improving of the p-type doping by carbon in cubic GaN samples under Ga-rich growth conditions. Programa e Libro de Resumos. 2003 ;[citado 2024 jul. 21 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
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