Photoluminescence of cubic GaN/GaAs (100) grown by RF-MBE (2001)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Subjects: SEMICONDUTORES; EFEITO MOSSBAUER
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
MARQUEZ, A M O de Zevallos et al. Photoluminescence of cubic GaN/GaAs (100) grown by RF-MBE. 2001, Anais.. São Paulo: SBF, 2001. . Acesso em: 11 nov. 2024. -
APA
Marquez, A. M. O. de Z., Noriega, O. C., Leite, J. R., Tabata, A., Meneses, E., As, D. J., et al. (2001). Photoluminescence of cubic GaN/GaAs (100) grown by RF-MBE. In Resumos. São Paulo: SBF. -
NLM
Marquez AMO de Z, Noriega OC, Leite JR, Tabata A, Meneses E, As DJ, Schickora D, Lischka K. Photoluminescence of cubic GaN/GaAs (100) grown by RF-MBE. Resumos. 2001 ;[citado 2024 nov. 11 ] -
Vancouver
Marquez AMO de Z, Noriega OC, Leite JR, Tabata A, Meneses E, As DJ, Schickora D, Lischka K. Photoluminescence of cubic GaN/GaAs (100) grown by RF-MBE. Resumos. 2001 ;[citado 2024 nov. 11 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
- Current research on semiconductor physics
- Hydrogen passivation of shallow acceptor levels in crystalline silicon
- Estrutura eletronica do semicondutor diamante tipo p
- Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy
- Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics
- Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium
- Deep levels induced by 3d transition metal impurities in diamond
- Native surface defects at low-index reconstructed cubic GaN surfaces
- Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
