Stress-related effects on the C-V characteristics of pseudomorphic MODFETs (1998)
- Authors:
- USP affiliated authors: ROMERO, MURILO ARAUJO - EESC ; HIPOLITO, OSCAR - IFSC
- Unidades: EESC; IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Proceedings
- Conference titles: European Solid-State Device Research Conference
-
ABNT
MANZOLI, J E e ROMERO, Murilo Araujo e HIPÓLITO, Oscar. Stress-related effects on the C-V characteristics of pseudomorphic MODFETs. 1998, Anais.. Bordeaux: Escola de Engenharia de São Carlos, Universidade de São Paulo, 1998. . Acesso em: 21 mar. 2026. -
APA
Manzoli, J. E., Romero, M. A., & Hipólito, O. (1998). Stress-related effects on the C-V characteristics of pseudomorphic MODFETs. In Proceedings. Bordeaux: Escola de Engenharia de São Carlos, Universidade de São Paulo. -
NLM
Manzoli JE, Romero MA, Hipólito O. Stress-related effects on the C-V characteristics of pseudomorphic MODFETs. Proceedings. 1998 ;[citado 2026 mar. 21 ] -
Vancouver
Manzoli JE, Romero MA, Hipólito O. Stress-related effects on the C-V characteristics of pseudomorphic MODFETs. Proceedings. 1998 ;[citado 2026 mar. 21 ] - On the capacitance-voltage modeling of strained quantum-well MODFET´s
- Características e estrutura eletrônica de HEMT pseudomórfica (presença de strain e canal 'delta' dopado)
- Self-consistent modeling of C-V and electronic properties of strained heterostructure MODFETs
- Characteristics and electronic structure of pHEMT/InP (presence of strain and 'delta'-doped channel.)
- Ivc of a double tunnel junction in the coulomb blockade mode
- Magnetopolarons in quantum dots: comparison of polaronic effects from three to quasi-zero dimensions
- Impurity density of states in n-type 'SI' inversion layers
- Density of states of hydrogenic impurities in 'GA''AS' / 'GA''AL''AS' quantum wires
- Ground-and excited-state impurity bands in silicon inversion layers
- Shallow donor impurity in quantum wire in the presence of a magnetic field
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
