Ground-and excited-state impurity bands in silicon inversion layers (1993)
- Authors:
- Autor USP: HIPOLITO, OSCAR - IFQSC
- Unidade: IFQSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Usp/Ufscar
- Publisher place: Sao Carlos
- Date published: 1993
- Source:
- Título do periódico: Abstracts
- Conference titles: Brazilian School of Semiconductor Physics
-
ABNT
HIPÓLITO, Oscar e SILVA, A. F. Ground-and excited-state impurity bands in silicon inversion layers. 1993, Anais.. Sao Carlos: Usp/Ufscar, 1993. . Acesso em: 24 abr. 2024. -
APA
Hipólito, O., & Silva, A. F. (1993). Ground-and excited-state impurity bands in silicon inversion layers. In Abstracts. Sao Carlos: Usp/Ufscar. -
NLM
Hipólito O, Silva AF. Ground-and excited-state impurity bands in silicon inversion layers. Abstracts. 1993 ;[citado 2024 abr. 24 ] -
Vancouver
Hipólito O, Silva AF. Ground-and excited-state impurity bands in silicon inversion layers. Abstracts. 1993 ;[citado 2024 abr. 24 ] - Density of states of on-axis hydrogenic impurities in a 'GA''AS' / 'GA''AL''AS' quantum-well wire of circular cross section
- Espectro de perda de energia de eletrons de um sistema semicondutor de dupla camada
- Impurity-bound magnetopolaron in 'GA''AS' quantum well structures
- Shallow donor impurity in quantum wire in the presence of a magnetic field
- Ground- and excited-state impurity bands in silicon inversion layers
- Magnetic field effects on impurity states in quantum dots
- Surface electrons on helium film
- Numerical simulation of electronic behavior in a finite superlattice with a tamm state: a possible submillimeter wave emitter without optical pumping
- Electron correlation effects in screened hydrogenic impurity states in many-valley semiconductors
- Interacao de particulas carregadas com a superficie de um material semi-infinito
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