Ground-and excited-state impurity bands in silicon inversion layers (1993)
- Authors:
- Autor USP: HIPOLITO, OSCAR - IFQSC
- Unidade: IFQSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Usp/Ufscar
- Publisher place: Sao Carlos
- Date published: 1993
- Source:
- Título: Abstracts
- Conference titles: Brazilian School of Semiconductor Physics
-
ABNT
HIPÓLITO, Oscar e SILVA, A. F. Ground-and excited-state impurity bands in silicon inversion layers. 1993, Anais.. Sao Carlos: Usp/Ufscar, 1993. . Acesso em: 27 fev. 2026. -
APA
Hipólito, O., & Silva, A. F. (1993). Ground-and excited-state impurity bands in silicon inversion layers. In Abstracts. Sao Carlos: Usp/Ufscar. -
NLM
Hipólito O, Silva AF. Ground-and excited-state impurity bands in silicon inversion layers. Abstracts. 1993 ;[citado 2026 fev. 27 ] -
Vancouver
Hipólito O, Silva AF. Ground-and excited-state impurity bands in silicon inversion layers. Abstracts. 1993 ;[citado 2026 fev. 27 ] - Ivc of a double tunnel junction in the coulomb blockade mode
- Magnetopolarons in quantum dots: comparison of polaronic effects from three to quasi-zero dimensions
- Impurity density of states in n-type 'SI' inversion layers
- Density of states of hydrogenic impurities in 'GA''AS' / 'GA''AL''AS' quantum wires
- Shallow donor impurity in quantum wire in the presence of a magnetic field
- Recuperar a escola pública
- Dinamica de pacotes de onda em fios quanticos duplos assimetricos acoplados
- Modelo teorico de fio quantico
- Current-voltage characteristic of a double tunnel junction under coulomb-blockade conditions
- Effects of confinement on shallow impurities in 'GA''AS'-'GA' / sub 1-x / 'AL' / sub x / 'AS' quantum dots
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