Characteristics and electronic structure of pHEMT/InP (presence of strain and 'delta'-doped channel.) (1997)
- Authors:
- USP affiliated authors: ROMERO, MURILO ARAUJO - EESC ; HIPOLITO, OSCAR - IFSC
- Unidades: EESC; IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: University of Nebraska
- Publisher place: Lincoln
- Date published: 1997
- Source:
- Título: Abstracts
- Conference titles: International Conference on Superlattices, Microructures, and Microdevices
-
ABNT
MANZOLI, José Eduardo e ROMERO, Murilo Araujo e HIPÓLITO, Oscar. Characteristics and electronic structure of pHEMT/InP (presence of strain and 'delta'-doped channel.). 1997, Anais.. Lincoln: University of Nebraska, 1997. . Acesso em: 26 jan. 2026. -
APA
Manzoli, J. E., Romero, M. A., & Hipólito, O. (1997). Characteristics and electronic structure of pHEMT/InP (presence of strain and 'delta'-doped channel.). In Abstracts. Lincoln: University of Nebraska. -
NLM
Manzoli JE, Romero MA, Hipólito O. Characteristics and electronic structure of pHEMT/InP (presence of strain and 'delta'-doped channel.). Abstracts. 1997 ;[citado 2026 jan. 26 ] -
Vancouver
Manzoli JE, Romero MA, Hipólito O. Characteristics and electronic structure of pHEMT/InP (presence of strain and 'delta'-doped channel.). Abstracts. 1997 ;[citado 2026 jan. 26 ] - Self-consistent modeling of C-V and electronic properties of strained heterostructure MODFETs
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- Estudo da eficiência de apagamento de portadora em RSOAs em rede de remodulação óptica
- Enhancement of maximum reach on spectrum-sliced ASE systems employing self-seeded reflective-SOAs transmitters
- Transistores de alta mobilidade eletrônica (HEMTs): princípios de operação e características eletrônicas
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