Electron-optical-phonon interaction effect on the intradonor transition energies in doped GaAs-'Al IND.X''Ga IND.1-X' quantum wells (1998)
- Authors:
- Autor USP: HIPOLITO, OSCAR - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Physical Review B
- Volume/Número/Paginação/Ano: v. 57, n. 3, p. 1644-1648, 1998
-
ABNT
OSÓRIO, Francisco Aparecido Pinto e MAIALLE, Marcelo Zoega e HIPÓLITO, Oscar. Electron-optical-phonon interaction effect on the intradonor transition energies in doped GaAs-'Al IND.X''Ga IND.1-X' quantum wells. Physical Review B, v. 57, n. 3, p. 1644-1648, 1998Tradução . . Acesso em: 23 abr. 2024. -
APA
Osório, F. A. P., Maialle, M. Z., & Hipólito, O. (1998). Electron-optical-phonon interaction effect on the intradonor transition energies in doped GaAs-'Al IND.X''Ga IND.1-X' quantum wells. Physical Review B, 57( 3), 1644-1648. -
NLM
Osório FAP, Maialle MZ, Hipólito O. Electron-optical-phonon interaction effect on the intradonor transition energies in doped GaAs-'Al IND.X''Ga IND.1-X' quantum wells. Physical Review B. 1998 ; 57( 3): 1644-1648.[citado 2024 abr. 23 ] -
Vancouver
Osório FAP, Maialle MZ, Hipólito O. Electron-optical-phonon interaction effect on the intradonor transition energies in doped GaAs-'Al IND.X''Ga IND.1-X' quantum wells. Physical Review B. 1998 ; 57( 3): 1644-1648.[citado 2024 abr. 23 ] - Density of states of on-axis hydrogenic impurities in a 'GA''AS' / 'GA''AL''AS' quantum-well wire of circular cross section
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