Ground- and excited-state impurity bands in silicon inversion layers (1994)
- Authors:
- USP affiliated author: HIPOLITO, OSCAR - IFSC
- School: IFSC
- Subject: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Brazilian Journal of Physics
- Volume/Número/Paginação/Ano: v.24, n.1 , p.399-401, mar. 1994
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ABNT
HIPÓLITO, Oscar; SILVA, A. F. Ground- and excited-state impurity bands in silicon inversion layers. Brazilian Journal of Physics, São Paulo, v. 24, n. 1 , p. 399-401, 1994. -
APA
Hipólito, O., & Silva, A. F. (1994). Ground- and excited-state impurity bands in silicon inversion layers. Brazilian Journal of Physics, 24( 1 ), 399-401. -
NLM
Hipólito O, Silva AF. Ground- and excited-state impurity bands in silicon inversion layers. Brazilian Journal of Physics. 1994 ;24( 1 ): 399-401. -
Vancouver
Hipólito O, Silva AF. Ground- and excited-state impurity bands in silicon inversion layers. Brazilian Journal of Physics. 1994 ;24( 1 ): 399-401. - Numerical simulation of electronic behavior in a finite superlattice with a tamm state: a possible submillimeter wave emitter without optical pumping
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- Electron correlation effects in screened hydrogenic impurity states in many-valley semiconductors
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- Interacao de particulas carregadas com a superficie de um material semi-infinito
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