Mbe growth and characterization of iii-v related heterostructures at the physics institute, sao paulo university (1995)
- Autor:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Fisica
- Publisher place: São Paulo
- Date published: 1995
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
-
ABNT
LEITE, J. R. Mbe growth and characterization of iii-v related heterostructures at the physics institute, sao paulo university. 1995, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1995. . Acesso em: 10 out. 2024. -
APA
Leite, J. R. (1995). Mbe growth and characterization of iii-v related heterostructures at the physics institute, sao paulo university. In Resumos. São Paulo: Sociedade Brasileira de Fisica. -
NLM
Leite JR. Mbe growth and characterization of iii-v related heterostructures at the physics institute, sao paulo university. Resumos. 1995 ;[citado 2024 out. 10 ] -
Vancouver
Leite JR. Mbe growth and characterization of iii-v related heterostructures at the physics institute, sao paulo university. Resumos. 1995 ;[citado 2024 out. 10 ] - Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
- Current research on semiconductor physics
- Hydrogen passivation of shallow acceptor levels in crystalline silicon
- Estrutura eletronica do semicondutor diamante tipo p
- Dangling bonds reconstruction effects on the formation entropy of a silicon vacancy
- Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics
- Self-consistent one-electron states of substitutional and interstitial 3d transition-atom impurities in diamond and germanium
- Deep levels induced by 3d transition metal impurities in diamond
- Native surface defects at low-index reconstructed cubic GaN surfaces
- Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
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