Tunneling spectroscopy and miniband structure of selenium delta-doped 'GA''AS' (1992)
- Authors:
- USP affiliated authors: HIPOLITO, OSCAR - IFSC ; IORIATTI JUNIOR, LIDERIO CITRANGULO - IFSC ; BASMAJI, PIERRE - IFSC ; DEGANI, MARCOS HENRIQUE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
- Language: Inglês
- Imprenta:
- Source:
- Título: Surface Science
- Volume/Número/Paginação/Ano: v.263, p.231-3, 1992
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ABNT
BASMAJI, Pierre et al. Tunneling spectroscopy and miniband structure of selenium delta-doped 'GA''AS'. Surface Science, v. 263, p. 231-3, 1992Tradução . . Acesso em: 04 ago. 2025. -
APA
Basmaji, P., Notari, A. C., Schrappe, B., Degani, M. H., Ioriatti Júnior, L. C., & Hipólito, O. (1992). Tunneling spectroscopy and miniband structure of selenium delta-doped 'GA''AS'. Surface Science, 263, 231-3. -
NLM
Basmaji P, Notari AC, Schrappe B, Degani MH, Ioriatti Júnior LC, Hipólito O. Tunneling spectroscopy and miniband structure of selenium delta-doped 'GA''AS'. Surface Science. 1992 ;263 231-3.[citado 2025 ago. 04 ] -
Vancouver
Basmaji P, Notari AC, Schrappe B, Degani MH, Ioriatti Júnior LC, Hipólito O. Tunneling spectroscopy and miniband structure of selenium delta-doped 'GA''AS'. Surface Science. 1992 ;263 231-3.[citado 2025 ago. 04 ] - Tunneling spectroscopy and miniband structure of selenium 'delta'-doped 'GA''AS'
- Excitacoes coletivas em estruturas semicondutoras quasi-unidimensionais
- IR emission by charge oscilattion in semiconductor heterostructures
- Polaron effects on excitons in GaAs-'Ga IND.1-x''Al IND.X'As quantum wells
- Electron-phonon effects on the ground impurity level in quasi-one-dimensional semiconductor heterostructures
- The polaronic state of a multi-electron dimple on the liquid helium film
- Impurity-shifted polaron energy in semimagnetic 'CD IND.1-X''MN IND.X' 'TE'-'CD''TE' quantum wells (pt.Ii)
- Temperature dependence of the polaron mass in a 'GA''AS'-'GA IND.1-X''AL IND.X''AS' quantum-well wire
- Excitation binding energy in 'GA''AS' - 'GA IND.1-X''AL IND.X' as quantum wells
- Modification of the electron-phonon interactions in gaas-gaalas heterojunctions
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