IR emission by charge oscilattion in semiconductor heterostructures (1994)
- Authors:
- USP affiliated authors: DEGANI, MARCOS HENRIQUE - IFSC ; HIPOLITO, OSCAR - IFSC
- Unidade: IFSC
- Subjects: SEMICONDUTORES; RADIAÇÃO (ENERGIA RADIANTE)
- Language: Português
- Imprenta:
- Publisher: IFSC - USP
- Publisher place: Sao Carlos
- Date published: 1994
- Source:
- Título: Resumos
- Volume/Número/Paginação/Ano: São Carlos : IFSC - USP, 1994
- Conference titles: Simposio Estadual de Lasers e Aplicações
-
ABNT
MANZOLI, J. E. e DEGANI, Marcos Henrique e HIPÓLITO, Oscar. IR emission by charge oscilattion in semiconductor heterostructures. 1994, Anais.. Sao Carlos: IFSC - USP, 1994. . Acesso em: 08 out. 2024. -
APA
Manzoli, J. E., Degani, M. H., & Hipólito, O. (1994). IR emission by charge oscilattion in semiconductor heterostructures. In Resumos. Sao Carlos: IFSC - USP. -
NLM
Manzoli JE, Degani MH, Hipólito O. IR emission by charge oscilattion in semiconductor heterostructures. Resumos. 1994 ;[citado 2024 out. 08 ] -
Vancouver
Manzoli JE, Degani MH, Hipólito O. IR emission by charge oscilattion in semiconductor heterostructures. Resumos. 1994 ;[citado 2024 out. 08 ] - Electron-phonon effects on the ground impurity level in quasi-one-dimensional semiconductor heterostructures
- The polaronic state of a multi-electron dimple on the liquid helium film
- Impurity-shifted polaron energy in semimagnetic 'CD IND.1-X''MN IND.X' 'TE'-'CD''TE' quantum wells (pt.Ii)
- Temperature dependence of the polaron mass in a 'GA''AS'-'GA IND.1-X''AL IND.X''AS' quantum-well wire
- Excitation binding energy in 'GA''AS' - 'GA IND.1-X''AL IND.X' as quantum wells
- Polaron effects on excitons in GaAs-'Ga IND.1-x''Al IND.X'As quantum wells
- Modification of the electron-phonon interactions in gaas-gaalas heterojunctions
- Cyclotron resonance of interface polarons in semiconductor heterostructures
- Exchange and correlations effects in a semiconductor quantum-well wire
- Electron-phonon interaction effects in a quasi-two-dimensional electron 'GAS' in 'GA''AS'-'GA IND. 1-X''A1 IND. X' 'AS' heterostructure
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