ReP USP - Resultado da busca

Trabalho de evento
Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure (2004)
Toquetti, Leandro Zeidan; Santos Filho, Sebastião Gomes dos ; Diniz, José A.; Swart, Jacobus Willibrordus
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, POLÍMEROS (MATERIAIS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TOQUETTI, Leandro Zeidan et al. Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 18 nov. 2025.
APA
Toquetti, L. Z., Santos Filho, S. G. dos, Diniz, J. A., & Swart, J. W. (2004). Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Toquetti LZ, Santos Filho SG dos, Diniz JA, Swart JW. Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 18 ]
Vancouver
Toquetti LZ, Santos Filho SG dos, Diniz JA, Swart JW. Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 18 ]
Trabalho de evento
Formation and stability of Ni(Pt)Si/Poly-Si layered structure (2004)
Santos, Regis E.; Doi, Ioshiaki; Teixeira, Ricardo C.; Diniz, José A.; Swart, Jacobus Willibrordus; Santos Filho, Sebastião Gomes dos
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS, ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Regis E. et al. Formation and stability of Ni(Pt)Si/Poly-Si layered structure. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 18 nov. 2025.
APA
Santos, R. E., Doi, I., Teixeira, R. C., Diniz, J. A., Swart, J. W., & Santos Filho, S. G. dos. (2004). Formation and stability of Ni(Pt)Si/Poly-Si layered structure. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Santos RE, Doi I, Teixeira RC, Diniz JA, Swart JW, Santos Filho SG dos. Formation and stability of Ni(Pt)Si/Poly-Si layered structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 18 ]
Vancouver
Santos RE, Doi I, Teixeira RC, Diniz JA, Swart JW, Santos Filho SG dos. Formation and stability of Ni(Pt)Si/Poly-Si layered structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 18 ]
Trabalho de evento
Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system (2004)
Teixeira, Ricardo C.; Doi, Ioshiaki; Swart, Jacobus Willibrordus; Zakia, M. B. P.; Santos Filho, Sebastião Gomes dos
Fonte: Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, POLÍMEROS (MATERIAIS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TEIXEIRA, Ricardo C. et al. Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 18 nov. 2025.
APA
Teixeira, R. C., Doi, I., Swart, J. W., Zakia, M. B. P., & Santos Filho, S. G. dos. (2004). Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. In Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Teixeira RC, Doi I, Swart JW, Zakia MBP, Santos Filho SG dos. Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 18 ]
Vancouver
Teixeira RC, Doi I, Swart JW, Zakia MBP, Santos Filho SG dos. Characteristics of polymcrystalline SI1-xGEx alloy deposited in a vertical LPCVD system. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 18 ]
Trabalho de evento
Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer (2004)
Reis, Ronaldo Willian; Santos Filho, Sebastião Gomes dos ; Doi, Ioshiaki; Swart, Jacobus Willibrordus
Fonte: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
REIS, Ronaldo Willian et al. Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 18 nov. 2025.
APA
Reis, R. W., Santos Filho, S. G. dos, Doi, I., & Swart, J. W. (2004). Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 18 ]
Vancouver
Reis RW, Santos Filho SG dos, Doi I, Swart JW. Formation of nickel silicides onto AS-doped silicon using a thin Pt/Pd interlayer. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 18 ]
Trabalho de evento
The influence of the AC component of the plasma potential on the measurement of the ion flux (2004)
Swart, Jacobus Willibrordus; Verdonck, Patrick Bernard
Fonte: Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SWART, Jacobus Willibrordus e VERDONCK, Patrick Bernard. The influence of the AC component of the plasma potential on the measurement of the ion flux. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 18 nov. 2025.
APA
Swart, J. W., & Verdonck, P. B. (2004). The influence of the AC component of the plasma potential on the measurement of the ion flux. In Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.
NLM
Swart JW, Verdonck PB. The influence of the AC component of the plasma potential on the measurement of the ion flux. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 18 ]
Vancouver
Swart JW, Verdonck PB. The influence of the AC component of the plasma potential on the measurement of the ion flux. Microelectronics Technology and Devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2025 nov. 18 ]

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