Pavanello, Marcelo Antonio 
; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Microelectronics Technology and Devices SBMICRO 2005. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAVANELLO, Marcelo Antonio et al. Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 15 nov. 2025.APA
Pavanello, M. A., Martino, J. A., Simoen, E., & Claeys, C. (2005). Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.NLM
Pavanello MA, Martino JA, Simoen E, Claeys C. Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]Vancouver
Pavanello MA, Martino JA, Simoen E, Claeys C. Comparison between bulk and floating body partially depleted SOI nMOSFETs for high frequency analog applications operating from 300 K down to 95 K. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
