ReP USP - Resultado da busca

Parte de monografia/livro
Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs (2003)
Almeida, Galba Falce de; Nicolett, Aparecido Sirley; Martino, João Antonio
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALMEIDA, Galba Falce de e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Almeida, G. F. de, Nicolett, A. S., & Martino, J. A. (2003). Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Almeida GF de, Nicolett AS, Martino JA. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Almeida GF de, Nicolett AS, Martino JA. Study of series resistance and effective channel length behavior comparing graded-channel and conventional SOI nMOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
An improved current model for edgeless SOI MOSFETs (2003)
Giacomini, Renato Camargo; Martino, João Antonio
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. An improved current model for edgeless SOI MOSFETs. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Giacomini, R. C., & Martino, J. A. (2003). An improved current model for edgeless SOI MOSFETs. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Giacomini RC, Martino JA. An improved current model for edgeless SOI MOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Giacomini RC, Martino JA. An improved current model for edgeless SOI MOSFETs. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C (2003)
Bellodi, Marcello; Martino, João Antonio
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Bellodi, M., & Martino, J. A. (2003). Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Bellodi M, Martino JA. Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Bellodi M, Martino JA. Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Parte de monografia/livro
The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C (2003)
Bellodi, Marcello; Martino, João Antonio
Fonte: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.
APA
Bellodi, M., & Martino, J. A. (2003). The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Bellodi M, Martino JA. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
Vancouver
Bellodi M, Martino JA. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]

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