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Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs (2005)
Galeti, Milene; Claeys, Cor ; Martino, João Antonio ; Simoen, Eddy
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GALETI, Milene et al. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 15 nov. 2025.
APA
Galeti, M., Claeys, C., Martino, J. A., & Simoen, E. (2005). Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Galeti M, Claeys C, Martino JA, Simoen E. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Vancouver
Galeti M, Claeys C, Martino JA, Simoen E. Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Parte de monografia/livro
Analysis on GC SOI MOSFET analog parameters at high temperatures (2003)
Galeti, Milene; Pavanello, Marcelo Antonio ; Martino, João Antonio
Fonte: Microelectronic Technology and Devices SBMicro 2003. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GALETI, Milene e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Analysis on GC SOI MOSFET analog parameters at high temperatures. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 15 nov. 2025.
APA
Galeti, M., Pavanello, M. A., & Martino, J. A. (2003). Analysis on GC SOI MOSFET analog parameters at high temperatures. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.
NLM
Galeti M, Pavanello MA, Martino JA. Analysis on GC SOI MOSFET analog parameters at high temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 15 ]
Vancouver
Galeti M, Pavanello MA, Martino JA. Analysis on GC SOI MOSFET analog parameters at high temperatures. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 15 ]
Parte de monografia/livro
Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures (2002)
Galeti, Milene; Pavanello, Marcelo Antonio ; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GALETI, Milene e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 15 nov. 2025.
APA
Galeti, M., Pavanello, M. A., & Martino, J. A. (2002). Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Galeti M, Pavanello MA, Martino JA. Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 15 ]
Vancouver
Galeti M, Pavanello MA, Martino JA. Behavior of graded-channel fully depleted SOI NMOSFET at high temperatures. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 15 ]

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