ReP USP - Resultado da busca

Trabalho de evento
Improved density of states and effective charge density in SI/PECVD Si/OxNy interface (2008)
Albertin, Katia Franklin ; Pereyra, Inés
Fonte: SBMICRO 2008: Anais. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALBERTIN, Katia Franklin e PEREYRA, Inés. Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 16 nov. 2025.
APA
Albertin, K. F., & Pereyra, I. (2008). Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Albertin KF, Pereyra I. Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 16 ]
Vancouver
Albertin KF, Pereyra I. Improved density of states and effective charge density in SI/PECVD Si/OxNy interface. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 16 ]
Trabalho de evento
Study of MOS capacitors with annealed TiO2 gate dielectric layer (2007)
Albertin, Katia Franklin ; Valle, Marcio A; Pereyra, Inés
Fonte: SBMicro 2007. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALBERTIN, Katia Franklin e VALLE, Marcio A e PEREYRA, Inés. Study of MOS capacitors with annealed TiO2 gate dielectric layer. 2007, Anais.. Pennington: The Electrochemical Society, 2007. Disponível em: https://doi.org/10.1149/1.2766918. Acesso em: 16 nov. 2025.
APA
Albertin, K. F., Valle, M. A., & Pereyra, I. (2007). Study of MOS capacitors with annealed TiO2 gate dielectric layer. In SBMicro 2007. Pennington: The Electrochemical Society. doi:10.1149/1.2766918
NLM
Albertin KF, Valle MA, Pereyra I. Study of MOS capacitors with annealed TiO2 gate dielectric layer [Internet]. SBMicro 2007. 2007 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1149/1.2766918
Vancouver
Albertin KF, Valle MA, Pereyra I. Study of MOS capacitors with annealed TiO2 gate dielectric layer [Internet]. SBMicro 2007. 2007 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1149/1.2766918
Trabalho de evento
Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication (2005)
Garcia, B.; Estrada, M.; Albertin, Katia Franklin ; Páez Carreño, Marcelo Nelson
Fonte: Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GARCIA, B. et al. Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 16 nov. 2025.
APA
Garcia, B., Estrada, M., Albertin, K. F., & Páez Carreño, M. N. (2005). Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication. In Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Garcia B, Estrada M, Albertin KF, Páez Carreño MN. Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 16 ]
Vancouver
Garcia B, Estrada M, Albertin KF, Páez Carreño MN. Polycrystallization of a-SiC:H layers by excimer laser annealing for TFT fabrication. Proceedings v. 2005-08. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 16 ]

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