Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy (1995)
Fonte: Scientific Program and Abstracts. Nome do evento: Simposio Latino-Americano de Fisica do Estado Solido. Unidade: IFSC
Assuntos: MATÉRIA CONDENSADA, SEMICONDUTORES
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LUBYSHEV, D I et al. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. 1995, Anais.. Porto Alegre: Ufrgs, 1995. . Acesso em: 28 nov. 2025.APA
Lubyshev, D. I., Preobrazhenskii, V. V., Semyagin, B. R., Lubysheva, T. B., La Scala Junior, N., & Basmaji, P. (1995). Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. In Scientific Program and Abstracts. Porto Alegre: Ufrgs.NLM
Lubyshev DI, Preobrazhenskii VV, Semyagin BR, Lubysheva TB, La Scala Junior N, Basmaji P. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. Scientific Program and Abstracts. 1995 ;[citado 2025 nov. 28 ]Vancouver
Lubyshev DI, Preobrazhenskii VV, Semyagin BR, Lubysheva TB, La Scala Junior N, Basmaji P. Growth and transport properties of 'IN''SB' on 'GA''AS' by molecular beam epitaxy. Scientific Program and Abstracts. 1995 ;[citado 2025 nov. 28 ]
