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Filtros : "Journal of Integrated Circuits and Systems" "AGOPIAN, PAULA GHEDINI DER" Limpar

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  • Artigo de periodico

    Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs (2014)

    Teixeira, Fernando Ferrari; Martino, João Antonio ; Bordallo, Caio Cesar Mendes ; Silveira, Marcilei Aparecida Guazzelli da; Agopian, Paula Ghedini Der ; Simoen, Eddy ; Claeys, Cor

    Source: Journal of Integrated Circuits and Systems. Unidade: EP

    Subjects: MICROELETRÔNICA, RAIOS X

    Acesso à fonteAcesso à fonteDOIHow to cite
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    • ABNT

      TEIXEIRA, Fernando Ferrari et al. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs. Journal of Integrated Circuits and Systems, v. 9, n. 2, p. 97-102, 2014Tradução . . Disponível em: https://doi.org/10.29292/jics.v9i2.394. Acesso em: 15 nov. 2025.

    • APA

      Teixeira, F. F., Martino, J. A., Bordallo, C. C. M., Silveira, M. A. G. da, Agopian, P. G. D., Simoen, E., & Claeys, C. (2014). Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs. Journal of Integrated Circuits and Systems, 9( 2), 97-102. doi:10.29292/jics.v9i2.394

    • NLM

      Teixeira FF, Martino JA, Bordallo CCM, Silveira MAG da, Agopian PGD, Simoen E, Claeys C. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 97-102.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v9i2.394

    • Vancouver

      Teixeira FF, Martino JA, Bordallo CCM, Silveira MAG da, Agopian PGD, Simoen E, Claeys C. Parasitic conduction response to X-ray radiation in unstrained and strained triple-gate SOI MuGFETs [Internet]. Journal of Integrated Circuits and Systems. 2014 ; 9( 2): 97-102.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v9i2.394

  • Artigo de periodico

    Nanowire Tunnel Field Effect Transistors at High Temperature (2013)

    Martino, Márcio Dalla Valle; Neves, Felipe Souza; Agopian, Paula Ghedini Der ; Martino, João Antonio ; Rooyackers, Rita; Claeys, Cor

    Source: Journal of Integrated Circuits and Systems. Unidade: EP

    Assunto: NANOELETRÔNICA

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    • ABNT

      MARTINO, Márcio Dalla Valle et al. Nanowire Tunnel Field Effect Transistors at High Temperature. Journal of Integrated Circuits and Systems, v. 8, n. 2, p. 110-115, 2013Tradução . . Disponível em: https://doi.org/10.29292/jics.v8i2.381. Acesso em: 15 nov. 2025.

    • APA

      Martino, M. D. V., Neves, F. S., Agopian, P. G. D., Martino, J. A., Rooyackers, R., & Claeys, C. (2013). Nanowire Tunnel Field Effect Transistors at High Temperature. Journal of Integrated Circuits and Systems, 8( 2), 110-115. doi:10.29292/jics.v8i2.381

    • NLM

      Martino MDV, Neves FS, Agopian PGD, Martino JA, Rooyackers R, Claeys C. Nanowire Tunnel Field Effect Transistors at High Temperature [Internet]. Journal of Integrated Circuits and Systems. 2013 ;8( 2): 110-115.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v8i2.381

    • Vancouver

      Martino MDV, Neves FS, Agopian PGD, Martino JA, Rooyackers R, Claeys C. Nanowire Tunnel Field Effect Transistors at High Temperature [Internet]. Journal of Integrated Circuits and Systems. 2013 ;8( 2): 110-115.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v8i2.381
  • 1

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