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Artigo de periodico
The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs (2017)
Bordallo, Caio Cesar Mendes ; Collaert, Nadine ; Claeys, Cor ; Simoen, Eddy ; Vandooren, A; Rooyackers, Rita; Mols, Yannick; Alian, A; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: MICROELETRÔNICA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BORDALLO, Caio Cesar Mendes et al. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs. IEEE Transactions on Electron Devices, v. 64, n. 9, p. 3595-3600, 2017Tradução . . Disponível em: https://doi.org/10.1109/ted.2017.2721110. Acesso em: 17 nov. 2025.
APA
Bordallo, C. C. M., Collaert, N., Claeys, C., Simoen, E., Vandooren, A., Rooyackers, R., et al. (2017). The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs. IEEE Transactions on Electron Devices, 64( 9), 3595-3600. doi:10.1109/ted.2017.2721110
NLM
Bordallo CCM, Collaert N, Claeys C, Simoen E, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs [Internet]. IEEE Transactions on Electron Devices. 2017 ; 64( 9): 3595-3600.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2017.2721110
Vancouver
Bordallo CCM, Collaert N, Claeys C, Simoen E, Vandooren A, Rooyackers R, Mols Y, Alian A, Agopian PGD, Martino JA. The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs [Internet]. IEEE Transactions on Electron Devices. 2017 ; 64( 9): 3595-3600.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2017.2721110
Artigo de periodico
Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source (2016)
Neves, Felipe S; Agopian, Paula Ghedini Der ; Cretu, B; Rooyackers, Rita; Vandooren, A; Simoen, Eddy ; Thean, Aaron; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NEVES, Felipe S et al. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Transactions on Electron Devices, v. 63, n. 4, p. 1658-1665, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2533360. Acesso em: 17 nov. 2025.
APA
Neves, F. S., Agopian, P. G. D., Cretu, B., Rooyackers, R., Vandooren, A., Simoen, E., et al. (2016). Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Transactions on Electron Devices, 63( 4), 1658-1665. doi:10.1109/ted.2016.2533360
NLM
Neves FS, Agopian PGD, Cretu B, Rooyackers R, Vandooren A, Simoen E, Thean A, Martino JA. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 4): 1658-1665.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2016.2533360
Vancouver
Neves FS, Agopian PGD, Cretu B, Rooyackers R, Vandooren A, Simoen E, Thean A, Martino JA. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 4): 1658-1665.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2016.2533360
Artigo de periodico
Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices (2005)
Pereira, Regiane Aparecida Ragi; Romero, Murilo Araujo ; Nabet, Bahram
Source: IEEE Transactions on Electron Devices. Unidade: EESC
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PEREIRA, Regiane Aparecida Ragi e ROMERO, Murilo Araujo e NABET, Bahram. Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices. IEEE Transactions on Electron Devices, v. 52, n. 2, p. 170-175, 2005Tradução . . Disponível em: http://ieeexplore.ieee.org/iel5/16/30185/01386584.pdf?isnumber=30185&prod=JNL&arnumber=1386584&arSt=+170&ared=+175&arAuthor=Ragi%2C+R.%3B+Romero%2C+M.A.%3B+Nabet%2C+B. Acesso em: 17 nov. 2025.
APA
Pereira, R. A. R., Romero, M. A., & Nabet, B. (2005). Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices. IEEE Transactions on Electron Devices, 52( 2), 170-175. Recuperado de http://ieeexplore.ieee.org/iel5/16/30185/01386584.pdf?isnumber=30185&prod=JNL&arnumber=1386584&arSt=+170&ared=+175&arAuthor=Ragi%2C+R.%3B+Romero%2C+M.A.%3B+Nabet%2C+B.
NLM
Pereira RAR, Romero MA, Nabet B. Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices [Internet]. IEEE Transactions on Electron Devices. 2005 ; 52( 2): 170-175.[citado 2025 nov. 17 ] Available from: http://ieeexplore.ieee.org/iel5/16/30185/01386584.pdf?isnumber=30185&prod=JNL&arnumber=1386584&arSt=+170&ared=+175&arAuthor=Ragi%2C+R.%3B+Romero%2C+M.A.%3B+Nabet%2C+B.
Vancouver
Pereira RAR, Romero MA, Nabet B. Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices [Internet]. IEEE Transactions on Electron Devices. 2005 ; 52( 2): 170-175.[citado 2025 nov. 17 ] Available from: http://ieeexplore.ieee.org/iel5/16/30185/01386584.pdf?isnumber=30185&prod=JNL&arnumber=1386584&arSt=+170&ared=+175&arAuthor=Ragi%2C+R.%3B+Romero%2C+M.A.%3B+Nabet%2C+B.

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