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Filtros : "Microelectronic Technology and Devices SBMicro 2003" "Bellodi, Marcello" Limpar

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  • Parte de monografia/livro

    Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C (2003)

    Bellodi, Marcello; Martino, João Antonio

    Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP

    Assunto: MICROELETRÔNICA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      BELLODI, Marcello e MARTINO, João Antonio. Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.

    • APA

      Bellodi, M., & Martino, J. A. (2003). Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.

    • NLM

      Bellodi M, Martino JA. Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]

    • Vancouver

      Bellodi M, Martino JA. Comparison between the leakage drain current behavior in SOI pMOSFETs and SOI nMOSFETs operating at 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]

  • Parte de monografia/livro

    The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C (2003)

    Bellodi, Marcello; Martino, João Antonio

    Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP

    Assunto: MICROELETRÔNICA

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      BELLODI, Marcello e MARTINO, João Antonio. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.

    • APA

      Bellodi, M., & Martino, J. A. (2003). The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.

    • NLM

      Bellodi M, Martino JA. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]

    • Vancouver

      Bellodi M, Martino JA. The leakage drain current behavior in graded-channel SOI nMOSFETs operating up to 300°C. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
  • 1

1 - 2 (2 records)

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