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Artigo de periodico
Growth and characterization of cubic (2005)
Pacheco-Salazar, D G; Li, S F; Cerdeira, F; Meneses, E A; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro; As, D J; Lischka, K
Source: Journal of Crystal Growth. Unidade: IF
Subjects: CRISTALOGRAFIA, DIFRAÇÃO POR RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PACHECO-SALAZAR, D G et al. Growth and characterization of cubic. Journal of Crystal Growth, v. 284, n. 3-4, p. 379-387, 2005Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20. Acesso em: 27 nov. 2025.
APA
Pacheco-Salazar, D. G., Li, S. F., Cerdeira, F., Meneses, E. A., Leite, J. R., Scolfaro, L. M. R., et al. (2005). Growth and characterization of cubic. Journal of Crystal Growth, 284( 3-4), 379-387. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
NLM
Pacheco-Salazar DG, Li SF, Cerdeira F, Meneses EA, Leite JR, Scolfaro LMR, As DJ, Lischka K. Growth and characterization of cubic [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2025 nov. 27 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Vancouver
Pacheco-Salazar DG, Li SF, Cerdeira F, Meneses EA, Leite JR, Scolfaro LMR, As DJ, Lischka K. Growth and characterization of cubic [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2025 nov. 27 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5302&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=841273c738a47f3959822930346abf20
Artigo de periodico
Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate (2005)
Leite, J. R.; Scolfaro, Luisa Maria Ribeiro
Source: Journal of Crystal Growth. Unidade: IF
Subjects: MATÉRIA CONDENSADA, CRISTALOGRAFIA, FEIXES, CRESCIMENTO DE CRISTAIS, ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LEITE, J. R. e SCOLFARO, Luisa Maria Ribeiro. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate. Journal of Crystal Growth, v. 284, n. 3-4, p. 379-387, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.jcrysgro.2005.07.049. Acesso em: 27 nov. 2025.
APA
Leite, J. R., & Scolfaro, L. M. R. (2005). Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate. Journal of Crystal Growth, 284( 3-4), 379-387. doi:10.1016/j.jcrysgro.2005.07.049
NLM
Leite JR, Scolfaro LMR. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/j.jcrysgro.2005.07.049
Vancouver
Leite JR, Scolfaro LMR. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/j.jcrysgro.2005.07.049
Artigo de periodico
Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy (1993)
Shibli, S M; Henriques, André Bohomoletz ; Mendonca, C A C; Da Silva, E C F; Meneses, E A; Scolfaro, L M R; Leite, J. R.
Source: Journal of Crystal Growth. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SHIBLI, S M et al. Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy. Journal of Crystal Growth, v. 127, p. 700-2, 1993Tradução . . Acesso em: 27 nov. 2025.
APA
Shibli, S. M., Henriques, A. B., Mendonca, C. A. C., Da Silva, E. C. F., Meneses, E. A., Scolfaro, L. M. R., & Leite, J. R. (1993). Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy. Journal of Crystal Growth, 127, 700-2.
NLM
Shibli SM, Henriques AB, Mendonca CAC, Da Silva ECF, Meneses EA, Scolfaro LMR, Leite JR. Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy. Journal of Crystal Growth. 1993 ;127 700-2.[citado 2025 nov. 27 ]
Vancouver
Shibli SM, Henriques AB, Mendonca CAC, Da Silva ECF, Meneses EA, Scolfaro LMR, Leite JR. Electronic properties of multiple 'SI' 'DELTA'-doped 'GA''AS' layers grown by molecular beam epitaxy and migration-enhanced epitaxy. Journal of Crystal Growth. 1993 ;127 700-2.[citado 2025 nov. 27 ]

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