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Artigo de periodico
White ligth emission from 'rô'-doped quartenary (AlInGa)N-based superlattices: theoretical calculations for the cubic phase (2007)
Rodrigues, S. C. P.; D'Eurydice, Marcel Nogueira; Sipahi, Guilherme Matos ; Scolfaro, Luisa Maria Ribeiro; Silva Júnior, Eronides Felisberto da
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: EMISSÃO DA LUZ, ESPECTROS, LUMINESCÊNCIA, ABSORÇÃO
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ABNT
RODRIGUES, S. C. P. et al. White ligth emission from 'rô'-doped quartenary (AlInGa)N-based superlattices: theoretical calculations for the cubic phase. Journal of Applied Physics, v. 101, n. Ju 2007, p. 113706-1-113706-6, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2737968. Acesso em: 27 nov. 2025.
APA
Rodrigues, S. C. P., D'Eurydice, M. N., Sipahi, G. M., Scolfaro, L. M. R., & Silva Júnior, E. F. da. (2007). White ligth emission from 'rô'-doped quartenary (AlInGa)N-based superlattices: theoretical calculations for the cubic phase. Journal of Applied Physics, 101( Ju 2007), 113706-1-113706-6. doi:10.1063/1.2737968
NLM
Rodrigues SCP, D'Eurydice MN, Sipahi GM, Scolfaro LMR, Silva Júnior EF da. White ligth emission from 'rô'-doped quartenary (AlInGa)N-based superlattices: theoretical calculations for the cubic phase [Internet]. Journal of Applied Physics. 2007 ; 101( Ju 2007): 113706-1-113706-6.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1063/1.2737968
Vancouver
Rodrigues SCP, D'Eurydice MN, Sipahi GM, Scolfaro LMR, Silva Júnior EF da. White ligth emission from 'rô'-doped quartenary (AlInGa)N-based superlattices: theoretical calculations for the cubic phase [Internet]. Journal of Applied Physics. 2007 ; 101( Ju 2007): 113706-1-113706-6.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1063/1.2737968
Artigo de periodico
Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations (2002)
Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.; Furthmuller, J; Bechstedt, F
Source: Journal of Applied Physics. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA DOS SÓLIDOS, MUDANÇA DE FASE, ESTRUTURA ELETRÔNICA
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ABNT
TELES, L. K. et al. Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics, v. 92, n. 12, p. 7109-7113, 2002Tradução . . Acesso em: 27 nov. 2025.
APA
Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Furthmuller, J., & Bechstedt, F. (2002). Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics, 92( 12), 7109-7113.
NLM
Teles LK, Scolfaro LMR, Leite JR, Furthmuller J, Bechstedt F. Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics. 2002 ; 92( 12): 7109-7113.[citado 2025 nov. 27 ]
Vancouver
Teles LK, Scolfaro LMR, Leite JR, Furthmuller J, Bechstedt F. Phase diagram, chemical bonds, and gap bowing of cubic 'In IND.X' 'Al IND.1-X' N: ab initio calculations. Journal of Applied Physics. 2002 ; 92( 12): 7109-7113.[citado 2025 nov. 27 ]
Artigo de periodico
Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
Pusep, Yuri A ; Silva, M T O; Galzerani, J C; Rodrigues, S C P; Scolfaro, Luisa Maria Ribeiro; Lima, A. P.; Quivy, Alain André ; Leite, J. R.; Moshegov, N T; Basmaji, P
Source: Journal of Applied Physics. Unidades: IF, IFSC
Assunto: FÍSICA
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ABNT
PUSEP, Yuri A et al. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 27 nov. 2025.
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1063/1.372097
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1063/1.372097
Artigo de periodico
Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC' (1996)
Teles, L. K.; Scolfaro, L M R; Enderlein, R; Leite, J. R.; Josiek, A; Schikora, D; Lischka, K
Source: Journal of Applied Physics. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TELES, L. K. et al. Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics, v. 80, n. 11, p. 6322, 1996Tradução . . Acesso em: 27 nov. 2025.
APA
Teles, L. K., Scolfaro, L. M. R., Enderlein, R., Leite, J. R., Josiek, A., Schikora, D., & Lischka, K. (1996). Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics, 80( 11), 6322.
NLM
Teles LK, Scolfaro LMR, Enderlein R, Leite JR, Josiek A, Schikora D, Lischka K. Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics. 1996 ;80( 11): 6322.[citado 2025 nov. 27 ]
Vancouver
Teles LK, Scolfaro LMR, Enderlein R, Leite JR, Josiek A, Schikora D, Lischka K. Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'. Journal of Applied Physics. 1996 ;80( 11): 6322.[citado 2025 nov. 27 ]

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