Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor (2005)
Cerdeira, Antonio 
; Alemán, Miguel A.; Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis ; Vancaillie, Laurent
Source: IEEE Transactions on Electron Devices. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
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CERDEIRA, Antonio et al. Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor. IEEE Transactions on Electron Devices, v. 52, n. 5, p. 967-972, 2005Tradução . . Disponível em: https://doi.org/10.1109/ted.2005.846327. Acesso em: 17 nov. 2025.APA
Cerdeira, A., Alemán, M. A., Pavanello, M. A., Martino, J. A., Flandre, D., & Vancaillie, L. (2005). Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor. IEEE Transactions on Electron Devices, 52( 5), 967-972. doi:10.1109/ted.2005.846327NLM
Cerdeira A, Alemán MA, Pavanello MA, Martino JA, Flandre D, Vancaillie L. Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor [Internet]. IEEE Transactions on Electron Devices. 2005 ;52( 5): 967-972.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2005.846327Vancouver
Cerdeira A, Alemán MA, Pavanello MA, Martino JA, Flandre D, Vancaillie L. Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor [Internet]. IEEE Transactions on Electron Devices. 2005 ;52( 5): 967-972.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2005.846327
