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Filtros : "International Symposium on Silicon-on-Insulator Technology and Devices" "Sonnenberg, Victor" Limpar

Filtros

Trabalho de evento
Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor (2001)
Sonnenberg, Victor ; Martino, João Antonio
Fonte: Proceedings. Nome do evento: International Symposium on Silicon-on-Insulator Technology and Devices. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SONNENBERG, Victor e MARTINO, João Antonio. Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor. 2001, Anais.. Pennington: The Electrochemical Society, 2001. . Acesso em: 16 nov. 2025.
APA
Sonnenberg, V., & Martino, J. A. (2001). Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor. In Proceedings. Pennington: The Electrochemical Society.
NLM
Sonnenberg V, Martino JA. Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor. Proceedings. 2001 ;[citado 2025 nov. 16 ]
Vancouver
Sonnenberg V, Martino JA. Determination of silicon film doping concentration and back interface oxide charge density using SOI-MOS capacitor. Proceedings. 2001 ;[citado 2025 nov. 16 ]
Parte de monografia/livro
Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs (1996)
Simoen, Eddy ; Claeys, Cor ; Lukyanchikova, N; Petrichuk, M; Garbar, N; Martino, João Antonio ; Sonnenberg, Victor
Fonte: Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Nome do evento: International Symposium on Silicon-on-Insulator Technology and Devices. Unidade: EP
Assuntos: MICROELETRÔNICA, ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMOEN, Eddy et al. Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Tradução . Pennington: The Electrochemical Society, 1996. . . Acesso em: 16 nov. 2025.
APA
Simoen, E., Claeys, C., Lukyanchikova, N., Petrichuk, M., Garbar, N., Martino, J. A., & Sonnenberg, V. (1996). Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. In Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Pennington: The Electrochemical Society.
NLM
Simoen E, Claeys C, Lukyanchikova N, Petrichuk M, Garbar N, Martino JA, Sonnenberg V. Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. In: Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Pennington: The Electrochemical Society; 1996. [citado 2025 nov. 16 ]
Vancouver
Simoen E, Claeys C, Lukyanchikova N, Petrichuk M, Garbar N, Martino JA, Sonnenberg V. Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. In: Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Pennington: The Electrochemical Society; 1996. [citado 2025 nov. 16 ]

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