ReP USP - Resultado da busca

Artigo de periodico
Theoretical investigation of the optical spectra of superconducting 'YBA IND.2''CU IND.3''O IND.7' (1991)
Lima, G A R; Fazzio, Adalberto ; Mota, R.
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
LIMA, G A R e FAZZIO, Adalberto e MOTA, R. Theoretical investigation of the optical spectra of superconducting 'YBA IND.2''CU IND.3''O IND.7'. Solid State Communications, v. 78, p. 91-3, 1991Tradução . . Acesso em: 27 nov. 2025.
APA
Lima, G. A. R., Fazzio, A., & Mota, R. (1991). Theoretical investigation of the optical spectra of superconducting 'YBA IND.2''CU IND.3''O IND.7'. Solid State Communications, 78, 91-3.
NLM
Lima GAR, Fazzio A, Mota R. Theoretical investigation of the optical spectra of superconducting 'YBA IND.2''CU IND.3''O IND.7'. Solid State Communications. 1991 ;78 91-3.[citado 2025 nov. 27 ]
Vancouver
Lima GAR, Fazzio A, Mota R. Theoretical investigation of the optical spectra of superconducting 'YBA IND.2''CU IND.3''O IND.7'. Solid State Communications. 1991 ;78 91-3.[citado 2025 nov. 27 ]
Artigo de periodico
Many-polaron interaction effects in 'GA''AS'-'GA''AL''AS' quantum-well-wires (1991)
Campos, V B; Degani, Marcos Henrique; Hipólito, Oscar
Source: Solid State Communications. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
CAMPOS, V B e DEGANI, Marcos Henrique e HIPÓLITO, Oscar. Many-polaron interaction effects in 'GA''AS'-'GA''AL''AS' quantum-well-wires. Solid State Communications, v. 79, n. 6 , p. 473-6, 1991Tradução . . Disponível em: https://doi.org/10.1016/0038-1098(91)90033-R. Acesso em: 27 nov. 2025.
APA
Campos, V. B., Degani, M. H., & Hipólito, O. (1991). Many-polaron interaction effects in 'GA''AS'-'GA''AL''AS' quantum-well-wires. Solid State Communications, 79( 6 ), 473-6. doi:10.1016/0038-1098(91)90033-R
NLM
Campos VB, Degani MH, Hipólito O. Many-polaron interaction effects in 'GA''AS'-'GA''AL''AS' quantum-well-wires [Internet]. Solid State Communications. 1991 ;79( 6 ): 473-6.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/0038-1098(91)90033-R
Vancouver
Campos VB, Degani MH, Hipólito O. Many-polaron interaction effects in 'GA''AS'-'GA''AL''AS' quantum-well-wires [Internet]. Solid State Communications. 1991 ;79( 6 ): 473-6.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/0038-1098(91)90033-R
Artigo de periodico
Magnetic properties of 'ND IND.5' 'FE IND.17' (1991)
Nozieres, J P; Rechenberg, H R
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
NOZIERES, J P e RECHENBERG, H R. Magnetic properties of 'ND IND.5' 'FE IND.17'. Solid State Communications, v. 79, p. 21, 1991Tradução . . Acesso em: 27 nov. 2025.
APA
Nozieres, J. P., & Rechenberg, H. R. (1991). Magnetic properties of 'ND IND.5' 'FE IND.17'. Solid State Communications, 79, 21.
NLM
Nozieres JP, Rechenberg HR. Magnetic properties of 'ND IND.5' 'FE IND.17'. Solid State Communications. 1991 ;79 21.[citado 2025 nov. 27 ]
Vancouver
Nozieres JP, Rechenberg HR. Magnetic properties of 'ND IND.5' 'FE IND.17'. Solid State Communications. 1991 ;79 21.[citado 2025 nov. 27 ]
Artigo de periodico
Impurity levels of substitutional chalcogens-doped ge (1991)
Castineira, J L P; Scolfaro, L M R; Leite, J. R.
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
CASTINEIRA, J L P e SCOLFARO, L M R e LEITE, J. R. Impurity levels of substitutional chalcogens-doped ge. Solid State Communications, v. 79, p. 557, 1991Tradução . . Disponível em: https://doi.org/10.1016/0038-1098(91)90909-f. Acesso em: 27 nov. 2025.
APA
Castineira, J. L. P., Scolfaro, L. M. R., & Leite, J. R. (1991). Impurity levels of substitutional chalcogens-doped ge. Solid State Communications, 79, 557. doi:10.1016/0038-1098(91)90909-f
NLM
Castineira JLP, Scolfaro LMR, Leite JR. Impurity levels of substitutional chalcogens-doped ge [Internet]. Solid State Communications. 1991 ;79 557.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/0038-1098(91)90909-f
Vancouver
Castineira JLP, Scolfaro LMR, Leite JR. Impurity levels of substitutional chalcogens-doped ge [Internet]. Solid State Communications. 1991 ;79 557.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/0038-1098(91)90909-f
Artigo de periodico
Ground state structures of intermettallic compounds: a first-principles ising model (1991)
Lu, Z W; Wei, S H; Zunger, A; Ferreira, L G
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
LU, Z W et al. Ground state structures of intermettallic compounds: a first-principles ising model. Solid State Communications, v. 78, p. 583-8, 1991Tradução . . Disponível em: https://doi.org/10.1016/0038-1098(91)90382-6. Acesso em: 27 nov. 2025.
APA
Lu, Z. W., Wei, S. H., Zunger, A., & Ferreira, L. G. (1991). Ground state structures of intermettallic compounds: a first-principles ising model. Solid State Communications, 78, 583-8. doi:10.1016/0038-1098(91)90382-6
NLM
Lu ZW, Wei SH, Zunger A, Ferreira LG. Ground state structures of intermettallic compounds: a first-principles ising model [Internet]. Solid State Communications. 1991 ;78 583-8.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/0038-1098(91)90382-6
Vancouver
Lu ZW, Wei SH, Zunger A, Ferreira LG. Ground state structures of intermettallic compounds: a first-principles ising model [Internet]. Solid State Communications. 1991 ;78 583-8.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/0038-1098(91)90382-6
Artigo de periodico
Impurity-bound magnetopolaron in 'GA''AS' quantum well structures (1991)
Osorio, F A P; Maialle, M Z; Hipólito, Oscar
Source: Solid State Communications. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
OSORIO, F A P e MAIALLE, M Z e HIPÓLITO, Oscar. Impurity-bound magnetopolaron in 'GA''AS' quantum well structures. Solid State Communications, v. 80, n. 8 , p. 567-70, 1991Tradução . . Acesso em: 27 nov. 2025.
APA
Osorio, F. A. P., Maialle, M. Z., & Hipólito, O. (1991). Impurity-bound magnetopolaron in 'GA''AS' quantum well structures. Solid State Communications, 80( 8 ), 567-70.
NLM
Osorio FAP, Maialle MZ, Hipólito O. Impurity-bound magnetopolaron in 'GA''AS' quantum well structures. Solid State Communications. 1991 ;80( 8 ): 567-70.[citado 2025 nov. 27 ]
Vancouver
Osorio FAP, Maialle MZ, Hipólito O. Impurity-bound magnetopolaron in 'GA''AS' quantum well structures. Solid State Communications. 1991 ;80( 8 ): 567-70.[citado 2025 nov. 27 ]
Artigo de periodico
Phonon bottleneck in the spin relaxation of dilute magnetic semiconductors new model for narrowing of the magnetization steps in pulsed fields (1991)
Bindilatti, Valdir ; Vu, T Q; Shapira, Y
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
BINDILATTI, Valdir e VU, T Q e SHAPIRA, Y. Phonon bottleneck in the spin relaxation of dilute magnetic semiconductors new model for narrowing of the magnetization steps in pulsed fields. Solid State Communications, v. 77, p. 423, 1991Tradução . . Disponível em: https://doi.org/10.1016/0038-1098(91)90229-o. Acesso em: 27 nov. 2025.
APA
Bindilatti, V., Vu, T. Q., & Shapira, Y. (1991). Phonon bottleneck in the spin relaxation of dilute magnetic semiconductors new model for narrowing of the magnetization steps in pulsed fields. Solid State Communications, 77, 423. doi:10.1016/0038-1098(91)90229-o
NLM
Bindilatti V, Vu TQ, Shapira Y. Phonon bottleneck in the spin relaxation of dilute magnetic semiconductors new model for narrowing of the magnetization steps in pulsed fields [Internet]. Solid State Communications. 1991 ;77 423.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/0038-1098(91)90229-o
Vancouver
Bindilatti V, Vu TQ, Shapira Y. Phonon bottleneck in the spin relaxation of dilute magnetic semiconductors new model for narrowing of the magnetization steps in pulsed fields [Internet]. Solid State Communications. 1991 ;77 423.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/0038-1098(91)90229-o
Artigo de periodico
Electric field gradient at the 'FE' nucleus in 'ZR'-'FE' compounds (1991)
Petrilli, Helena Maria ; Pessoa, Sonia Frota
Source: Solid State Communications. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
PETRILLI, Helena Maria e PESSOA, Sonia Frota. Electric field gradient at the 'FE' nucleus in 'ZR'-'FE' compounds. Solid State Communications, v. 77, p. 103-6, 1991Tradução . . Acesso em: 27 nov. 2025.
APA
Petrilli, H. M., & Pessoa, S. F. (1991). Electric field gradient at the 'FE' nucleus in 'ZR'-'FE' compounds. Solid State Communications, 77, 103-6.
NLM
Petrilli HM, Pessoa SF. Electric field gradient at the 'FE' nucleus in 'ZR'-'FE' compounds. Solid State Communications. 1991 ;77 103-6.[citado 2025 nov. 27 ]
Vancouver
Petrilli HM, Pessoa SF. Electric field gradient at the 'FE' nucleus in 'ZR'-'FE' compounds. Solid State Communications. 1991 ;77 103-6.[citado 2025 nov. 27 ]
Artigo de periodico
Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations (1991)
Rodrigues, R; Guimaraes, P S S; Sampaio, J F; Nogueira, R A; Oliveira Junior, A T; Dias, I. F. L.; Bezerra, J C; Oliveira, A. G.; Chaves, A S; Scolfaro, L M R
Source: Solid State Communications. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
RODRIGUES, R et al. Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations. Solid State Communications, v. 78, p. 793-6, 1991Tradução . . Disponível em: https://doi.org/10.1016/0038-1098(91)90622-3. Acesso em: 27 nov. 2025.
APA
Rodrigues, R., Guimaraes, P. S. S., Sampaio, J. F., Nogueira, R. A., Oliveira Junior, A. T., Dias, I. F. L., et al. (1991). Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations. Solid State Communications, 78, 793-6. doi:10.1016/0038-1098(91)90622-3
NLM
Rodrigues R, Guimaraes PSS, Sampaio JF, Nogueira RA, Oliveira Junior AT, Dias IFL, Bezerra JC, Oliveira AG, Chaves AS, Scolfaro LMR. Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations [Internet]. Solid State Communications. 1991 ;78 793-6.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/0038-1098(91)90622-3
Vancouver
Rodrigues R, Guimaraes PSS, Sampaio JF, Nogueira RA, Oliveira Junior AT, Dias IFL, Bezerra JC, Oliveira AG, Chaves AS, Scolfaro LMR. Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations [Internet]. Solid State Communications. 1991 ;78 793-6.[citado 2025 nov. 27 ] Available from: https://doi.org/10.1016/0038-1098(91)90622-3

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