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Artigo de periodico
Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures (1996)
Braga, Nelson Liebentritt de Almeida; Zasnicoff, Luiz Sergio
Source: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BRAGA, Nelson Liebentritt de Almeida e ZASNICOFF, Luiz Sergio. Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures. Journal of Solid-State Devices and Circuits, v. 4 , n. ja 1996, p. 1-6, 1996Tradução . . Acesso em: 17 nov. 2025.
APA
Braga, N. L. de A., & Zasnicoff, L. S. (1996). Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures. Journal of Solid-State Devices and Circuits, 4 ( ja 1996), 1-6.
NLM
Braga NL de A, Zasnicoff LS. Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 1-6.[citado 2025 nov. 17 ]
Vancouver
Braga NL de A, Zasnicoff LS. Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 1-6.[citado 2025 nov. 17 ]
Artigo de periodico
New empirical model for leakage drain current of soi mosfets valid from room to high temperatures (1996)
Bellodi, Marcello; Martino, João Antonio ; Flandre, Denis
Source: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio e FLANDRE, Denis. New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits, v. 4 , n. ja 1996, p. 7-10, 1996Tradução . . Acesso em: 17 nov. 2025.
APA
Bellodi, M., Martino, J. A., & Flandre, D. (1996). New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits, 4 ( ja 1996), 7-10.
NLM
Bellodi M, Martino JA, Flandre D. New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 7-10.[citado 2025 nov. 17 ]
Vancouver
Bellodi M, Martino JA, Flandre D. New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 7-10.[citado 2025 nov. 17 ]
Artigo de periodico
A 2.488 Gb/s 1:4/1:16 demultiplexer: an experience on the design of high-speed digital GaAs ICs (1996)
Correra, Fatima Salete ; Abrão, Taufik
Source: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CORRERA, Fatima Salete e ABRÃO, Taufik. A 2.488 Gb/s 1:4/1:16 demultiplexer: an experience on the design of high-speed digital GaAs ICs. Journal of Solid-State Devices and Circuits, v. 4 , n. ja 1996, p. 24-31, 1996Tradução . . Acesso em: 17 nov. 2025.
APA
Correra, F. S., & Abrão, T. (1996). A 2.488 Gb/s 1:4/1:16 demultiplexer: an experience on the design of high-speed digital GaAs ICs. Journal of Solid-State Devices and Circuits, 4 ( ja 1996), 24-31.
NLM
Correra FS, Abrão T. A 2.488 Gb/s 1:4/1:16 demultiplexer: an experience on the design of high-speed digital GaAs ICs. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 24-31.[citado 2025 nov. 17 ]
Vancouver
Correra FS, Abrão T. A 2.488 Gb/s 1:4/1:16 demultiplexer: an experience on the design of high-speed digital GaAs ICs. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 24-31.[citado 2025 nov. 17 ]

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