Bellodi, Marcello; Martino, João Antonio 
; Flandre, Denis
Source: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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BELLODI, Marcello e MARTINO, João Antonio e FLANDRE, Denis. New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits, v. 4 , n. ja 1996, p. 7-10, 1996Tradução . . Acesso em: 16 nov. 2025.APA
Bellodi, M., Martino, J. A., & Flandre, D. (1996). New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits, 4 ( ja 1996), 7-10.NLM
Bellodi M, Martino JA, Flandre D. New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 7-10.[citado 2025 nov. 16 ]Vancouver
Bellodi M, Martino JA, Flandre D. New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 7-10.[citado 2025 nov. 16 ]
