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Filtros : "Journal of Solid-State Devices and Circuits" "Nicolett, Aparecido Sirley" Limpar

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  • Artigo de periodico

    A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction (1997)

    Nicolett, Aparecido Sirley; Martino, João Antonio

    Fonte: Journal of Solid-State Devices and Circuits. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      NICOLETT, Aparecido Sirley e MARTINO, João Antonio. A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits, v. 5, n. 1, p. 5-8, 1997Tradução . . Acesso em: 16 nov. 2025.

    • APA

      Nicolett, A. S., & Martino, J. A. (1997). A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits, 5( 1), 5-8.

    • NLM

      Nicolett AS, Martino JA. A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits. 1997 ;5( 1): 5-8.[citado 2025 nov. 16 ]

    • Vancouver

      Nicolett AS, Martino JA. A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits. 1997 ;5( 1): 5-8.[citado 2025 nov. 16 ]

  • Artigo de periodico

    Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation (1997)

    Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor

    Fonte: Journal of Solid-State Devices and Circuits. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

    Como citar
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      NICOLETT, Aparecido Sirley et al. Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits, v. 5, n. 1, p. 1-4, 1997Tradução . . Acesso em: 16 nov. 2025.

    • APA

      Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1997). Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits, 5( 1), 1-4.

    • NLM

      Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits. 1997 ; 5( 1): 1-4.[citado 2025 nov. 16 ]

    • Vancouver

      Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits. 1997 ; 5( 1): 1-4.[citado 2025 nov. 16 ]
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