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Filtros : "ECS Journal of Solid State Science and Technology" Removido: "Brasil" Limpar

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  • Artigo de periodico

    Urea detection using commercial field effect transistors (2018)

    Silva, G. O.; Mulato, Marcelo

    Source: ECS Journal of Solid State Science and Technology. Unidade: FFCLRP

    Subjects: SENSORES BIOMÉDICOS, UREIA

    Versão PublicadaAcesso à fonteDOIHow to cite
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    • ABNT

      SILVA, G. O. e MULATO, Marcelo. Urea detection using commercial field effect transistors. ECS Journal of Solid State Science and Technology, v. 7, n. 7, p. Q3014 - Q3019, 2018Tradução . . Disponível em: https://doi.org/10.1149/2.0031807jss. Acesso em: 28 nov. 2025.

    • APA

      Silva, G. O., & Mulato, M. (2018). Urea detection using commercial field effect transistors. ECS Journal of Solid State Science and Technology, 7( 7), Q3014 - Q3019. doi:10.1149/2.0031807jss

    • NLM

      Silva GO, Mulato M. Urea detection using commercial field effect transistors [Internet]. ECS Journal of Solid State Science and Technology. 2018 ; 7( 7): Q3014 - Q3019.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1149/2.0031807jss

    • Vancouver

      Silva GO, Mulato M. Urea detection using commercial field effect transistors [Internet]. ECS Journal of Solid State Science and Technology. 2018 ; 7( 7): Q3014 - Q3019.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1149/2.0031807jss

  • Artigo de periodico

    Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities (2013)

    Simoen, Eddy ; Martino, João Antonio ; Aoulaiche, Marc; Santos, Sara Dereste dos; Strobel, V; Cretu, B; Routoure, J.-M; Carin, R; Tejada, Julián; Claeys, Cor ; Rodríguez, A. Luque

    Source: ECS Journal of Solid State Science and Technology. Unidade: EP

    Subjects: SILÍCIO, FILMES FINOS

    Acesso à fonteDOIHow to cite
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    • ABNT

      SIMOEN, Eddy et al. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, v. 2, n. 11, p. Q205-Q210, 2013Tradução . . Disponível em: https://doi.org/10.1149/2.011311jss. Acesso em: 28 nov. 2025.

    • APA

      Simoen, E., Martino, J. A., Aoulaiche, M., Santos, S. D. dos, Strobel, V., Cretu, B., et al. (2013). Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, 2( 11), Q205-Q210. doi:10.1149/2.011311jss

    • NLM

      Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Tejada J, Claeys C, Rodríguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1149/2.011311jss

    • Vancouver

      Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Tejada J, Claeys C, Rodríguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1149/2.011311jss

  • Artigo de periodico

    V2O5/WO3 mixed oxide films as pH-EGFET sensor: sequential Re-usage and fabrication volume analysis (2012)

    Guidelli, Éder José; Guerra, Elidia Maria; Mulato, Marcelo

    Source: ECS Journal of Solid State Science and Technology. Unidade: FFCLRP

    Subjects: TUNGSTÊNIO, VANÁDIO, PROCESSO SOL-GEL, SENSORES QUÍMICOS

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      GUIDELLI, Éder José e GUERRA, Elidia Maria e MULATO, Marcelo. V2O5/WO3 mixed oxide films as pH-EGFET sensor: sequential Re-usage and fabrication volume analysis. ECS Journal of Solid State Science and Technology, v. 1, n. 3, p. N39-N44, 2012Tradução . . Disponível em: https://doi.org/10.1149/2.007203jss. Acesso em: 28 nov. 2025.

    • APA

      Guidelli, É. J., Guerra, E. M., & Mulato, M. (2012). V2O5/WO3 mixed oxide films as pH-EGFET sensor: sequential Re-usage and fabrication volume analysis. ECS Journal of Solid State Science and Technology, 1( 3), N39-N44. doi:10.1149/2.007203jss

    • NLM

      Guidelli ÉJ, Guerra EM, Mulato M. V2O5/WO3 mixed oxide films as pH-EGFET sensor: sequential Re-usage and fabrication volume analysis [Internet]. ECS Journal of Solid State Science and Technology. 2012 ; 1( 3): N39-N44.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1149/2.007203jss

    • Vancouver

      Guidelli ÉJ, Guerra EM, Mulato M. V2O5/WO3 mixed oxide films as pH-EGFET sensor: sequential Re-usage and fabrication volume analysis [Internet]. ECS Journal of Solid State Science and Technology. 2012 ; 1( 3): N39-N44.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1149/2.007203jss
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