V2O5/WO3 mixed oxide films as pH-EGFET sensor: sequential Re-usage and fabrication volume analysis (2012)
- Authors:
- Autor USP: MULATO, MARCELO - FFCLRP
- Unidade: FFCLRP
- DOI: 10.1149/2.007203jss
- Subjects: TUNGSTÊNIO; VANÁDIO; PROCESSO SOL-GEL; SENSORES QUÍMICOS
- Language: Inglês
- Imprenta:
- Publisher place: Pennington
- Date published: 2012
- Source:
- Título: ECS Journal of Solid State Science and Technology
- ISSN: 2162-8769
- Volume/Número/Paginação/Ano: v. 1, n. 3, p. N39-N44, 2012
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
GUIDELLI, Éder José e GUERRA, Elidia Maria e MULATO, Marcelo. V2O5/WO3 mixed oxide films as pH-EGFET sensor: sequential Re-usage and fabrication volume analysis. ECS Journal of Solid State Science and Technology, v. 1, n. 3, p. N39-N44, 2012Tradução . . Disponível em: https://doi.org/10.1149/2.007203jss. Acesso em: 10 fev. 2026. -
APA
Guidelli, É. J., Guerra, E. M., & Mulato, M. (2012). V2O5/WO3 mixed oxide films as pH-EGFET sensor: sequential Re-usage and fabrication volume analysis. ECS Journal of Solid State Science and Technology, 1( 3), N39-N44. doi:10.1149/2.007203jss -
NLM
Guidelli ÉJ, Guerra EM, Mulato M. V2O5/WO3 mixed oxide films as pH-EGFET sensor: sequential Re-usage and fabrication volume analysis [Internet]. ECS Journal of Solid State Science and Technology. 2012 ; 1( 3): N39-N44.[citado 2026 fev. 10 ] Available from: https://doi.org/10.1149/2.007203jss -
Vancouver
Guidelli ÉJ, Guerra EM, Mulato M. V2O5/WO3 mixed oxide films as pH-EGFET sensor: sequential Re-usage and fabrication volume analysis [Internet]. ECS Journal of Solid State Science and Technology. 2012 ; 1( 3): N39-N44.[citado 2026 fev. 10 ] Available from: https://doi.org/10.1149/2.007203jss - Caracterização de cristais de 'Hgl IND.2' para detecção de raios X na faixa de mamografia
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Informações sobre o DOI: 10.1149/2.007203jss (Fonte: oaDOI API)
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