Source: SBMicro 2001: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
ABNT
SILVA, Ana Neilde Rodrigues da e MORIMOTO, Nilton Itiro e BONNAUD, Olivier. The influence of process parameters on the electrical bahavior of silicon oxide thin films deposited by PECVD-TEOS. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 15 nov. 2025.APA
Silva, A. N. R. da, Morimoto, N. I., & Bonnaud, O. (2001). The influence of process parameters on the electrical bahavior of silicon oxide thin films deposited by PECVD-TEOS. In SBMicro 2001: proceedings. Brasília: SBMicro.NLM
Silva ANR da, Morimoto NI, Bonnaud O. The influence of process parameters on the electrical bahavior of silicon oxide thin films deposited by PECVD-TEOS. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 15 ]Vancouver
Silva ANR da, Morimoto NI, Bonnaud O. The influence of process parameters on the electrical bahavior of silicon oxide thin films deposited by PECVD-TEOS. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 15 ]
