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Artigo de periodico
Analytical modeling of the substrate influences on accumulation-mode SOI pMOSFETs at room temperature and at liquid nitrogen temperature (1997)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Colinge, Jean-Pierre
Fonte: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e COLINGE, Jean-Pierre. Analytical modeling of the substrate influences on accumulation-mode SOI pMOSFETs at room temperature and at liquid nitrogen temperature. Solid-State Electronics, v. 41, n. 9, p. 1241-1246, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(97)00071-3. Acesso em: 15 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., & Colinge, J. -P. (1997). Analytical modeling of the substrate influences on accumulation-mode SOI pMOSFETs at room temperature and at liquid nitrogen temperature. Solid-State Electronics, 41( 9), 1241-1246. doi:10.1016/s0038-1101(97)00071-3
NLM
Pavanello MA, Martino JA, Colinge J-P. Analytical modeling of the substrate influences on accumulation-mode SOI pMOSFETs at room temperature and at liquid nitrogen temperature [Internet]. Solid-State Electronics. 1997 ; 41( 9): 1241-1246.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/s0038-1101(97)00071-3
Vancouver
Pavanello MA, Martino JA, Colinge J-P. Analytical modeling of the substrate influences on accumulation-mode SOI pMOSFETs at room temperature and at liquid nitrogen temperature [Internet]. Solid-State Electronics. 1997 ; 41( 9): 1241-1246.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/s0038-1101(97)00071-3
Artigo de periodico
Substrate influences on fully depleted enhacement mode SOI MOSFETs at room temperature and 77 K (1997)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Colinge, Jean-Pierre
Fonte: Solid-State Electronics. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e COLINGE, Jean-Pierre. Substrate influences on fully depleted enhacement mode SOI MOSFETs at room temperature and 77 K. Solid-State Electronics, v. 41, n. ja 1997, p. 111-119, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0038-1101(96)00126-8. Acesso em: 15 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., & Colinge, J. -P. (1997). Substrate influences on fully depleted enhacement mode SOI MOSFETs at room temperature and 77 K. Solid-State Electronics, 41( ja 1997), 111-119. doi:10.1016/s0038-1101(96)00126-8
NLM
Pavanello MA, Martino JA, Colinge J-P. Substrate influences on fully depleted enhacement mode SOI MOSFETs at room temperature and 77 K [Internet]. Solid-State Electronics. 1997 ; 41( ja 1997): 111-119.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/s0038-1101(96)00126-8
Vancouver
Pavanello MA, Martino JA, Colinge J-P. Substrate influences on fully depleted enhacement mode SOI MOSFETs at room temperature and 77 K [Internet]. Solid-State Electronics. 1997 ; 41( ja 1997): 111-119.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/s0038-1101(96)00126-8
Trabalho de evento
Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature (1996)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Colinge, Jean-Pierre
Fonte: Proceedings. Nome do evento: Conference of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e COLINGE, Jean-Pierre. Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 15 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., & Colinge, J. -P. (1996). Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature. In Proceedings. São Paulo: Sbmicro.
NLM
Pavanello MA, Martino JA, Colinge J-P. Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature. Proceedings. 1996 ;[citado 2025 nov. 15 ]
Vancouver
Pavanello MA, Martino JA, Colinge J-P. Theoretical and experimental analysis of the substrate effect on accumulation mode p-channel soi mosfet at room and at liquid nitrogen temperature. Proceedings. 1996 ;[citado 2025 nov. 15 ]

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