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  • Source: ICLP. Proceedings. Conference titles: International Conference on Lightning Protection. Unidades: IEE, EP

    Subjects: REDES DE DISTRIBUIÇÃO DE ENERGIA ELÉTRICA, ELETRÔNICA DE POTÊNCIA

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    • ABNT

      NUCCI, C A et al. Lightning-induced voltages of distribution overhead lines: comparison between experimental results from a reduced-scale model and most recent approaches. 1998, Anais.. Stafford: Staffordshire University, 1998. . Acesso em: 11 out. 2024.
    • APA

      Nucci, C. A., Borghetti, A., Piantini, A., & Janiszewski, J. M. (1998). Lightning-induced voltages of distribution overhead lines: comparison between experimental results from a reduced-scale model and most recent approaches. In ICLP. Proceedings. Stafford: Staffordshire University.
    • NLM

      Nucci CA, Borghetti A, Piantini A, Janiszewski JM. Lightning-induced voltages of distribution overhead lines: comparison between experimental results from a reduced-scale model and most recent approaches. ICLP. Proceedings. 1998 ;[citado 2024 out. 11 ]
    • Vancouver

      Nucci CA, Borghetti A, Piantini A, Janiszewski JM. Lightning-induced voltages of distribution overhead lines: comparison between experimental results from a reduced-scale model and most recent approaches. ICLP. Proceedings. 1998 ;[citado 2024 out. 11 ]
  • Source: Proceedings. Conference titles: International Conference on Electricity Distribution. Unidades: IEE, EP

    Assunto: PROTEÇÃO DE SISTEMAS ELÉTRICOS

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    • ABNT

      PIANTINI, Alexandre e JANISZEWSKI, Jorge Mieczyslaw. Lightning induced voltages on distribution lines protected with surge arresters. 1997, Anais.. London: IEE, 1997. . Acesso em: 11 out. 2024.
    • APA

      Piantini, A., & Janiszewski, J. M. (1997). Lightning induced voltages on distribution lines protected with surge arresters. In Proceedings. London: IEE.
    • NLM

      Piantini A, Janiszewski JM. Lightning induced voltages on distribution lines protected with surge arresters. Proceedings. 1997 ;[citado 2024 out. 11 ]
    • Vancouver

      Piantini A, Janiszewski JM. Lightning induced voltages on distribution lines protected with surge arresters. Proceedings. 1997 ;[citado 2024 out. 11 ]
  • Source: Solid-State Electronics. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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    • ABNT

      MARTINO, João Antonio e SIMOEN, Eddy e CLAEYS, Cor. New method for determining the front and back interface trap densities of accumulation mode soi mofets at 77k. Solid-State Electronics, v. 38, n. 10, p. 1799-803, 1995Tradução . . Acesso em: 11 out. 2024.
    • APA

      Martino, J. A., Simoen, E., & Claeys, C. (1995). New method for determining the front and back interface trap densities of accumulation mode soi mofets at 77k. Solid-State Electronics, 38( 10), 1799-803.
    • NLM

      Martino JA, Simoen E, Claeys C. New method for determining the front and back interface trap densities of accumulation mode soi mofets at 77k. Solid-State Electronics. 1995 ;38( 10): 1799-803.[citado 2024 out. 11 ]
    • Vancouver

      Martino JA, Simoen E, Claeys C. New method for determining the front and back interface trap densities of accumulation mode soi mofets at 77k. Solid-State Electronics. 1995 ;38( 10): 1799-803.[citado 2024 out. 11 ]
  • Source: Semiconductor Science and Technology. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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    • ABNT

      SANTOS FILHO, Sebastião Gomes dos et al. Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics. Semiconductor Science and Technology, v. 10, n. 7 , p. 990-6, 1995Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/10/7/015. Acesso em: 11 out. 2024.
    • APA

      Santos Filho, S. G. dos, Hasenack, C. M., Lopes, M. C. V., & Baranauskas, V. (1995). Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics. Semiconductor Science and Technology, 10( 7 ), 990-6. doi:10.1088/0268-1242/10/7/015
    • NLM

      Santos Filho SG dos, Hasenack CM, Lopes MCV, Baranauskas V. Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics [Internet]. Semiconductor Science and Technology. 1995 ;10( 7 ): 990-6.[citado 2024 out. 11 ] Available from: https://doi.org/10.1088/0268-1242/10/7/015
    • Vancouver

      Santos Filho SG dos, Hasenack CM, Lopes MCV, Baranauskas V. Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics [Internet]. Semiconductor Science and Technology. 1995 ;10( 7 ): 990-6.[citado 2024 out. 11 ] Available from: https://doi.org/10.1088/0268-1242/10/7/015
  • Source: Philosophical Magazine B. Unidade: EP

    Assunto: SEMICONDUTORES

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    • ABNT

      FONSECA, Fernando Josepetti e GALLONI, R e NYLANDSTED LARSEN, A. Electrical activation of potassium and phosphorus ions implanted in hydrogenated amorphous silicon. Philosophical Magazine B, v. 67, n. 1 , p. 107-15, 1993Tradução . . Disponível em: https://doi.org/10.1080/13642819308230222. Acesso em: 11 out. 2024.
    • APA

      Fonseca, F. J., Galloni, R., & Nylandsted Larsen, A. (1993). Electrical activation of potassium and phosphorus ions implanted in hydrogenated amorphous silicon. Philosophical Magazine B, 67( 1 ), 107-15. doi:10.1080/13642819308230222
    • NLM

      Fonseca FJ, Galloni R, Nylandsted Larsen A. Electrical activation of potassium and phosphorus ions implanted in hydrogenated amorphous silicon [Internet]. Philosophical Magazine B. 1993 ;67( 1 ): 107-15.[citado 2024 out. 11 ] Available from: https://doi.org/10.1080/13642819308230222
    • Vancouver

      Fonseca FJ, Galloni R, Nylandsted Larsen A. Electrical activation of potassium and phosphorus ions implanted in hydrogenated amorphous silicon [Internet]. Philosophical Magazine B. 1993 ;67( 1 ): 107-15.[citado 2024 out. 11 ] Available from: https://doi.org/10.1080/13642819308230222
  • Source: Ima Journal of Mathematical Control and Information. Unidade: EP

    Assunto: CONTROLE (TEORIA DE SISTEMAS E CONTROLE)

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      COSTA, Oswaldo Luiz do Valle. Asymptotic convergence for the average impulse control of piecewise deterministic processes. Ima Journal of Mathematical Control and Information, v. 8 , n. 1 , p. 1-27, 1991Tradução . . Disponível em: https://doi.org/10.1093/imamci/8.1.1. Acesso em: 11 out. 2024.
    • APA

      Costa, O. L. do V. (1991). Asymptotic convergence for the average impulse control of piecewise deterministic processes. Ima Journal of Mathematical Control and Information, 8 ( 1 ), 1-27. doi:10.1093/imamci/8.1.1
    • NLM

      Costa OL do V. Asymptotic convergence for the average impulse control of piecewise deterministic processes [Internet]. Ima Journal of Mathematical Control and Information. 1991 ;8 ( 1 ): 1-27.[citado 2024 out. 11 ] Available from: https://doi.org/10.1093/imamci/8.1.1
    • Vancouver

      Costa OL do V. Asymptotic convergence for the average impulse control of piecewise deterministic processes [Internet]. Ima Journal of Mathematical Control and Information. 1991 ;8 ( 1 ): 1-27.[citado 2024 out. 11 ] Available from: https://doi.org/10.1093/imamci/8.1.1

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