Oxygen precipitation in highly carbon doped silicon (1987)
Source: Proceedings. Conference titles: Gettering and Defect Engineering in Semiconductor Technology. Unidade: IF
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STOJANOFF, Vivian e BULLA, Douglas Anderson Pereira. Oxygen precipitation in highly carbon doped silicon. 1987, Anais.. Berlin: Gadest, 1987. . Acesso em: 15 ago. 2024.APA
Stojanoff, V., & Bulla, D. A. P. (1987). Oxygen precipitation in highly carbon doped silicon. In Proceedings. Berlin: Gadest.NLM
Stojanoff V, Bulla DAP. Oxygen precipitation in highly carbon doped silicon. Proceedings. 1987 ;[citado 2024 ago. 15 ]Vancouver
Stojanoff V, Bulla DAP. Oxygen precipitation in highly carbon doped silicon. Proceedings. 1987 ;[citado 2024 ago. 15 ]