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Artigo de periodico
Ion implantation in titanium dioxide thin films studied by perturbed angular correlations (2017)
Schell, Juliana; Lupascu, Doru C; Carbonari, Artur Wilson; Mansano, Ronaldo Domingues ; Ribeiro Junior, Iberê Souza; Dang, Thien Thanh; Anusca, Irina; Trivedi, Harsh K; Johnston, Karl; Vianden, Reiner
Source: Journal of Applied Physics. Unidade: EP
Subjects: TEMPERATURA, RAIOS GAMA, FILMES FINOS
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ABNT
SCHELL, Juliana et al. Ion implantation in titanium dioxide thin films studied by perturbed angular correlations. Journal of Applied Physics, v. 121, n. 14, 2017Tradução . . Disponível em: https://doi.org/10.1063/1.4980168. Acesso em: 09 nov. 2025.
APA
Schell, J., Lupascu, D. C., Carbonari, A. W., Mansano, R. D., Ribeiro Junior, I. S., Dang, T. T., et al. (2017). Ion implantation in titanium dioxide thin films studied by perturbed angular correlations. Journal of Applied Physics, 121( 14). doi:10.1063/1.4980168
NLM
Schell J, Lupascu DC, Carbonari AW, Mansano RD, Ribeiro Junior IS, Dang TT, Anusca I, Trivedi HK, Johnston K, Vianden R. Ion implantation in titanium dioxide thin films studied by perturbed angular correlations [Internet]. Journal of Applied Physics. 2017 ; 121( 14):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4980168
Vancouver
Schell J, Lupascu DC, Carbonari AW, Mansano RD, Ribeiro Junior IS, Dang TT, Anusca I, Trivedi HK, Johnston K, Vianden R. Ion implantation in titanium dioxide thin films studied by perturbed angular correlations [Internet]. Journal of Applied Physics. 2017 ; 121( 14):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4980168
Artigo de periodico
Cd and In-doping in thin film SnO2 (2017)
Schell, Juliana; Lupascu, Doru C; Carbonari, Artur Wilson; Mansano, Ronaldo Domingues ; Freitas, Rafael Sá de ; Gonçalves, João Nuno; Dang, Thien Thanh; Vianden, Reiner
Source: Journal of Applied Physics. Unidades: EP, IF
Subjects: MAGNETISMO, FENOMENOS MAGNÉTICOS, FILMES FINOS
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ABNT
SCHELL, Juliana et al. Cd and In-doping in thin film SnO2. Journal of Applied Physics, v. 121, n. 19, p. 195303/1-195303/6, 2017Tradução . . Disponível em: https://doi.org/10.1063/1.4983669. Acesso em: 09 nov. 2025.
APA
Schell, J., Lupascu, D. C., Carbonari, A. W., Mansano, R. D., Freitas, R. S. de, Gonçalves, J. N., et al. (2017). Cd and In-doping in thin film SnO2. Journal of Applied Physics, 121( 19), 195303/1-195303/6. doi:10.1063/1.4983669
NLM
Schell J, Lupascu DC, Carbonari AW, Mansano RD, Freitas RS de, Gonçalves JN, Dang TT, Vianden R. Cd and In-doping in thin film SnO2 [Internet]. Journal of Applied Physics. 2017 ; 121( 19): 195303/1-195303/6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4983669
Vancouver
Schell J, Lupascu DC, Carbonari AW, Mansano RD, Freitas RS de, Gonçalves JN, Dang TT, Vianden R. Cd and In-doping in thin film SnO2 [Internet]. Journal of Applied Physics. 2017 ; 121( 19): 195303/1-195303/6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4983669
Artigo de periodico
Oxide-cladding aluminum nitride photonic crystal slab: design and investigation of material dispersion and fabrication induced disorder (2016)
Melo, Emerson Gonçalves de ; Alayo Chávez, Marco Isaías ; Carvalho, D. O; Ferlauto, Andre Santarosa ; Armas Alvarado, Maria Elisia; Páez Carreño, Marcelo Nelson
Source: Journal of Applied Physics. Unidade: EP
Subjects: FOTÔNICA, ÓPTICA
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ABNT
MELO, Emerson Gonçalves de et al. Oxide-cladding aluminum nitride photonic crystal slab: design and investigation of material dispersion and fabrication induced disorder. Journal of Applied Physics, v. 119, p. 023107, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4939773. Acesso em: 09 nov. 2025.
APA
Melo, E. G. de, Alayo Chávez, M. I., Carvalho, D. O., Ferlauto, A. S., Armas Alvarado, M. E., & Páez Carreño, M. N. (2016). Oxide-cladding aluminum nitride photonic crystal slab: design and investigation of material dispersion and fabrication induced disorder. Journal of Applied Physics, 119, 023107. doi:10.1063/1.4939773
NLM
Melo EG de, Alayo Chávez MI, Carvalho DO, Ferlauto AS, Armas Alvarado ME, Páez Carreño MN. Oxide-cladding aluminum nitride photonic crystal slab: design and investigation of material dispersion and fabrication induced disorder [Internet]. Journal of Applied Physics. 2016 ; 119 023107.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4939773
Vancouver
Melo EG de, Alayo Chávez MI, Carvalho DO, Ferlauto AS, Armas Alvarado ME, Páez Carreño MN. Oxide-cladding aluminum nitride photonic crystal slab: design and investigation of material dispersion and fabrication induced disorder [Internet]. Journal of Applied Physics. 2016 ; 119 023107.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4939773
Artigo de periodico
Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices (2015)
Machado, Wanda Valle Marcondes; Assali, Lucy Vitoria Credidio ; Justo Filho, João Francisco
Source: Journal of Applied Physics. Unidade: EP
Subjects: ELETROMAGNETISMO, SILÍCIO
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ABNT
MACHADO, Wanda Valle Marcondes e ASSALI, Lucy Vitoria Credidio e JUSTO FILHO, João Francisco. Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices. Journal of Applied Physics, v. 118, n. 4, p. 045704, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4927293. Acesso em: 09 nov. 2025.
APA
Machado, W. V. M., Assali, L. V. C., & Justo Filho, J. F. (2015). Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices. Journal of Applied Physics, 118( 4), 045704. doi:10.1063/1.4927293
NLM
Machado WVM, Assali LVC, Justo Filho JF. Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices [Internet]. Journal of Applied Physics. 2015 ; 118( 4): 045704.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4927293
Vancouver
Machado WVM, Assali LVC, Justo Filho JF. Iron and manganese-related magnetic centers in hexagonal silicon carbide: a possible roadmap for spintronic devices [Internet]. Journal of Applied Physics. 2015 ; 118( 4): 045704.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4927293
Artigo de periodico
Local hysteresis loop measurements by magneto-optical scanning near-field optical microscope (2005)
Schoenmaker, Jeroen ; Santos, A. D.; Seabra, Antonio Carlos ; Souche, Yves; Jamet, Jean-Pierre; Thiaville, André ; Ferré, Jacques
Source: Journal of Applied Physics. Unidades: IF, EP
Subjects: MAGNETISMO, MICROSCOPIA ELETRÔNICA DE VARREDURA
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ABNT
SCHOENMAKER, Jeroen et al. Local hysteresis loop measurements by magneto-optical scanning near-field optical microscope. Journal of Applied Physics, v. 98, n. 8, p. 086108/1-086108/6, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.2115089. Acesso em: 09 nov. 2025.
APA
Schoenmaker, J., Santos, A. D., Seabra, A. C., Souche, Y., Jamet, J. -P., Thiaville, A., & Ferré, J. (2005). Local hysteresis loop measurements by magneto-optical scanning near-field optical microscope. Journal of Applied Physics, 98( 8), 086108/1-086108/6. doi:10.1063/1.2115089
NLM
Schoenmaker J, Santos AD, Seabra AC, Souche Y, Jamet J-P, Thiaville A, Ferré J. Local hysteresis loop measurements by magneto-optical scanning near-field optical microscope [Internet]. Journal of Applied Physics. 2005 ; 98( 8): 086108/1-086108/6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2115089
Vancouver
Schoenmaker J, Santos AD, Seabra AC, Souche Y, Jamet J-P, Thiaville A, Ferré J. Local hysteresis loop measurements by magneto-optical scanning near-field optical microscope [Internet]. Journal of Applied Physics. 2005 ; 98( 8): 086108/1-086108/6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2115089
Artigo de periodico
Iron-acceptor pairs in silicon: structure and formation processes (2001)
Zhao, Song; Assali, Lucy Vitoria Credidio ; Justo Filho, João Francisco ; Gilmer, George H; Kimerling, Lionel C
Source: Journal of Applied Physics. Unidades: IF, EP
Subjects: RESSONÂNCIA PARAMAGNÉTICA ELETRÔNICA, ELETROSTÁTICA, ELASTICIDADE
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ABNT
ZHAO, Song et al. Iron-acceptor pairs in silicon: structure and formation processes. Journal of Applied Physics, v. 90, n. 2744-2754, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1389763. Acesso em: 09 nov. 2025.
APA
Zhao, S., Assali, L. V. C., Justo Filho, J. F., Gilmer, G. H., & Kimerling, L. C. (2001). Iron-acceptor pairs in silicon: structure and formation processes. Journal of Applied Physics, 90( 2744-2754). doi:10.1063/1.1389763
NLM
Zhao S, Assali LVC, Justo Filho JF, Gilmer GH, Kimerling LC. Iron-acceptor pairs in silicon: structure and formation processes [Internet]. Journal of Applied Physics. 2001 ; 90( 2744-2754):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1389763
Vancouver
Zhao S, Assali LVC, Justo Filho JF, Gilmer GH, Kimerling LC. Iron-acceptor pairs in silicon: structure and formation processes [Internet]. Journal of Applied Physics. 2001 ; 90( 2744-2754):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1389763
Artigo de periodico
On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films (1996)
Mastelaro, Valmor Roberto ; Flank, A M; Fantini, Márcia Carvalho de Abreu ; Bittencourt, Diomar da Rocha Santos; Páez Carreño, Marcelo Nelson ; Pereyra, Inés
Source: Journal of Applied Physics. Unidades: IF, EP
Assunto: MATÉRIA CONDENSADA
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ABNT
MASTELARO, Valmor Roberto et al. On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films. Journal of Applied Physics, v. 79, n. 3 , p. 1324-9, 1996Tradução . . Acesso em: 09 nov. 2025.
APA
Mastelaro, V. R., Flank, A. M., Fantini, M. C. de A., Bittencourt, D. da R. S., Páez Carreño, M. N., & Pereyra, I. (1996). On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films. Journal of Applied Physics, 79( 3 ), 1324-9.
NLM
Mastelaro VR, Flank AM, Fantini MC de A, Bittencourt D da RS, Páez Carreño MN, Pereyra I. On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films. Journal of Applied Physics. 1996 ;79( 3 ): 1324-9.[citado 2025 nov. 09 ]
Vancouver
Mastelaro VR, Flank AM, Fantini MC de A, Bittencourt D da RS, Páez Carreño MN, Pereyra I. On the structural properties of a-'SI IND.1-X' 'c ind.X: h' thin films. Journal of Applied Physics. 1996 ;79( 3 ): 1324-9.[citado 2025 nov. 09 ]
Artigo de periodico
Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers (1994)
Velasquez, E L Z; Fantini, Márcia Carvalho de Abreu ; Páez Carreño, Marcelo Nelson ; Pereyra, Inés ; Takahashi, H; Landers, R
Source: Journal of Applied Physics. Unidades: EP, IF
Assunto: MATÉRIA CONDENSADA
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ABNT
VELASQUEZ, E L Z et al. Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers. Journal of Applied Physics, v. 75, n. ja 1994, p. 543-8, 1994Tradução . . Acesso em: 09 nov. 2025.
APA
Velasquez, E. L. Z., Fantini, M. C. de A., Páez Carreño, M. N., Pereyra, I., Takahashi, H., & Landers, R. (1994). Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers. Journal of Applied Physics, 75( ja 1994), 543-8.
NLM
Velasquez ELZ, Fantini MC de A, Páez Carreño MN, Pereyra I, Takahashi H, Landers R. Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers. Journal of Applied Physics. 1994 ;75( ja 1994): 543-8.[citado 2025 nov. 09 ]
Vancouver
Velasquez ELZ, Fantini MC de A, Páez Carreño MN, Pereyra I, Takahashi H, Landers R. Effect of plasma etching, carbon concentration, and buffer layer on the properties of a-'SI': h / a-'SI IND.1-X''C IND.X' : h multilayers. Journal of Applied Physics. 1994 ;75( ja 1994): 543-8.[citado 2025 nov. 09 ]

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