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Artigo de periodico
Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI' (1989)
Shen, W M; Fantini, Márcia Carvalho de Abreu ; Tomkiewicz, M; Gambino, J P
Fonte: Journal of Applied Physics. Unidade: IF
Assunto: CRISTALOGRAFIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SHEN, W M et al. Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI'. Journal of Applied Physics, v. 66, n. 4 , p. 1759-64, 1989Tradução . . Acesso em: 08 nov. 2025.
APA
Shen, W. M., Fantini, M. C. de A., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI'. Journal of Applied Physics, 66( 4 ), 1759-64.
NLM
Shen WM, Fantini MC de A, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI'. Journal of Applied Physics. 1989 ;66( 4 ): 1759-64.[citado 2025 nov. 08 ]
Vancouver
Shen WM, Fantini MC de A, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Ii. Photoreflectance and electroreflectance of n-'SI'. Journal of Applied Physics. 1989 ;66( 4 ): 1759-64.[citado 2025 nov. 08 ]
Artigo de periodico
Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI' (1989)
Fantini, Márcia Carvalho de Abreu ; Shen, W M; Tomkiewicz, M; Gambino, J P
Fonte: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics, v. 66, n. 5 , p. 2148-55, 1989Tradução . . Acesso em: 08 nov. 2025.
APA
Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics, 66( 5 ), 2148-55.
NLM
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics. 1989 ;66( 5 ): 2148-55.[citado 2025 nov. 08 ]
Vancouver
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . Iv. Impendance spectroscopy of reactive ion etched 'SI'. Journal of Applied Physics. 1989 ;66( 5 ): 2148-55.[citado 2025 nov. 08 ]
Artigo de periodico
Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si (1989)
Shen, W M; Fantini, Márcia Carvalho de Abreu ; Pollak, F H; Tomkiewicz, M; Leary, H; Gambino, J P
Fonte: Journal of Applied Physics. Unidade: IF
Assunto: CRISTALOGRAFIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SHEN, W M et al. Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si. Journal of Applied Physics, v. 66, n. 4 , p. 1765-71, 1989Tradução . . Disponível em: https://doi.org/10.1063/1.344367. Acesso em: 08 nov. 2025.
APA
Shen, W. M., Fantini, M. C. de A., Pollak, F. H., Tomkiewicz, M., Leary, H., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si. Journal of Applied Physics, 66( 4 ), 1765-71. doi:10.1063/1.344367
NLM
Shen WM, Fantini MC de A, Pollak FH, Tomkiewicz M, Leary H, Gambino JP. Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si [Internet]. Journal of Applied Physics. 1989 ;66( 4 ): 1765-71.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.344367
Vancouver
Shen WM, Fantini MC de A, Pollak FH, Tomkiewicz M, Leary H, Gambino JP. Liquid junctions for characterization of electronic materials . Iii. Modulation spectroscopies of reactive ion etching of si [Internet]. Journal of Applied Physics. 1989 ;66( 4 ): 1765-71.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.344367
Artigo de periodico
Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' (1989)
Fantini, Márcia Carvalho de Abreu ; Shen, W M; Tomkiewicz, M; Gambino, J P
Fonte: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics, v. 66, n. 10, p. 4846-53, 1989Tradução . . Disponível em: https://doi.org/10.1063/1.343801. Acesso em: 08 nov. 2025.
APA
Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI'. Journal of Applied Physics, 66( 10), 4846-53. doi:10.1063/1.343801
NLM
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' [Internet]. Journal of Applied Physics. 1989 ;66( 10): 4846-53.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.343801
Vancouver
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . V. Comparison with solid state devices used to characterize reactive ion etching of 'SI' [Internet]. Journal of Applied Physics. 1989 ;66( 10): 4846-53.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.343801
Artigo de periodico
Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface (1989)
Fantini, Márcia Carvalho de Abreu ; Shen, W M; Tomkiewicz, M; Gambino, J P
Fonte: Journal of Applied Physics. Unidade: IF
Assunto: SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FANTINI, Márcia Carvalho de Abreu et al. Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface. Journal of Applied Physics, v. 65, n. 12, p. 4884-90, 1989Tradução . . Disponível em: https://doi.org/10.1063/1.343203. Acesso em: 08 nov. 2025.
APA
Fantini, M. C. de A., Shen, W. M., Tomkiewicz, M., & Gambino, J. P. (1989). Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface. Journal of Applied Physics, 65( 12), 4884-90. doi:10.1063/1.343203
NLM
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface [Internet]. Journal of Applied Physics. 1989 ;65( 12): 4884-90.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.343203
Vancouver
Fantini MC de A, Shen WM, Tomkiewicz M, Gambino JP. Liquid junctions for characterization of electronic materials . I. The potential distribution at the 'SI' / method interface [Internet]. Journal of Applied Physics. 1989 ;65( 12): 4884-90.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.343203

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