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Artigo de periodico
Many-body effects in wide parabolic AlGaAs quantum wells (2007)
Tabata, A; Martins, M R; Oliveira, J B B; Lamas, T. E.; Duarte, C A; Silva, Euzi Conceicao Fernandes da; Gusev, Guennadii Michailovich
Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, ESPALHAMENTO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TABATA, A et al. Many-body effects in wide parabolic AlGaAs quantum wells. Journal of Applied Physics, v. 102, n. 9, p. 093715/1-093715/5, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2809418. Acesso em: 08 nov. 2025.
APA
Tabata, A., Martins, M. R., Oliveira, J. B. B., Lamas, T. E., Duarte, C. A., Silva, E. C. F. da, & Gusev, G. M. (2007). Many-body effects in wide parabolic AlGaAs quantum wells. Journal of Applied Physics, 102( 9), 093715/1-093715/5. doi:10.1063/1.2809418
NLM
Tabata A, Martins MR, Oliveira JBB, Lamas TE, Duarte CA, Silva ECF da, Gusev GM. Many-body effects in wide parabolic AlGaAs quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 9): 093715/1-093715/5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2809418
Vancouver
Tabata A, Martins MR, Oliveira JBB, Lamas TE, Duarte CA, Silva ECF da, Gusev GM. Many-body effects in wide parabolic AlGaAs quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 9): 093715/1-093715/5.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2809418
Artigo de periodico
The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy (2007)
Rudno-Rudziñski, W; Sek, G; Misiewicz, J; Lamas, T. E.; Quivy, A. A.
Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, EFEITO MOSSBAUER, LASER
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RUDNO-RUDZIÑSKI, W et al. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, v. 101, n. 7, p. 0735018/1-073518/4, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2714686. Acesso em: 08 nov. 2025.
APA
Rudno-Rudziñski, W., Sek, G., Misiewicz, J., Lamas, T. E., & Quivy, A. A. (2007). The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, 101( 7), 0735018/1-073518/4. doi:10.1063/1.2714686
NLM
Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2714686
Vancouver
Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2714686
Artigo de periodico
Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells (2007)
Cunha, J F R; Silva, S W da; Morais, P C; Lamas, T. E.; Quivy, A. A.
Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CUNHA, J F R et al. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, v. 102, n. 4, p. 0437048/1-043704/6, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2769963. Acesso em: 08 nov. 2025.
APA
Cunha, J. F. R., Silva, S. W. da, Morais, P. C., Lamas, T. E., & Quivy, A. A. (2007). Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, 102( 4), 0437048/1-043704/6. doi:10.1063/1.2769963
NLM
Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2769963
Vancouver
Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2769963
Artigo de periodico
High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates (2005)
Lamas, T. E.; Quivy, A. A.; Sérgio, C. S.; Gusev, Guennadii Michailovich; Portal, J C
Source: Journal of Applied Physics. Unidade: IF
Assunto: POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LAMAS, T. E. et al. High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates. Journal of Applied Physics, v. 97, p. 076107, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1888041. Acesso em: 08 nov. 2025.
APA
Lamas, T. E., Quivy, A. A., Sérgio, C. S., Gusev, G. M., & Portal, J. C. (2005). High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates. Journal of Applied Physics, 97, 076107. doi:10.1063/1.1888041
NLM
Lamas TE, Quivy AA, Sérgio CS, Gusev GM, Portal JC. High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates [Internet]. Journal of Applied Physics. 2005 ; 97 076107.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1888041
Vancouver
Lamas TE, Quivy AA, Sérgio CS, Gusev GM, Portal JC. High mobility of a three-dimensional hole gas in parabolic quantum wells grown on GaAs(311)A substrates [Internet]. Journal of Applied Physics. 2005 ; 97 076107.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1888041

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