ReP USP - Resultado da busca

Filtros : "Journal of Applied Physics" "Chubaci, José Fernando Diniz" Limpar

Filtros

Artigo de periodico
Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects (2024)
Sandoval, Marcelo Alejandro Toloza ; Padilla, Jhon Elber Leon ; Wanderley, Adilson Barros ; Sipahi, Guilherme Matos ; Chubaci, José Fernando Diniz ; Silva, Antonio Ferreira da
Fonte: Journal of Applied Physics. Unidades: IFSC, IF
Assuntos: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 08 nov. 2025.
APA
Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962
NLM
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0187962
Vancouver
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0187962
Artigo de periodico
Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition (2000)
Matsuoka, Masao; Isotani, Sadao; Chubaci, José Fernando Diniz ; Miyake, S; Setsuhara, Y; Ogata, K; Kuratani, N
Fonte: Journal of Applied Physics. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MATSUOKA, Masao et al. Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition. Journal of Applied Physics, v. 88, n. 6, p. 3773-3775, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.1286108. Acesso em: 08 nov. 2025.
APA
Matsuoka, M., Isotani, S., Chubaci, J. F. D., Miyake, S., Setsuhara, Y., Ogata, K., & Kuratani, N. (2000). Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition. Journal of Applied Physics, 88( 6), 3773-3775. doi:10.1063/1.1286108
NLM
Matsuoka M, Isotani S, Chubaci JFD, Miyake S, Setsuhara Y, Ogata K, Kuratani N. Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition [Internet]. Journal of Applied Physics. 2000 ; 88( 6): 3773-3775.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1286108
Vancouver
Matsuoka M, Isotani S, Chubaci JFD, Miyake S, Setsuhara Y, Ogata K, Kuratani N. Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition [Internet]. Journal of Applied Physics. 2000 ; 88( 6): 3773-3775.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.1286108

Biblioteca Digital de Produção Intelectual da Universidade de São Paulo 2012 - 2025